Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment

RSC Advances ◽  
2014 ◽  
Vol 4 (52) ◽  
pp. 27308-27314 ◽  
Author(s):  
Shibin Krishna TC ◽  
Govind Gupta
Keyword(s):  
Low Temperature ◽  
Schottky Diodes ◽  
Ion Bombardment ◽  
Band Alignment ◽  
Low Energy ◽  
Nitrogen Ions ◽  
Nitrogen Ion ◽  
Gan Heterostructure

InN/GaN heterostructure based Schottky diodes are fabricated by low energetic nitrogen ions at 300 °C.

scholarly journals Characterization of nitrogen species incorporated into graphite using low energy nitrogen ion sputtering

2016 ◽  
Vol 18 (1) ◽  
pp. 458-465 ◽  
Author(s):  
Hisao Kiuchi ◽  
Takahiro Kondo ◽  
Masataka Sakurai ◽  
Donghui Guo ◽  
Junji Nakamura ◽  
...  
Keyword(s):  
Low Energy ◽  
Nitrogen Species ◽  
Ion Sputtering ◽  
Zigzag Edge ◽  
Nitrogen Doped ◽  
Doping Mechanism ◽  
Nitrogen Ions ◽  
Nitrogen Ion

The well-controlled nitrogen doped graphite with graphitic nitrogen located in the zigzag edge and/or vacancy sites can be realized using the low energy nitrogen sputtering. The doping mechanism of nitrogen ions is also discussed.

Ion Bombardment Effects on GaAs Using 100eV Nitrogen Ions

1988 ◽  
Vol 128 ◽  
Author(s):  
W. M. Lau
Keyword(s):  
Photoelectron Spectroscopy ◽  
Molecular Nitrogen ◽  
Polar Angle ◽  
Ion Bombardment ◽  
Molecular Ions ◽  
Near Surface ◽  
Nitrogen Ions ◽  
Gallium Nitrides ◽  
Nitrogen Ion ◽  
P Type

ABSTRACTThe ion bombardment effects of low energy molecular nitrogen ions (100eV) on GaAs have been investigated using in-situ polar angle dependent X-ray photoelectron spectroscopy. It was found that arsenic and gallium nitrides were formed as a result of the nitrogen ion bombardment. The ion bombardment also caused a depletion of arsenic in the near surface region. For example, with a dose of 6×1015 cm-2 of nitrogen molecular ions at 100eV, the surface structure can be described approximately as 1.5nm of Ga0.67A0.33N on GaAs. The ion bombardment moves the Fermi levels of both n-type and p-type GaAs to mid-gap. Heating the ion bombarded samples in a vacuum chamber to 500°C desorbs all arsenic nitrides but most of the gallium nitrides remain on the surface. The Fermi levels of both n-type and p-type are then stablized at about 0.4eV from the valence band maximum. A surface type-inversion of the n-type substrate is therefore induced by the nitrogen-ionbombardment/annealing treatment.

Study of the growth of thin nitride films under low-energy nitrogen-ion bombardment

1994 ◽  
Vol 58 (4) ◽  
pp. 395-399 ◽  
Author(s):  
Zhong-Min Ren ◽  
Zhi-Feng Ying ◽  
Xia-Xing Xiong ◽  
Mao-Qi He ◽  
Fu-Ming Li ◽  
...  
Keyword(s):  
Ion Bombardment ◽  
Low Energy ◽  
Nitrogen Ion

Near-edge X-ray absorption fine-structure studies of GaN under low-energy nitrogen ion bombardment

2006 ◽  
Vol 252 (10) ◽  
pp. 3413-3416 ◽  
Author(s):  
V.A. Coleman ◽  
M. Petravić ◽  
K.-J. Kim ◽  
B. Kim ◽  
G. Li
Keyword(s):  
Fine Structure ◽  
Ion Bombardment ◽  
Low Energy ◽  
X Ray ◽  
Absorption Fine ◽  
Nitrogen Ion ◽  
X Ray Absorption

GaNxAs1-x Growth by Molecular Beam Epitaxy with Dispersive Nitrogen

2001 ◽  
Vol 693 ◽  
Author(s):  
S.Z. Wang ◽  
S.F. Yoon ◽  
T.K. Ng ◽  
W.K. Loke ◽  
W.J. Fan
Keyword(s):  
Optical Property ◽  
Molecular Beam Epitaxy ◽  
Deleterious Effect ◽  
Molecular Beam ◽  
Ion Bombardment ◽  
High Quality ◽  
Growth Technique ◽  
Material Quality ◽  
Nitrogen Ions ◽  
Nitrogen Ion

AbstractThe effect of energetic nitrogen ion bombardment during growth may have a deleterious effect on the material quality. To avoid the bombardment effect of energetic nitrogen ions, a modified mode for GaAsN growth using dispersive nitrogen is reported. High quality GaAsN epilayers and good GaAsN/GaAs interface were achieved using this growth mode. The results suggest that the surface of samples grown using dispersive nitrogen has fewer defects than those grown using direct nitrogen beam. The optical property of GaAsN samples grown using the dispersive nitrogen technique was found to improve, due to the lower ion bombardment effect. This growth technique is expected to be advantageous for growing high quality GaAsN materials for optoelectronic applications.

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