scholarly journals THE STACKING FAULT GROWTH MECHANISM AND ITS KINETICS

1988 ◽  
Vol 37 (5) ◽  
pp. 789
Author(s):  
MIN NAI-BEN ◽  
I. SUNAGAWA ◽  
K. TSUKAMOTO
Keyword(s):  
Growth Mechanism ◽  
Stacking Fault ◽  
Fault Growth

Relationship between fault growth mechanism and permeability variations with depth of siliceous mudstones in northern Hokkaido, Japan

2010 ◽  
Vol 32 (11) ◽  
pp. 1792-1805 ◽  
Author(s):  
Eiichi Ishii ◽  
Hironori Funaki ◽  
Tetsuya Tokiwa ◽  
Kunio Ota
Keyword(s):  
Growth Mechanism ◽  
Fault Growth

Mechanisms of Stacking Fault Growth in SiC PiN Diodes

2004 ◽  
Vol 815 ◽  
Author(s):  
R. E. Stahlbush ◽  
M. E. Twigg ◽  
J. J. Sumakeris ◽  
K. G. Irvine ◽  
P. A. Losee
Keyword(s):  
Basal Plane ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Drift Region ◽  
Pin Diodes ◽  
Current Time ◽  
Partial Dislocations ◽  
Initial Evolution ◽  
A Chain ◽  
Fault Growth

AbstractThe early development of stacking faults in SiC PiN diodes fabricated on 8° off c-axis 4H wafers has been studied. The 150μm drift region and p-n junction were epitaxially grown. The initial evolution of the stacking faults was examined by low injection electroluminescence using current-time product steps as low as 0.05 coul/cm2. The properties of the dislocations present before electrical stressing were determined based on previously observed differences of Si-core and C-core partial dislocations and the patterns of stacking fault expansion. The initial stacking fault expansion often forms a chain of equilateral triangles and at higher currents and/or longer times these triangles coalesce. All of the faulting examined in this paper originated between 10 and 40 μm below the SiC surface. The expansion rate of the bounding partial dislocations is very sensitive to the partials' line directions, their core types and the density of kinks. From these patterns it is concluded that the stacking faults originate from edge-like basal plane dislocations that have Burgers vectors either parallel or anti-parallel to the off-cut direction. Evidence for dislocation conversions between basal-plane and threading throughout the epitaxial drift region is also presented.

A model for oxygen precipitation in silicon including bulk stacking fault growth

1995 ◽  
Vol 78 (11) ◽  
pp. 6469-6476 ◽  
Author(s):  
S. Senkader ◽  
J. Esfandyari ◽  
G. Hobler
Keyword(s):  
Stacking Fault ◽  
Oxygen Precipitation ◽  
Fault Growth

Gold nanowire growth through stacking fault mechanism by oleylamine-mediated synthesis

Nanoscale ◽  
2020 ◽  
Vol 12 (25) ◽  
pp. 13316-13329 ◽  
Author(s):  
Daniel A. Moraes ◽  
João B. Souza Junior ◽  
Fabio F. Ferreira ◽  
Naga Vishnu V. Mogili ◽  
Laudemir C. Varanda
Keyword(s):  
Growth Mechanism ◽  
Defect Formation ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Nanowire Growth ◽  
Gold Nanowires ◽  
Gold Nanowire ◽  
Fault Mechanism ◽  
Stable Stacking Faults

We assigned the growth mechanism of anisotropic tadpole-like gold nanowires to the stable stacking faults and twinned defect formation, with Au-monomer incorporation onto the faulted-faces, resulting in a tail with a mixture of fcc/hcp phases.

Kinetics of stacking fault growth

1963 ◽  
Vol 11 (12) ◽  
pp. 1367-1368 ◽  
Author(s):  
J.S. Hirschhoen
Keyword(s):  
Stacking Fault ◽  
Fault Growth ◽  
Kinetics Of
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