A model for oxygen precipitation in silicon including bulk stacking fault growth

1995 ◽  
Vol 78 (11) ◽  
pp. 6469-6476 ◽  
Author(s):  
S. Senkader ◽  
J. Esfandyari ◽  
G. Hobler
Keyword(s):  
Stacking Fault ◽  
Oxygen Precipitation ◽  
Fault Growth

Modelinig of Dopant Diffusion and Associated Effects in Silicon

1982 ◽  
Vol 14 ◽  
Author(s):  
Richard B. Fair
Keyword(s):  
Point Defects ◽  
Stacking Fault ◽  
Relative Importance ◽  
Dopant Diffusion ◽  
Oxygen Precipitation ◽  
Fault Growth

ABSTRACTResearch in the area of dopant diffusion in Si has focused on identifying the specific mechanisms and point defects involved. Recent approaches include observing the effects of diffusion and doping on oxygen precipitation, stacking fault growth or shrinkage, enhanced/retarded diffusion of one dopant in the presence of another. Very few of these studies have yielded unambiguous interpretations as a result of the indirect nature of the experiments. However, taken together we can infer the relative importance of vacancies versus Si selfinterstitials in the diffusion of each dopant species.

Mechanisms of Stacking Fault Growth in SiC PiN Diodes

2004 ◽  
Vol 815 ◽  
Author(s):  
R. E. Stahlbush ◽  
M. E. Twigg ◽  
J. J. Sumakeris ◽  
K. G. Irvine ◽  
P. A. Losee
Keyword(s):  
Basal Plane ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Drift Region ◽  
Pin Diodes ◽  
Current Time ◽  
Partial Dislocations ◽  
Initial Evolution ◽  
A Chain ◽  
Fault Growth

AbstractThe early development of stacking faults in SiC PiN diodes fabricated on 8° off c-axis 4H wafers has been studied. The 150μm drift region and p-n junction were epitaxially grown. The initial evolution of the stacking faults was examined by low injection electroluminescence using current-time product steps as low as 0.05 coul/cm2. The properties of the dislocations present before electrical stressing were determined based on previously observed differences of Si-core and C-core partial dislocations and the patterns of stacking fault expansion. The initial stacking fault expansion often forms a chain of equilateral triangles and at higher currents and/or longer times these triangles coalesce. All of the faulting examined in this paper originated between 10 and 40 μm below the SiC surface. The expansion rate of the bounding partial dislocations is very sensitive to the partials' line directions, their core types and the density of kinks. From these patterns it is concluded that the stacking faults originate from edge-like basal plane dislocations that have Burgers vectors either parallel or anti-parallel to the off-cut direction. Evidence for dislocation conversions between basal-plane and threading throughout the epitaxial drift region is also presented.

Kinetics of stacking fault growth

1963 ◽  
Vol 11 (12) ◽  
pp. 1367-1368 ◽  
Author(s):  
J.S. Hirschhoen
Keyword(s):  
Stacking Fault ◽  
Fault Growth ◽  
Kinetics Of

Defect Control in Cz Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
F. G. Kirscht ◽  
S. B. Kim ◽  
J. J. Yeh ◽  
P. D. Wildes
Keyword(s):  
Defect Formation ◽  
Stacking Fault ◽  
Defect Structures ◽  
Oxygen Precipitation ◽  
Defect Control ◽  
Proper Design ◽  
Related Defect

ABSTRACTGeneric and interaction aspects of oxygen precipitation, related defect formation and denudation in Cz-Si wafers are presented. Bulk defect profiles and homogenization control are shown to be achievable by proper design of post-growth annealing.Gettering-related phenomena are discussed including stacking fault-rich bulk defect structures and peculiarities in different epitaxy systems.

scholarly journals THE STACKING FAULT GROWTH MECHANISM AND ITS KINETICS

1988 ◽  
Vol 37 (5) ◽  
pp. 789
Author(s):  
MIN NAI-BEN ◽  
I. SUNAGAWA ◽  
K. TSUKAMOTO
Keyword(s):  
Growth Mechanism ◽  
Stacking Fault ◽  
Fault Growth
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