Silicon Homoepitaxy at Low Temperature Using Microwave Multipolar Plasma for Cleaning and Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
R. Burke ◽  
M. Guillermet ◽  
L. Vallier ◽  
E. Voisin
Keyword(s):  
Low Temperature ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Substrate Surface ◽  
Surface Damage ◽  
Low Energy ◽  
Temperature Plasma ◽  
Ion Energy ◽  
Ion Impact ◽  
Microwave Excitation

ABSTRACTThe Microwave Multipolar Plasma (MMP) offers unique features for plasma assisted deposition by combining multipolar magnetic confinement and microwave excitation. Independent control of the plasma-surface interaction parameters (neutral flux, ion flux and ion impact energy) has led to low temperature (400–800°C) silicon epitaxial growth in pure or H2 diluted silane MMPs.Prior to the epitaxial growth of Si, a plasma cleaning is applied to remove 0 and C atoms contaminant from the substrate surface. Ar and H2 were tested on 2 and 4 inch, (100) oriented, silicon wafers loaded “as received” and heated at the deposition temperature. The cleaning is effective in both cases giving a pure Si Auger spectrum. However, a LEED signature is only observed when operating at very low bias of the sample (low energy ions) and the lower the substrate temperature, the lower the energy allowed to obtain a LEED pattern. The cleaning process is also checked and inspected by post-deposition analyses, including TEM, RBS, SIMS and Secco etch.Various layer thicknesses were grown according to the characterization method. Specular epitaxial films are obtained for a large range of plasma and substrate parameters. The temperature may be as low as 400°C but the best results are obtained in the 600–700°C range. Interestingly, epitaxy is lost when the ion energy is increased. These results show a compromise between ion energy and substrate temperature. One needs to work at low ion energy to enhance the surface reaction while avoiding surface damage, but the temperature has to be sufficiently high to restructure the surface. Preliminary results on intentional doping reveal further potentialities of this low energy controlled interaction for low temperature plasma processing.

scholarly journals XPS STUDY OF SURFACE NITROGEN ON PET ACTED BY LOW TEMPERATURE PLASMA AND LOW ENERGY IONS

1988 ◽  
Vol 37 (3) ◽  
pp. 373
Author(s):  
WU NAI-JUAN ◽  
XIE KAN ◽  
HU JIAN-FANG ◽  
HONG MING-YUAN ◽  
LI HUI-NAN
Keyword(s):  
Low Temperature ◽  
Low Energy ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Xps Study ◽  
Low Energy Ions

scholarly journals Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Romain Cariou ◽  
Wanghua Chen ◽  
Jean-Luc Maurice ◽  
Jingwen Yu ◽  
Gilles Patriarche ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Low Temperature Plasma ◽  
New Paradigm ◽  
Temperature Plasma ◽  
Plasma Enhanced Cvd

Pd/Ni(111) surface structure by impact-collision ion scattering spectroscopy

2005 ◽  
Vol 908 ◽  
Author(s):  
Kenji Umezawa ◽  
Kaname Yamauchi ◽  
Shigemitsu Nakanishi ◽  
Walter M Gibson
Keyword(s):  
Substrate Temperature ◽  
Surface Structure ◽  
Epitaxial Growth ◽  
Low Energy ◽  
Surface Alloying ◽  
Ion Scattering ◽  
Low Energy Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Different Types

AbstractPd deposits on Ni(111) have been studied by low energy ion scattering spectroscopy. We found that two different types of epitaxial growth exist: Pd[11 2]//Ni[11 2] and Pd[11 2]//Ni[11 2] at substrate temperature of 300 K. The Pd(111) planes grow as mixed domains of 50 % each. Surface alloying of the Pd-Ni system was confirmed for deposition at 300 K in which Pd atoms displace first-layer Ni atoms, with an outward displacement of 0.4 Å with respect to first layer Ni atoms.

