Lu2O3∕Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

P. Darmawan; M. Y. Chan; T. Zhang; Y. Setiawan; H. L. Seng; T. K. Chan; T. Osipowicz; P. S. Lee

doi:10.1063/1.2970036

Lu2O3∕Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.2970036 ◽

2008 ◽

Vol 93 (6) ◽

pp. 062901 ◽

Cited By ~ 9

Author(s):

P. Darmawan ◽

M. Y. Chan ◽

T. Zhang ◽

Y. Setiawan ◽

H. L. Seng ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnOx film as the surface passivation layer

Applied Physics Letters ◽

10.1063/1.4800228 ◽

2013 ◽

Vol 102 (14) ◽

pp. 142906 ◽

Cited By ~ 12

Author(s):

Mei Zhao ◽

Renrong Liang ◽

Jing Wang ◽

Jun Xu

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Surface Passivation ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

Journal of Applied Physics ◽

10.1063/1.2827499 ◽

2008 ◽

Vol 103 (1) ◽

pp. 014506 ◽

Cited By ~ 86

Author(s):

G. Mavrou ◽

S. Galata ◽

P. Tsipas ◽

A. Sotiropoulos ◽

Y. Panayiotatos ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.4864416 ◽

2014 ◽

Vol 115 (7) ◽

pp. 074502 ◽

Cited By ~ 1

Author(s):

Piyas Samanta ◽

Heng-Sheng Huang ◽

Shuang-Yuan Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

P Type

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Polarity dependent thermochemical E-model for describing time dependent dielectric breakdown in metal-oxide-semiconductor devices with hyper-thin gate dielectrics

Journal of Applied Physics ◽

10.1063/1.4962320 ◽

2016 ◽

Vol 120 (10) ◽

pp. 104102 ◽

Cited By ~ 4

Author(s):

J. W. McPherson

Keyword(s):

Metal Oxide ◽

Dielectric Breakdown ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Time Dependent Dielectric Breakdown

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Low interfacial trap density and sub-nm equivalent oxide thickness in In0.53Ga0.47As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO2/Al2O3 as gate dielectrics

Applied Physics Letters ◽

10.1063/1.3617436 ◽

2011 ◽

Vol 99 (4) ◽

pp. 042908 ◽

Cited By ~ 47

Author(s):

L. K. Chu ◽

C. Merckling ◽

A. Alian ◽

J. Dekoster ◽

J. Kwo ◽

...

Keyword(s):

Metal Oxide ◽

Molecular Beam ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Equivalent Oxide Thickness

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Challenges of Electrical Measurements of Advanced Gate Dielectrics in Metal-Oxide-Semiconductor Devices

10.1063/1.1622558 ◽

2003 ◽

Cited By ~ 2

Author(s):

Eric M. Vogel

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Measurements

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Improvement of the SiO2/Si interface of metal‐oxide‐semiconductor devices using gate dielectrics formed by NF3‐aided oxidation and N2O post‐annealing

Journal of Applied Physics ◽

10.1063/1.356230 ◽

1994 ◽

Vol 75 (5) ◽

pp. 2564-2571 ◽

Cited By ~ 1

Author(s):

Jenn Gwo Huang ◽

Ralph J. Jaccodine ◽

Donald R. Young

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Post Annealing

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Radiation hardened metal‐oxide‐semiconductor devices with gate dielectrics grown by rapid thermal processing in O2with diluted NF3

Applied Physics Letters ◽

10.1063/1.104657 ◽

1991 ◽

Vol 58 (4) ◽

pp. 425-427 ◽

Cited By ~ 16

Author(s):

J. Ahn ◽

G. Q. Lo ◽

W. Ting ◽

D. L. Kwong ◽

John Kuehne ◽

...

Keyword(s):

Metal Oxide ◽

Thermal Processing ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Rapid Thermal Processing ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Radiation Hardened

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Fully strained Si0.75Ge0.25 epitaxial films with HfSiO gate dielectrics for high mobility channel metal-oxide semiconductor devices

Microelectronic Engineering ◽

10.1016/j.mee.2008.05.013 ◽

2008 ◽

Vol 85 (8) ◽

pp. 1804-1806 ◽

Cited By ~ 1

Author(s):

Jungwoo Oh ◽

Prashant Majhi ◽

Raj Jammy ◽

Raymond Joe ◽

Takuya Sugawara ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

High Mobility ◽

Epitaxial Films ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Mobility Channel

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