Defect Control in Cz Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
F. G. Kirscht ◽  
S. B. Kim ◽  
J. J. Yeh ◽  
P. D. Wildes
Keyword(s):  
Defect Formation ◽  
Stacking Fault ◽  
Defect Structures ◽  
Oxygen Precipitation ◽  
Defect Control ◽  
Proper Design ◽  
Related Defect

ABSTRACTGeneric and interaction aspects of oxygen precipitation, related defect formation and denudation in Cz-Si wafers are presented. Bulk defect profiles and homogenization control are shown to be achievable by proper design of post-growth annealing.Gettering-related phenomena are discussed including stacking fault-rich bulk defect structures and peculiarities in different epitaxy systems.

Flux-pinning-related defect structures in melt-processed YBa2Cu3O7-x

1993 ◽  
Vol 51 ◽  
pp. 936-937
Author(s):  
Z. L. Wang ◽  
R. Kontra ◽  
A. Goyal ◽  
D. M. Kroeger ◽  
L.F. Allard
Keyword(s):  
Volume Fraction ◽  
Local Density ◽  
Stacking Faults ◽  
Image Resolution ◽  
Defect Structures ◽  
Atomic Structures ◽  
Transmission Electron ◽  
Point Image ◽  
Related Defect ◽  
Point To Point

Previous studies of Y2BaCuO5/YBa2Cu3O7-δ(Y211/Y123) interfaces in melt-processed and quench-melt-growth processed YBa2Cu3O7-δ using high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) have revealed a high local density of stacking faults in Y123, near the Y211/Y123 interfaces. Calculations made using simple energy considerations suggested that these stacking faults may act as effective flux-pinners and may explain the observations of increased Jc with increasing volume fraction of Y211. The present paper is intended to determine the atomic structures of the observed defects. HRTEM imaging was performed using a Philips CM30 (300 kV) TEM with a point-to-point image resolution of 2.3 Å. Nano-probe EDS analysis was performed using a Philips EM400 TEM/STEM (100 kV) equipped with a field emission gun (FEG), which generated an electron probe of less than 20 Å in diameter.Stacking faults produced by excess single Cu-O layers: Figure 1 shows a HRTEM image of a Y123 film viewed along [100] (or [010]).

A New-Type of Defect Generation at a 4H-SiC/SiO2 Interface by Oxidation Induced Compressive Strain

2013 ◽  
Vol 740-742 ◽  
pp. 469-472 ◽  
Author(s):  
Kenta Chokawa ◽  
Shigenori Kato ◽  
Katsumasa Kamaiya ◽  
Kenji Shiraishi
Keyword(s):  
Defect Structure ◽  
Density Functional ◽  
Oxidation Process ◽  
Present Report ◽  
Compressive Strain ◽  
Defect Structures ◽  
Forming Process ◽  
Functional Theory ◽  
New Type ◽  
Related Defect

Our message is oxidation process must be minimized as possible. Many carbon-related defect structures are reported in SiC/SiO2 interface. In this paper, we investigated the effect of oxidation to the defect forming by density functional theory (DFT). In the result, we found carbon defect structure that completely different from in the present report. This defect structure has carbon-carbon single bond with no dangling bond. To see the forming process, compressive strain from inserted oxygen atoms induce the rearrangement of structure and cause C-C defect structure. We can know that this structure is formed with energy gain about 3.8eV. And this C-C defect induces trap state under the conduction bottoms.

scholarly journals Analysis of Transferred MoS2 Layers Grown by MOCVD: Evidence of Mo Vacancy Related Defect Formation

2020 ◽  
Vol 9 (9) ◽  
pp. 093001 ◽  
Author(s):  
B. Schoenaers ◽  
A. Leonhardt ◽  
A. N. Mehta ◽  
A. Stesmans ◽  
D. Chiappe ◽  
...  
Keyword(s):  
Defect Formation ◽  
Related Defect

A model for oxygen precipitation in silicon including bulk stacking fault growth

1995 ◽  
Vol 78 (11) ◽  
pp. 6469-6476 ◽  
Author(s):  
S. Senkader ◽  
J. Esfandyari ◽  
G. Hobler
Keyword(s):  
Stacking Fault ◽  
Oxygen Precipitation ◽  
Fault Growth

The Engineering of Silicon Wafer Material Properties Through Vacancy Concentration Profile Control and the Achievement of Ideal Oxygen Precipitation Behavior

1998 ◽  
Vol 510 ◽  
Author(s):  
R. Falster ◽  
D. Gambaro ◽  
M. Olmo ◽  
M. Cornara ◽  
H. Korb
Keyword(s):  
Silicon Wafer ◽  
Integrated Circuit ◽  
Defect Formation ◽  
Electronic Device ◽  
Vacancy Concentration ◽  
Silicon Wafers ◽  
Precipitation Behavior ◽  
Oxygen Precipitation ◽  
Profile Control ◽  
Zone Depth

AbstractA new kind of silicon wafer and a new class of materials engineering techniques for silicon wafers is described. This wafer, called the “Magic Denuded Zone” or MDZ wafer, is produced through the manipulation of the vacancy concentration and, in particular, vacancy concentration depth profiles in the wafer prior to the development of oxygen precipitates in subsequent heat treatments. The result is a wafer with ideal oxygen precipitation behavior for use in all types of integrated circuit applications. The methods used to prepare such wafers combine Frenkel pair generation with injection and the use of surface sinks. Simulations of the vacancy profiles produced by these techniques are presented and discussed. It is shown that within the range of vacancy concentration accessible by these techniques (up to ca. 1013 cm−3) the rate and oxygen concentration dependence of oxygen clustering can be substantially modified. Such techniques can be used to precisely engineer unique and desirable oxygen-related defect performance in silicon wafers both in terms of distribution and rate of defect formation. One result of the application of such techniques is an ideally precipitating silicon wafer in which the resulting oxygen precipitate profile (denuded zone depth and bulk density of precipitates) is independent of the concentration of oxygen of the wafer, the details of the crystal growth process used to prepare the wafer and, to a very large extent, the details of thermal cycles used to process the wafer into an electronic device. Optimal, generic and reliable internal gettering performance is achieved in such a wafer

scholarly journals Electron paramagnetic resonance in the research of defect formation and thermal processes during grinding of ZnO powders

2004 ◽  
Vol 36 (2) ◽  
pp. 65-72 ◽  
Author(s):  
M. Kakazey ◽  
M. Vlasova ◽  
M. Dominguez-Patiño ◽  
G. Dominguez-Patiño ◽  
T. Sreckovic ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Mechanical Treatment ◽  
Defect Formation ◽  
Thermal Processes ◽  
Defect Structures ◽  
Paramagnetic Centers ◽  
Paramagnetic Resonance ◽  
Zno Powders ◽  
Electron Paramagnetic

This work shows some possibilities for using electron paramagnetic resonance in an experimental study of the role of mechanothermal effects in the formation of defect structures in dispersed systems during prolonged mechanical treatment of ZnO powders. The use of EPR for this purpose is based on the known fact that initiation of a number of paramagnetic centers occurs during mechanical treatment of some materials. Such centers can serve as EPR-sondes of different thermal processes appearing during mechanical treatment of systems containing ZnO.

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