Kinetics of silicon stacking fault growth/shrinkage in an oxidizing ambient containing a chlorine compound

1982 ◽  
Vol 53 (7) ◽  
pp. 4767-4778 ◽  
Author(s):  
T. Y. Tan ◽  
U. Gösele
1963 ◽  
Vol 11 (12) ◽  
pp. 1367-1368 ◽  
Author(s):  
J.S. Hirschhoen

2002 ◽  
Vol 81 (17) ◽  
pp. 3167-3169 ◽  
Author(s):  
D. Luebbert ◽  
J. Arthur ◽  
M. Sztucki ◽  
T. H. Metzger ◽  
P. B. Griffin ◽  
...  

2004 ◽  
Vol 815 ◽  
Author(s):  
R. E. Stahlbush ◽  
M. E. Twigg ◽  
J. J. Sumakeris ◽  
K. G. Irvine ◽  
P. A. Losee

AbstractThe early development of stacking faults in SiC PiN diodes fabricated on 8° off c-axis 4H wafers has been studied. The 150μm drift region and p-n junction were epitaxially grown. The initial evolution of the stacking faults was examined by low injection electroluminescence using current-time product steps as low as 0.05 coul/cm2. The properties of the dislocations present before electrical stressing were determined based on previously observed differences of Si-core and C-core partial dislocations and the patterns of stacking fault expansion. The initial stacking fault expansion often forms a chain of equilateral triangles and at higher currents and/or longer times these triangles coalesce. All of the faulting examined in this paper originated between 10 and 40 μm below the SiC surface. The expansion rate of the bounding partial dislocations is very sensitive to the partials' line directions, their core types and the density of kinks. From these patterns it is concluded that the stacking faults originate from edge-like basal plane dislocations that have Burgers vectors either parallel or anti-parallel to the off-cut direction. Evidence for dislocation conversions between basal-plane and threading throughout the epitaxial drift region is also presented.


1995 ◽  
Vol 78 (11) ◽  
pp. 6469-6476 ◽  
Author(s):  
S. Senkader ◽  
J. Esfandyari ◽  
G. Hobler

2013 ◽  
Vol 592-593 ◽  
pp. 489-492
Author(s):  
Anja Weidner ◽  
Alexei Vinogradov ◽  
Alexei Lazarev ◽  
Horst Biermann

High-alloy cast CrMnNi steels exhibit depending on the chemical composition either transformation induced plasticity (TRIP-effect) or twinning induced plasticity (TWIP effect). Whereas the TRIP effect is caused by a martensitic phase transformation from the f.c.c austenitic phase into the b.c.c α-martensite phase via the formation of deformation bands with high stacking fault density the so-called ε-martensite, the TWIP effect is the result of mechanical twinning during plastic deformation. The occurrence of both effects as well as the underlying microstructural processes are strongly affected by the austenite stability, the stacking fault energy and/or the test temperature. However, the onset stress and the kinetics of these deformation processes are still unknown. The in-situ measurement of acoustic emission signals during the plastic deformation of materials is a powerful tool for the investigation of such dynamic microstructural processes and their kinetics. In the present study acoustic emission measurements were performed during tensile deformation at room temperature on a high-alloy cast TWIP steel. The AE investigations were completed by SEM investigations on the deformed specimens. The statistical and cluster analysis of acoustic emission signals reveals different patterns of acoustic emission signals, which are correlated with underlying microstructural processes.


2000 ◽  
Vol 62 (4) ◽  
pp. 2546-2551 ◽  
Author(s):  
K. Shimada ◽  
T. Ishimaru ◽  
T. Watanabe ◽  
T. Yamawaki ◽  
M. Osuka ◽  
...  

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