Ion energy, ion flux, and ion mass effects on low‐temperature silicon epitaxy using low‐energy ion bombardment process

1996 ◽  
Vol 79 (5) ◽  
pp. 2347-2351 ◽  
Author(s):  
Wataru Shindo ◽  
Tadahiro Ohmi
Keyword(s):  
Low Temperature ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Low Energy ◽  
Ion Energy ◽  
Mass Effects ◽  
Silicon Epitaxy

tudies on Titanium Nitride Coatings - Effect of Ion Bombardment

2000 ◽  
Vol 647 ◽  
Author(s):  
K. Deenamma Vargheese ◽  
G. Mohan Rao
Keyword(s):  
Titanium Nitride ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Morphological Changes ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Film Properties ◽  
Ion Energy ◽  
Ecr Plasma ◽  
Plasma Sputtering

AbstractIon bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low-Energy Ion Bombardment Process

1998 ◽  
Vol 37 (Part 1, No. 6A) ◽  
pp. 3268-3271
Author(s):  
Hajime Kumami ◽  
Wataru Shindo ◽  
Kazuhide Ino ◽  
Tadahiro Ohmi
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Phosphorus Concentration ◽  
Silicon Epitaxy

Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment

RSC Advances ◽  
2014 ◽  
Vol 4 (52) ◽  
pp. 27308-27314 ◽  
Author(s):  
Shibin Krishna TC ◽  
Govind Gupta
Keyword(s):  
Low Temperature ◽  
Schottky Diodes ◽  
Ion Bombardment ◽  
Band Alignment ◽  
Low Energy ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Gan Heterostructure

InN/GaN heterostructure based Schottky diodes are fabricated by low energetic nitrogen ions at 300 °C.

Silicon Homoepitaxy at Low Temperature Using Microwave Multipolar Plasma for Cleaning and Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
R. Burke ◽  
M. Guillermet ◽  
L. Vallier ◽  
E. Voisin
Keyword(s):  
Low Temperature ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Substrate Surface ◽  
Surface Damage ◽  
Low Energy ◽  
Temperature Plasma ◽  
Ion Energy ◽  
Ion Impact ◽  
Microwave Excitation

ABSTRACTThe Microwave Multipolar Plasma (MMP) offers unique features for plasma assisted deposition by combining multipolar magnetic confinement and microwave excitation. Independent control of the plasma-surface interaction parameters (neutral flux, ion flux and ion impact energy) has led to low temperature (400–800°C) silicon epitaxial growth in pure or H2 diluted silane MMPs.Prior to the epitaxial growth of Si, a plasma cleaning is applied to remove 0 and C atoms contaminant from the substrate surface. Ar and H2 were tested on 2 and 4 inch, (100) oriented, silicon wafers loaded “as received” and heated at the deposition temperature. The cleaning is effective in both cases giving a pure Si Auger spectrum. However, a LEED signature is only observed when operating at very low bias of the sample (low energy ions) and the lower the substrate temperature, the lower the energy allowed to obtain a LEED pattern. The cleaning process is also checked and inspected by post-deposition analyses, including TEM, RBS, SIMS and Secco etch.Various layer thicknesses were grown according to the characterization method. Specular epitaxial films are obtained for a large range of plasma and substrate parameters. The temperature may be as low as 400°C but the best results are obtained in the 600–700°C range. Interestingly, epitaxy is lost when the ion energy is increased. These results show a compromise between ion energy and substrate temperature. One needs to work at low ion energy to enhance the surface reaction while avoiding surface damage, but the temperature has to be sufficiently high to restructure the surface. Preliminary results on intentional doping reveal further potentialities of this low energy controlled interaction for low temperature plasma processing.

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