Kinetics of residual stress evolution in evaporated silicon dioxide films exposed to room air

1996 ◽  
Vol 79 (9) ◽  
pp. 6926-6931 ◽  
Author(s):  
H. Leplan ◽  
J. Y. Robic ◽  
Y. Pauleau
Keyword(s):  
Residual Stress ◽  
Silicon Dioxide ◽  
Stress Evolution ◽  
Silicon Dioxide Films ◽  
Kinetics Of

Growth kinetics of ultrathin silicon dioxide films formed by oxidation in a N2O ambient

1996 ◽  
Vol 79 (3) ◽  
pp. 1464-1467 ◽  
Author(s):  
N. Koyama ◽  
T. Endoh ◽  
H. Fukuda ◽  
S. Nomura
Keyword(s):  
Silicon Dioxide ◽  
Growth Kinetics ◽  
Silicon Dioxide Films ◽  
Kinetics Of

Residual Stress Evolution during Fatigue Test of a Shoot Peened Steel Sample

2013 ◽  
Vol 752 ◽  
pp. 95-104 ◽  
Author(s):  
Dávid Cseh ◽  
Valéria Mertinger ◽  
János Lukács
Keyword(s):  
Residual Stress ◽  
Compressive Residual Stress ◽  
Steel Sample ◽  
Stress Evolution ◽  
Fatigue Load ◽  
Residual Stress Field ◽  
Solid Materials ◽  
Machine Element ◽  
Modification Technique ◽  
Kinetics Of

Directly-generated compressive residual stress has become a widely used surface modification technique. Intentional residual stress in solid materials can be produced by different surface compression methods. It is well known how residual stress field is influenced by the parameters of inducing technology, but during the operation of a surface compressed machine element the problem of compressive residual stress relaxation can occur. Only few articles address this phenomenon. The literature on residual stress decrease caused by fatigue load is scarce and the kinetics of this mechanism is not yet investigated. The present work reports on the examination of the effect of the fatigue load on compressive residual stress strengthened specimens. Investigations have been conducted at three stress levels. Residual stress data have been measured before fatigue load and measurements have been repeated after defined fatigue cycles.

Measurements and Modelling of Thin Silicon Dioxide Films on Silicon

1989 ◽  
Author(s):  
A. Kalnitsky ◽  
S. P. Tay ◽  
J. P. Ellul ◽  
J. W. Andrews ◽  
E. A. Irene ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Dioxide Films ◽  
Thin Silicon

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

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