Modelinig of Dopant Diffusion and Associated Effects in Silicon

1982 ◽  
Vol 14 ◽  
Author(s):  
Richard B. Fair
Keyword(s):  
Point Defects ◽  
Stacking Fault ◽  
Relative Importance ◽  
Dopant Diffusion ◽  
Oxygen Precipitation ◽  
Fault Growth

ABSTRACTResearch in the area of dopant diffusion in Si has focused on identifying the specific mechanisms and point defects involved. Recent approaches include observing the effects of diffusion and doping on oxygen precipitation, stacking fault growth or shrinkage, enhanced/retarded diffusion of one dopant in the presence of another. Very few of these studies have yielded unambiguous interpretations as a result of the indirect nature of the experiments. However, taken together we can infer the relative importance of vacancies versus Si selfinterstitials in the diffusion of each dopant species.

A model for oxygen precipitation in silicon including bulk stacking fault growth

1995 ◽  
Vol 78 (11) ◽  
pp. 6469-6476 ◽  
Author(s):  
S. Senkader ◽  
J. Esfandyari ◽  
G. Hobler
Keyword(s):  
Stacking Fault ◽  
Oxygen Precipitation ◽  
Fault Growth

Contrast From Point Defects in The Infinitesimal Approximation

1980 ◽  
Vol 38 ◽  
pp. 350-351
Author(s):  
L. J. Sykes ◽  
J. J. Hren
Keyword(s):  
Electron Microscope ◽  
Point Defects ◽  
Broad Class ◽  
Stacking Fault ◽  
Crystalline Solids ◽  
Dislocation Loops ◽  
Analytical Expression ◽  
Stacking Fault Tetrahedra

In electron microscope studies of crystalline solids there is a broad class of very small objects which are imaged primarily by strain contrast. Typical examples include: dislocation loops, precipitates, stacking fault tetrahedra and voids. Such objects are very difficult to identify and measure because of the sensitivity of their image to a host of variables and a similarity in their images. A number of attempts have been made to publish contrast rules to help the microscopist sort out certain subclasses of such defects. For example, Ashby and Brown (1963) described semi-quantitative rules to understand small precipitates. Eyre et al. (1979) published a catalog of images for BCC dislocation loops. Katerbau (1976) described an analytical expression to help understand contrast from small defects. There are other publications as well.

ON THE ROLE OF STACKING FAULTS IN SOME PROBLEMS OF GLIDE AND TWINNING IN CUBIC METALS

1967 ◽  
Vol 45 (2) ◽  
pp. 481-492 ◽  
Author(s):  
B. Escaig ◽  
G. Fontaine ◽  
J. Friedel
Keyword(s):  
Point Defects ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Dislocation Network ◽  
Thermal Variation ◽  
Temperature Dependent ◽  
Cubic Metals ◽  
Thermally Activated ◽  
Stacking Fault Energies

The possible role of stacking faults is discussed in some problems of glide and twinning of cubic metals, especially at low temperatures.The first part analyzes a model for the thermal variation of macroyield in b.c.c. metals. If one assumes that the dislocations of such metals split along either the (110) or the (112) planes, the screw dislocations will be sessile. The strong temperature variation of macroyield could be due to the thermally activated slip of such screws, previously developed at lower stresses during the less temperature-dependent microyield. Reasonably high stacking-fault energies are required for satisfactory numerical fits.The second part studies the influence of a dense dislocation network on the propagation of a stacking fault. The friction force acting on the partial that propagates the fault must be taken into account when deducing a stacking-fault energy from the stress at which stacking faults develop in a strongly work-hardened (f.c.c.) metal. The trails of dipoles left at each tree crossed should prevent any creation of point defects; they should lead, after the faults have propagated some length, to its multiplication into a twin or martensitic lamella. The analogies with problems of slip bauds and dipole formation in easy glide are stressed.

