Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

G. Mavrou; S. Galata; P. Tsipas; A. Sotiropoulos; Y. Panayiotatos; A. Dimoulas; E. K. Evangelou; J. W. Seo; Ch. Dieker

doi:10.1063/1.2827499

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

Journal of Applied Physics ◽

10.1063/1.2827499 ◽

2008 ◽

Vol 103 (1) ◽

pp. 014506 ◽

Cited By ~ 86

Author(s):

G. Mavrou ◽

S. Galata ◽

P. Tsipas ◽

A. Sotiropoulos ◽

Y. Panayiotatos ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnOx film as the surface passivation layer

Applied Physics Letters ◽

10.1063/1.4800228 ◽

2013 ◽

Vol 102 (14) ◽

pp. 142906 ◽

Cited By ~ 12

Author(s):

Mei Zhao ◽

Renrong Liang ◽

Jing Wang ◽

Jun Xu

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Surface Passivation ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

Download Full-text

Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

Download Full-text

Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Cited By ~ 1

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c087 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C087 ◽

Cited By ~ 6

Author(s):

Mitsuo Okamoto ◽

Tsutomu Yatsuo ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.4864416 ◽

2014 ◽

Vol 115 (7) ◽

pp. 074502 ◽

Cited By ~ 1

Author(s):

Piyas Samanta ◽

Heng-Sheng Huang ◽

Shuang-Yuan Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

Download Full-text

Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Device with TiOxNy High-k Gate Dielectrics

ECS Transactions ◽

10.1149/1.3569925 ◽

2019 ◽

Vol 35 (3) ◽

pp. 325-332 ◽

Cited By ~ 2

Author(s):

T. Das ◽

Chandreswar Mahata ◽

G Sutradhar ◽

P K Bose ◽

C.K. Maiti

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Device ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High K

Download Full-text

Polarity dependent thermochemical E-model for describing time dependent dielectric breakdown in metal-oxide-semiconductor devices with hyper-thin gate dielectrics

Journal of Applied Physics ◽

10.1063/1.4962320 ◽

2016 ◽

Vol 120 (10) ◽

pp. 104102 ◽

Cited By ~ 4

Author(s):

J. W. McPherson

Keyword(s):

Metal Oxide ◽

Dielectric Breakdown ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Time Dependent Dielectric Breakdown

Download Full-text

Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Applied Physics Letters ◽

10.1063/1.3617436 ◽

2011 ◽

Vol 99 (4) ◽

pp. 042908 ◽

Cited By ~ 47

Author(s):

L. K. Chu ◽

C. Merckling ◽

A. Alian ◽

J. Dekoster ◽

J. Kwo ◽

...

Keyword(s):

Metal Oxide ◽

Molecular Beam ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

Download Full-text

Challenges of Electrical Measurements of Advanced Gate Dielectrics in Metal-Oxide-Semiconductor Devices

10.1063/1.1622558 ◽

2003 ◽

Cited By ~ 2

Author(s):

Eric M. Vogel

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Measurements

Download Full-text

Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2018.05.091 ◽

2018 ◽

Vol 757 ◽

pp. 288-297 ◽

Cited By ~ 7

Author(s):

S.S. Jiang ◽

G. He ◽

Z.B. Fang ◽

P.H. Wang ◽

Y.M. Liu ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Mos Capacitor

Download Full-text