[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD)
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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

2D Process Simulation With Accurate Dopant And Stress Profiles Calculations

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) ◽

10.1109/vpad.1993.724735 ◽

2005 ◽

Author(s):

D. Collard ◽

V. Senez ◽

B. Baccus

Keyword(s):

Process Simulation ◽

Stress Profiles

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Two-dimensional Simulation Of GaAs MESFETs Including Impact Ionization Of Carriers And Carrier Trapping In The Semi-insulating Substrate

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) ◽

10.1109/vpad.1993.724739 ◽

2005 ◽

Cited By ~ 4

Author(s):

K. Horio ◽

K. Satoh ◽

H. Kusuki

Keyword(s):

Impact Ionization ◽

Two Dimensional ◽

Carrier Trapping ◽

Dimensional Simulation

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Solid Modeling-based Parametric Operations For Device Design

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) ◽

10.1109/vpad.1993.724757 ◽

2005 ◽

Author(s):

W.T. Wong ◽

D.X. Yang ◽

R.W. Dutton ◽

J.D. Plummer

Keyword(s):

Solid Modeling ◽

Device Design

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MASTAR - A Model For Analog Simulation Of Subthreshold, Saturation And Weak Avalanche Regions In MOSFETs

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) ◽

10.1109/vpad.1993.724762 ◽

2005 ◽

Cited By ~ 2

Author(s):

T. Skotnicki ◽

G. Merckel ◽

C. Denat

Keyword(s):

Analog Simulation

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Dynamic-clustering And Grain-growth Kinetics Effects On Dopant Diffusion In Polysilicon

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) ◽

10.1109/vpad.1993.724719 ◽

2005 ◽

Author(s):

M. Hane ◽

S. Hasegawa

Keyword(s):

Grain Growth ◽

Growth Kinetics ◽

Dynamic Clustering ◽

Dopant Diffusion ◽

Grain Growth Kinetics

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Theoretical Analysis Of Transconductance Enhancement Due To Electron Concentration Dependent Screening In Heavily Doped Systems

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) ◽

10.1109/vpad.1993.724775 ◽

2005 ◽

Author(s):

Shirun Ho ◽

A. Moriyoshi ◽

I. Ohubu ◽

O. Kagaya ◽

H. Mizuta ◽

...

Keyword(s):

Theoretical Analysis ◽

Electron Concentration ◽

Heavily Doped

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Monte Carlo Analysis Of Hot Carrier Effects In Ultra Small Geometry MOSFETs

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) ◽

10.1109/vpad.1993.724740 ◽

2005 ◽

Author(s):

C. Fiegna ◽

H. Iwai ◽

T. Kimura ◽

S. Nakamura ◽

E. Sangiorgi ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Analysis ◽

Hot Carrier ◽

Hot Carrier Effects

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New Insights In Optimizing CMOS Inverter Circuits With Respect To Hot-carrier Degradation

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) ◽

10.1109/vpad.1993.724766 ◽

2005 ◽

Cited By ~ 2

Author(s):

P.M. Lee

Keyword(s):

Cmos Inverter ◽

Hot Carrier ◽

Hot Carrier Degradation

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Capacitance Calculation Of VLSI Multilevel Wiring Structures

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) ◽

10.1109/vpad.1993.724760 ◽

2005 ◽

Cited By ~ 5

Author(s):

R. Bauer ◽

M. Stiftinger ◽

S. Selberherr

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Multipole Accelerated 3-D Interconnect Analysis

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD) ◽

10.1109/vpad.1993.724728 ◽

2005 ◽

Author(s):

K. Nabors ◽

M. Karnon ◽

J. White

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[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

2D Process Simulation With Accurate Dopant And Stress Profiles Calculations

Two-dimensional Simulation Of GaAs MESFETs Including Impact Ionization Of Carriers And Carrier Trapping In The Semi-insulating Substrate

Solid Modeling-based Parametric Operations For Device Design

MASTAR - A Model For Analog Simulation Of Subthreshold, Saturation And Weak Avalanche Regions In MOSFETs

Dynamic-clustering And Grain-growth Kinetics Effects On Dopant Diffusion In Polysilicon

Theoretical Analysis Of Transconductance Enhancement Due To Electron Concentration Dependent Screening In Heavily Doped Systems

Monte Carlo Analysis Of Hot Carrier Effects In Ultra Small Geometry MOSFETs

New Insights In Optimizing CMOS Inverter Circuits With Respect To Hot-carrier Degradation

Capacitance Calculation Of VLSI Multilevel Wiring Structures

Multipole Accelerated 3-D Interconnect Analysis

[Proceedings] 1993 International Workshop on VLSI Process and Device Modeling (1993 VPAD)
Latest Publications