Radiation hardened metal‐oxide‐semiconductor devices with gate dielectrics grown by rapid thermal processing in O2with diluted NF3

1991 ◽  
Vol 58 (4) ◽  
pp. 425-427 ◽  
Author(s):  
J. Ahn ◽  
G. Q. Lo ◽  
W. Ting ◽  
D. L. Kwong ◽  
John Kuehne ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Thermal Processing ◽  
Gate Dielectrics ◽  
Semiconductor Devices ◽  
Rapid Thermal Processing ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Radiation Hardened

The effect of thermal processing on polycrystalline silicon/SiO2/6H–SiC metal‐oxide‐semiconductor devices

1996 ◽  
Vol 68 (16) ◽  
pp. 2231-2233 ◽  
Author(s):  
W. Xie ◽  
J. N. Shenoy ◽  
S. T. Sheppard ◽  
M. R. Melloch ◽  
J. A. Cooper
Keyword(s):  
Metal Oxide ◽  
Thermal Processing ◽  
Polycrystalline Silicon ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

2008 ◽  
Vol 103 (1) ◽  
pp. 014506 ◽  
Author(s):  
G. Mavrou ◽  
S. Galata ◽  
P. Tsipas ◽  
A. Sotiropoulos ◽  
Y. Panayiotatos ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Gate Dielectrics ◽  
Semiconductor Devices ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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