Ion Beam Processing of GaAs at Elevated Temperatures

1988 ◽  
Vol 144 ◽  
Author(s):  
J. S. Williams ◽  
R. G. Elliman ◽  
S. T. Johnson ◽  
D. K. Sengupta ◽  
J. M. Zemanski
Keyword(s):  
Elevated Temperature ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Elevated Temperatures ◽  
Ion Beam ◽  
Defect Production ◽  
Ion Energy ◽  
Residual Damage ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

ABSTRACTElevated temperature ion bombardment of GaAs has been examined to investigate the nature of residual damage and the interplay between bombardment-induced defect production and dynamic annealing. The nature of disorder is found to depend strongly on ion energy, species, dose, dose rate and substrate temperature. A temperature regime is identified in which dynamic annealing leads both to the efficient formation of band gap traps for carrier removal and to the low temperature crystallization of pre-existing amorphous layers.

Ultrathin Nitride Films Grown Under Low-Energy Ion Bombardment

1993 ◽  
Vol 316 ◽  
Author(s):  
Zhong-Min Ren ◽  
Zhi-Feng Ying ◽  
Xia-Xing Xiong ◽  
Mao-Qi He ◽  
Yuan-Cheng DU ◽  
...  
Keyword(s):  
Activation Energy ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Atomic Ratio ◽  
Low Energy ◽  
Ion Energy ◽  
Silicon Nitride Films ◽  
Thermal Nitridation

ABSTRACTBombardment of silicon surfaces by low-energy nitrogen ions has been investigated as a possible process for growing films of silicon nitride at relatively low temperature(<500°C). Broad ion beams of energy 300–1200eV have been used to grow ultrathin silicon nitride films. Film thickness and chemical states are analyzed using ellipsometery, X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy(AES). As a result, thicknesses dependence on ion energy, substrate temperature and implantation time have been investigated. The thicknesses of films obtained appear to increase with ion energy in the range from 300 to 1200eV, and with time of bombardment. The thicknesses are also observed to vary slightly with substrate temperature. The growth mechanism has also been investigated and discussed. The average activation energy of nitridation rates is about 3.5meV which indicates nonthermal process kinetics, compared to an activation energy of 0.2–0.6eV for thermal nitridation. AES results show that the atomic ratio [N]/[Si] is about 1.5, larger than that of pure Si3N4. All the analyses show that silicon nitride films of about 60Å thickness have been grown on silicon by low-energy ion beam nitridation.

Low Temperature Epitaxial Growth of High Temperature Superconductors:Bi-Sr-Ca-Cu-O.

1991 ◽  
Vol 222 ◽  
Author(s):  
Maki Kawai ◽  
Masami Mori ◽  
Shunji Watabe ◽  
Ziyuan Liu ◽  
Yasunori Tabira ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Epitaxial Growth ◽  
Lattice Constant ◽  
Molecular Beam ◽  
Oxidation Process ◽  
Elementary Unit

ABSTRACTMolecular beam epitaxy of ultra thin films of Bi2Sr2CuO8-(2201 phase) is realized on the surface of SrTiO3 (100) and LaAlO3 (100) at the substrate temperature of 573 K, using 10-5Pa of NO2 as an oxidant. The film epitaxially grown from the surface of the substrate has identical in-plane lattice constant to the substrate itself. Such a growth can only be obtained on the substrate with similar lattice constant to those of the material to be formed. The crystallinity of the film strongly depended on the sequence of the metal depositions and the oxidation process. In the case of the Bi system, the elementary unit of the epitaxial growth has proved to be the subunit of the perovskite structure (Sr-Cu-Sr). The structure of the film grown on a substrate with large mismatch (MgO) is also discussed.