Mechanisms of Stacking Fault Growth in SiC PiN Diodes

2004 ◽  
Vol 815 ◽  
Author(s):  
R. E. Stahlbush ◽  
M. E. Twigg ◽  
J. J. Sumakeris ◽  
K. G. Irvine ◽  
P. A. Losee
Keyword(s):  
Basal Plane ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Drift Region ◽  
Pin Diodes ◽  
Current Time ◽  
Partial Dislocations ◽  
Initial Evolution ◽  
A Chain ◽  
Fault Growth

AbstractThe early development of stacking faults in SiC PiN diodes fabricated on 8° off c-axis 4H wafers has been studied. The 150μm drift region and p-n junction were epitaxially grown. The initial evolution of the stacking faults was examined by low injection electroluminescence using current-time product steps as low as 0.05 coul/cm2. The properties of the dislocations present before electrical stressing were determined based on previously observed differences of Si-core and C-core partial dislocations and the patterns of stacking fault expansion. The initial stacking fault expansion often forms a chain of equilateral triangles and at higher currents and/or longer times these triangles coalesce. All of the faulting examined in this paper originated between 10 and 40 μm below the SiC surface. The expansion rate of the bounding partial dislocations is very sensitive to the partials' line directions, their core types and the density of kinks. From these patterns it is concluded that the stacking faults originate from edge-like basal plane dislocations that have Burgers vectors either parallel or anti-parallel to the off-cut direction. Evidence for dislocation conversions between basal-plane and threading throughout the epitaxial drift region is also presented.

Effect of Fluorine on the Dopant Diffusion of Through-Oxtoe Implanted Boron in Si - a Correlation with Microstructural Defects

1992 ◽  
Vol 262 ◽  
Author(s):  
J. G. Huang ◽  
A. Lam ◽  
R. J. Jaccodine
Keyword(s):  
Strain Gradient ◽  
Dopant Diffusion ◽  
Boron Diffusion ◽  
Spreading Resistance ◽  
Oxygen Precipitation ◽  
Microstructural Defects ◽  
Oxygen Atoms

ABSTRACTIn case of boron through-oxide implant, it has been shown that the knocked-in oxygen atoms segregate at initially nucleated dislocation sites during the incubation and no significant junction movement is detected. The trapping of oxygen proceeds up to a certain time at which oxygen-precipitation occurs and this leads to an ejection of excess Si interstitials and further enhancing boron diffusion. However, with fluorine addition we believe that fluorine incorporation in SiO2 and/or SiO2/Si interface not only releases the strain gradient but also suppresses the silicon interstitials ejection and by this means suppresses the oxidation-enhanced boron diffusion. Correlated results of TEM microdefect structures and spreading resistance profiles are used to further support our postulation.

Behavior Of Point Defects In CZ Silicon Crystal Growth-Formation Of Polyhedral Cavities And Oxidation-Induced Stacking Fault Nuclei

1996 ◽  
Vol 442 ◽  
Author(s):  
K Tanahashi ◽  
N. Inoue ◽  
Y. Mizokawa
Keyword(s):  
Crystal Growth ◽  
Ternary System ◽  
Point Defects ◽  
Silicon Crystal ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Czochralski Silicon ◽  
Growth Formation

AbstractThe origin of oxidation–induced stacking faults (OSF) and polyhedral cavities in as–grown Czochralski silicon (CZ–Si) crystals is discussed with comparison to the behavior of previously investigated grown–in oxide precipitates. The incorporation, diffusion and reaction in the vacancy, self–interstitial and oxygen ternary system are considered to discuss the origin of grown–in defects.

Influence of Neutron Irradiation on Stress - Induced Oxygen Precipitation in Cz-Si

2005 ◽  
Vol 108-109 ◽  
pp. 169-174 ◽  
Author(s):  
Jadwiga Bak-Misiuk ◽  
Andrzej Misiuk ◽  
Barbara Surma ◽  
Artem Shalimov ◽  
Charalamos A. Londos
Keyword(s):  
Oxygen Concentration ◽  
Neutron Irradiation ◽  
Point Defects ◽  
Interstitial Oxygen ◽  
Pressure Treatment ◽  
X Ray ◽  
Effect Of Pressure ◽  
Oxygen Precipitation ◽  
Ray Methods ◽  
High Hydrostatic Pressures

Oxygen precipitation and creation of defects in Czochralski grown silicon with interstitial oxygen concentration 9.4·1017 cm-3, subjected to irradiation with neutrons (5 MeV, dose 1x1017 cm-2) and subsequently treated for 5 h under atmospheric and high hydrostatic pressures (HP, up to 1.1 GPa) at 1270 / 1400 K, were investigated by spectroscopic and X - Ray methods. Point defects created by neutron irradiation stimulate oxygen precipitation and creation of dislocations under HP, especially at 1270 K. The effect of pressure treatment is related to changed concentration and mobility of silicon interstitials and vacancies as well as of the VnOm – type defects.

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