Determination of the plane stress elastic constants of thin films from substrate curvature measurements: Applications to amorphous metals

1993 ◽  
Vol 73 (11) ◽  
pp. 7344-7350 ◽  
Author(s):  
Ann Witvrouw ◽  
Frans Spaepen
Keyword(s):  
Thin Films ◽  
Elastic Constants ◽  
Plane Stress ◽  
Amorphous Metals ◽  
Curvature Measurements ◽  
Substrate Curvature

Determination of Elastic Constants and Viscosity of Amorphous Thin Films From Substrate Curvature

1990 ◽  
Vol 188 ◽  
Author(s):  
Ann Witvrouw ◽  
Frans Spaepen
Keyword(s):  
Thin Films ◽  
Viscous Flow ◽  
Elastic Constants ◽  
Activation Enthalpy ◽  
Amorphous Thin Films ◽  
Curvature Measurements ◽  
Substrate Curvature

ABSTRACTSubstrate curvature measurements were used to monitor viscous flow in Pd79Si21 films at temperatures between 100 and 250°C. To determine the viscosity and the change in viscosity the elastic constants of the film were measured by depositing films on pre-bent substrates: E = 10 ± 1 1010 Pa and ν = 0.43 ± 0.04 The activation enthalpy for η is 13 ± 1 kJ/mole.

Elastic Constants and Viscosity of Amorphous PdSi/PdSiFe Multilayers

1991 ◽  
Vol 239 ◽  
Author(s):  
Ann Witvrouw ◽  
Pamela Campos ◽  
Frans Spaepen
Keyword(s):  
Thin Films ◽  
Viscous Flow ◽  
Elastic Constants ◽  
Repeat Length ◽  
Transient Period ◽  
Curvature Measurements ◽  
Substrate Curvature ◽  
Multilayered Thin Films

ABSTRACTThe biaxial elastic constants and viscosity between 100 and 300 °C of amorphous PdSi/PdSiFe multilayered thin films with repeat lengths between 2.0 and 4.9 nm have been determined using substrate curvature measurements. No dependence on repeat length has been seen for either property. Linear increases of the multilayer viscosities with time are observed. An analysis of the viscous flow of multilayers shows that in the present case this regime is reached after a very short transient period.

The Determination of Mechanical Parameters and Residual Stresses for Thin Films Using Micro-Cantilever Beams

1988 ◽  
Vol 130 ◽  
Author(s):  
S. Hong ◽  
T. P. Weihs ◽  
J. C. Bravman ◽  
W. D. Nix
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Elastic Constants ◽  
Testing Machine ◽  
Elastic Response ◽  
Cantilever Beams ◽  
Mechanical Parameters ◽  
Processing Technologies ◽  
Micro Cantilever

AbstractA method for determining mechanical parameters and residual stresses for thin films is described. Multi-layer cantilever beams (LPCVD SiNx/thermal SiO2) are fabricated utilizing standard IC processing technologies and micromachining of silicon. The elastic response of the beams to imposed deflections is then measured using a Nanoindenter, a sub-micron hardness testing machine. The elastic constants of the nitride films are calculated from the force vs. deflection slope and known elastic constants of the thermal SiO2 and silicon. By measuring the curvature of the multi-layer cantilever beams with a scanning electron microscope after successive etching of the LPCVD nitride films, average and differential stresses in the films were calculated.

Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques

1986 ◽  
Vol 1 (6) ◽  
pp. 845-851 ◽  
Author(s):  
M.F. Doerner ◽  
D.S. Gardner ◽  
W.D. Nix
Keyword(s):  
Thin Films ◽  
Plastic Deformation ◽  
Film Thickness ◽  
Indentation Hardness ◽  
Silicon Substrates ◽  
Strengthening Effect ◽  
Plastic Properties ◽  
Aluminum Films ◽  
Curvature Measurements ◽  
Substrate Curvature

Substrate curvature and submicron indentation measurements have been used recently to study plastic deformation in thin films on substrates. In the present work both of these techniques have been employed to study the strength of aluminum and tungsten thin films on silicon substrates. In the case of aluminum films on silicon substrates, the film strength is found to increase with decreasing thickness. Grain size variations with film thickness do not account for the variations in strength. Wafer curvature measurements give strengths higher than those predicted from hardness measurements suggesting the substrate plays a role in strengthening the film. The observed strengthening effect with decreased thickness may be due to image forces on dislocations in the film due to the elastically stiffer silicon substrate. For sputtered tungsten films, where the substrate is less stiff than the film, the film strength decreases with decreasing film thickness.

Determination of the Mechanical Properties of Polysilicon Thin Films Using Bulge Testing

1997 ◽  
Vol 505 ◽  
Author(s):  
S. Jayaraman ◽  
R. L. Edwards ◽  
K. J. Hemker
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Elastic Constants ◽  
Polycrystalline Silicon ◽  
Silicon Substrates ◽  
Bulge Testing ◽  
Good Agreement

ABSTRACTUsing standard deposition and micromachining techniques, silicon substrates with square and rectangular windows covered with membranes of polycrystalline silicon (polysilicon) have been fabricated. Pressure-displacement curves obtained during the bulge testing of membranes with the above geometries have been used to determine the elastic constants E and v of the polysilicon. The results obtained (E = 162± 4 GPa and v = 0.19±0.03) are in good agreement with literature values for bulk polycrystalline silicon.

Determination of elastic constants in thin films using hydrogen loading

1999 ◽  
Vol 74 (5) ◽  
pp. 647-649 ◽  
Author(s):  
U. Laudahn ◽  
S. Fähler ◽  
H. U. Krebs ◽  
A. Pundt ◽  
M. Bicker ◽  
...  
Keyword(s):  
Thin Films ◽  
Elastic Constants

Determination of the x-ray elastic constants of solid thin films

2007 ◽  
Vol 16 (2) ◽  
pp. 487-492 ◽  
Author(s):  
Y H Yu ◽  
M O Lai ◽  
L Lu
Keyword(s):  
Thin Films ◽  
Elastic Constants ◽  
X Ray ◽  
Solid Thin Films
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