Improvement of the SiO2/Si interface of metal‐oxide‐semiconductor devices using gate dielectrics formed by NF3‐aided oxidation and N2O post‐annealing

1994 ◽  
Vol 75 (5) ◽  
pp. 2564-2571 ◽  
Author(s):  
Jenn Gwo Huang ◽  
Ralph J. Jaccodine ◽  
Donald R. Young
Keyword(s):  
Metal Oxide ◽  
Gate Dielectrics ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Post Annealing

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

2008 ◽  
Vol 103 (1) ◽  
pp. 014506 ◽  
Author(s):  
G. Mavrou ◽  
S. Galata ◽  
P. Tsipas ◽  
A. Sotiropoulos ◽  
Y. Panayiotatos ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Gate Dielectrics ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

scholarly journals Lu2O3∕Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

2008 ◽  
Vol 93 (6) ◽  
pp. 062901 ◽  
Author(s):  
P. Darmawan ◽  
M. Y. Chan ◽  
T. Zhang ◽  
Y. Setiawan ◽  
H. L. Seng ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectrics ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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