Gas Phase Conditions for Obtaining Device Quality Amorphous Silicon at Low Temperature and High Deposition Rate

2009 ◽  
Vol 1153 ◽  
Author(s):  
Jatindra Kumar Rath ◽  
Minne de Jong ◽  
Arjan Verkerk ◽  
Monica Brinza ◽  
Ruud E.I. Schropp
Keyword(s):  
Low Temperature ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Gas Phase ◽  
Deposition Rate ◽  
Energy Flux ◽  
High Hydrogen ◽  
Ion Energy ◽  
Hydrogen Dilution

AbstractThe aim of this paper is to find a parameter space for deposition of amorphous silicon films at low substrate temperature by VHF PECVD process for application in solar cell fabrication on cheap plastics. Our studies show that at lower substrate temperature, keeping the pressure constant, the ion energy flux reaching the growth surface decreases, which we partly attribute to increasing gas phase collisions arising from an increase in gas density. The role of hydrogen is two fold: (1) higher hydrogen dilution increases the ion energy and restores it to its required value at low temperatures; (2) a normal to dusty plasma transition occurs at lower hydrogen to silane flow ratio and this transition regime shifts to higher dilution ratios for lower substrate temperatures. Thus the role of high hydrogen dilution at low temperature is to avoid the dusty regime. Thus the role of high hydrogen dilution at low temperature is to avoid the dusty regime. The ion energy flux at low substrate temperature can also be restored to the value obtained at high substrate temperature, without increasing hydrogen dilution, by simply lowering the chamber pressure or increasing the delivered plasma power, though the IEDFs in these cases differ substantially from the IEDF at high temperature conditions. We propose that a low pressure or high power in combination with a modest hydrogen dilution (high enough to avoid dusty regime) will deliver silicon films at low temperature without sacrificing deposition rate.

The influence of the deposition energy on thin film formation: Co on Si(111)

2003 ◽  
Vol 792 ◽  
Author(s):  
Koen Vanormelingen ◽  
Bart Degroote ◽  
André Vantomme
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Substrate Surface ◽  
Layer Growth ◽  
Low Energy ◽  
Layer By Layer ◽  
Ion Energy ◽  
Deposition Energy ◽  
Ion Deposition

ABSTRACTThe deposition of a thin film on a substrate surface can be achieved with a wide variety of techniques. Deposition using low energy ion beams is not a common technique, but it yields promising features, due to the hyperthermal nature of the deposited ions. With low energy ion deposition, it is possible to grow films with good characteristics at significantly lower temperatures compared to thermal deposition. The quality of these films critically depends on the energy of the impinging ions. We investigated the influence of the energy on the surface morphology for the deposition of Co onto Si(111). The roughness of this surface decreases significantly when the ion energy is increased, until it reaches a minimum at 25 eV. When the ion energy is further increased, the surface roughness increases again. This behavior can be explained by taking into account the interplay between the beneficial and detrimental effects due to the ion energy. Beneficial effects such as enhanced mobility and improved layer-by-layer growth cause a decrease in surface roughness when the deposition energy is increased from thermal to 25 eV. For energies above that value, undesirable effects such as defect creation and pileup dominate, leading to an increase in surface roughness. This study shows that low energy ion deposition can be used to improve the surface quality of a thin film by choosing the optimal deposition energy.

Monte Carlo Collision method for low temperature plasma simulation

2014 ◽  
Vol 81 (1) ◽  
Author(s):  
Francesco Taccogna
Keyword(s):  
Monte Carlo ◽  
Low Temperature ◽  
Energy Distribution ◽  
Energy Charge ◽  
Distribution Functions ◽  
Low Energy ◽  
Exit Plane ◽  
Low Temperature Plasma ◽  
Temperature Plasma ◽  
Electron Atom

This work shows the basic foundation of the particle-based representation of low temperature plasma description. In particular, the Monte Carlo Collision (MCC) recipe has been described for the case of electron-atom and ion-atom collisions. The model has been applied to the problem of plasma plume expansion from an electric Hall-effect type thruster. The presence of low energy secondary electrons from electron-atom ionization on the electron energy distribution function (EEDF) have been identified in the first 3 mm from the exit plane where, due to the azimuthal heating the ionization continues to play an important role. In addition, low energy charge-exchange ions from ion-atom electron transfer collisions are evident in the ion energy distribution functions (IEDF) 1 m from the exit plane.

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