Structural and Electrical Characterization of Undoped Poly-Si Oxides

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Sakamoto ◽  
H. Tokioka ◽  
S. Takanabe ◽  
T. Kubota ◽  
Y. Niwano ◽  
...  
Keyword(s):  
Leakage Current ◽  
Crystallization Temperature ◽  
Solid Phase ◽  
Oxide Films ◽  
Electrical Characterization ◽  
Oxide Interface ◽  
Solid Phase Crystallization ◽  
Oxide Layers ◽  
Si Films

ABSTRACTWe evaluated structural and electrical characteristics of undoped poly-Si oxide films. Poly-Si films made by solid phase crystallization at 600-900°C from undoped amorphous Si films were oxidized to form oxide layers of 140nm thickness. We observed protuberances on the surface of poly-Si layers after oxidation. Poly-Si oxide layers also generated protuberances above the protuberances of poly-Si films. The number of protuberances per unit area is larger in the case of high temperature crystallization. The measurement of current through the poly-Si oxide films shows that the conductivity of poly-Si oxide films depends on crystallization temperature of poly-Si films in the case of positive gate bias. When the gate is biased negatively, current through the poly-Si oxide films remained almost constant regardless of crystallization temperature. We find that poly-Si crystallized at lower temperatures offers poly-Si oxide films of lower leakage current in the case of electron injection from undoped poly-Si layers. The lower leakage current is due to highness of energy barrier for electron at undoped poly-Si/poly-Si oxide interface.

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

scholarly journals Индий-индуцированная кристаллизация тонких пленок аморфного субоксида кремния

2020 ◽  
Vol 46 (12) ◽  
pp. 14
Author(s):  
А.О. Замчий ◽  
Е.А. Баранов ◽  
И.Е. Меркулова ◽  
Н.А. Лунев ◽  
В.А. Володин ◽  
...  
Keyword(s):  
Crystallization Temperature ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
High Vacuum ◽  
Stoichiometric Coefficient ◽  
Free Standing ◽  
Solid Phase Crystallization ◽  
Silicon Suboxide ◽  
Induced Crystallization

A novel fabrication method of polycrystalline silicon by indium-induced crystallization (InIC) of amorphous silicon suboxide thin films with a stoichiometric coefficient of 0.5 (a-SiO0.5) is proposed. It was shown that the use of indium in the annealing process of a SiO0.5 allowed to decrease the crystallization temperature to 600°С which was significantly lower than the solid-phase crystallization temperature of the material - 850°С. As a result of the high-vacuum InIC of a-SiO0.5, the formation of free-standing micron-sized crystalline silicon particles took place.

TiO2 thin film crystallization temperature lowered by Cu-induced solid phase crystallization

2014 ◽  
Vol 553 ◽  
pp. 17-20 ◽  
Author(s):  
Chang Yang ◽  
Yasushi Hirose ◽  
Shoichiro Nakao ◽  
Tetsuya Hasegawa
Keyword(s):  
Thin Film ◽  
Crystallization Temperature ◽  
Tio2 Thin Film ◽  
Solid Phase ◽  
Solid Phase Crystallization

Solid-phase crystallization of high-quality Si films on SiO2 by local Ge-insertion

2004 ◽  
Vol 451-452 ◽  
pp. 489-492 ◽  
Author(s):  
I. Tsunoda ◽  
K. Nagatomo ◽  
A. Kenjo ◽  
T. Sadoh ◽  
M. Miyao
Keyword(s):  
Solid Phase ◽  
Solid Phase Crystallization ◽  
High Quality ◽  
Si Films

Polycrystalline Silicon Films Formed by Solid-Phase Crystallization of Amorphous Silicon: the Substrate Effects on Crystallization Kinetics and Mechanism

1996 ◽  
Vol 424 ◽  
Author(s):  
Y.-H. Song ◽  
S.-Y. Kang ◽  
K. I. Cho ◽  
H. J. Yoo ◽  
J. H. Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Solid Phase Crystallization ◽  
Substrate Effects ◽  
Random Nucleation ◽  
Pressure Chemical ◽  
Si Films ◽  
Polycrystalline Silicon Films ◽  
Induced Crystallization

AbstractThe substrate effects on the solid-phase crystallization of amorphous silicon (a-Si) have been extensively investigated. The a-Si films were prepared on two kinds of substrates, a thermally oxidized Si wafer (SiO2/Si) and a quartz, by low-pressure chemical vapor deposition (LPCVD) using Si2H6 gas at 470 °C and annealed at 600 °C in an N2 ambient for crystallization. The analysis using XRD and Raman scattering shows that crystalline nuclei are faster formed on the SiO2/Si than on the quartz, and the time needed for the complete crystallization of a-Si films on the SiO2/Si is greatly reduced to 8 h from ˜15 h on the quartz. In this study, it was first observed that crystallization in the a-Si deposited on the SiO2/Si starts from the interface between the a-Si film and the thermal oxide of the substrate, called interface-induced crystallization, while random nucleation process dominates on the quartz. The very smooth surface of the SiO2/Si substrate is responsible for the observed interface-induced crystallization of a-Si films.

Stress and Dopant Activation in Solid Phase Crystalized Si Films

1999 ◽  
Vol 558 ◽  
Author(s):  
A. Kaan Kalkan ◽  
Stephen J. Fonash
Keyword(s):  
Tensile Stress ◽  
Defect Density ◽  
Solid Phase ◽  
Structural Defects ◽  
Raman Shift ◽  
Solid Phase Crystallization ◽  
Dopant Activation ◽  
Defect Creation ◽  
Si Films ◽  
High Level

ABSTRACTDefect creation mechanisms during solid phase crystallization (SPC) of Si thin films were investigated with PECVD amorphous precursor samples produced with various deposition temperatures and thicknesses. These precursor films were implanted with dopant and then crystallized to obtain both SPC and dopant activation. The doping efficiency was found to decrease with the tensile stress level as measured by Raman shift. The stress shows a decrease as the precursor deposition temperature and thickness are lowered. Furthermore, a lower level of stress is induced by rapid thermal annealing when the annealing temperature is high enough to soften the glass substrate on which the films were deposited. We show that by control of stress during the SPC step, intragrain defect density can be lowered and electronic quality of the resulting polycrystalline Si films can be improved. Based on these observations, we propose the following tentative model to explain the defect creation: during SPC, tensile stress evolution is considered to result from the volumetric contraction of Si film when it transforms from the amorphous to crystalline phase. This contraction is retarded by the substrate, which imposes a tensile stress on the film. A high level of stress leads to formation of structural defects inside the grains of the resulting polycrystalline material. These defects trap carriers or complex with the dopant reducing doping efficiency.

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