Determination of Elastic Constants and Viscosity of Amorphous Thin Films From Substrate Curvature

1990 ◽  
Vol 188 ◽  
Author(s):  
Ann Witvrouw ◽  
Frans Spaepen
Keyword(s):  
Thin Films ◽  
Viscous Flow ◽  
Elastic Constants ◽  
Activation Enthalpy ◽  
Amorphous Thin Films ◽  
Curvature Measurements ◽  
Substrate Curvature

ABSTRACTSubstrate curvature measurements were used to monitor viscous flow in Pd79Si21 films at temperatures between 100 and 250°C. To determine the viscosity and the change in viscosity the elastic constants of the film were measured by depositing films on pre-bent substrates: E = 10 ± 1 1010 Pa and ν = 0.43 ± 0.04 The activation enthalpy for η is 13 ± 1 kJ/mole.

Elastic Constants and Viscosity of Amorphous PdSi/PdSiFe Multilayers

1991 ◽  
Vol 239 ◽  
Author(s):  
Ann Witvrouw ◽  
Pamela Campos ◽  
Frans Spaepen
Keyword(s):  
Thin Films ◽  
Viscous Flow ◽  
Elastic Constants ◽  
Repeat Length ◽  
Transient Period ◽  
Curvature Measurements ◽  
Substrate Curvature ◽  
Multilayered Thin Films

ABSTRACTThe biaxial elastic constants and viscosity between 100 and 300 °C of amorphous PdSi/PdSiFe multilayered thin films with repeat lengths between 2.0 and 4.9 nm have been determined using substrate curvature measurements. No dependence on repeat length has been seen for either property. Linear increases of the multilayer viscosities with time are observed. An analysis of the viscous flow of multilayers shows that in the present case this regime is reached after a very short transient period.

Modification of some Optical and Mechanical Properties of Amorphous As-S-Se Thin Films by Copper Introduction

2013 ◽  
Vol 856 ◽  
pp. 267-271
Author(s):  
D.D. Štrbac ◽  
G.R. Strbac ◽  
G. Stojanovic ◽  
S.R. Lukic ◽  
D.D. Petrovic
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Absorption Region ◽  
Amorphous Thin Film ◽  
Amorphous Thin Films ◽  
Single Oscillator Model ◽  
Single Oscillator ◽  
Evaporation Technique ◽  
Optical And Mechanical Properties

Abstract. In this research experimental investigation of the influence of copper introduction on some relevant parameters in As-S-Se amorphous thin films is performed. Copper is introduced into As2(S0.5Se0.5)3amorphous thin film in concentration of 3 at.%. Samples of As2(S0.5Se0.5)3and Cu3(As2(S0.5Se0.5)3)97amorphous thin films are prepared by the vacuum thermal evaporation technique from previously synthesized bulk samples. Envelope method is applied for the determination of the optical constants, using the transmission and reflection spectra. The dispersion of the refractive index is discussed in terms of the single oscillator model proposed by Wemple–DiDomenico. Values of absorption coefficients in the high absorption region are discussed according to Tauc's law.Instrumented indentation testing is performed, using the Berkovich geometry indenter, for obtaining the value of nano-hardness.All the determined parameters have shown the increase with introduction of copper into amorphous thin film.

Elastic constants of amorphous thin films in the systems SiO2Al2O3 and AlPO4Al2O3

1989 ◽  
Vol 113 (2-3) ◽  
pp. 213-220 ◽  
Author(s):  
Teiichi Hanada ◽  
Yuki Bessyo ◽  
Naohiro Soga
Keyword(s):  
Thin Films ◽  
Elastic Constants ◽  
Amorphous Thin Films

Viscosity, Structural Relaxation and Defect Annihilation Kinetics of Amorphous Si

1990 ◽  
Vol 205 ◽  
Author(s):  
Ann Witvrouw ◽  
Frans Spaepen
Keyword(s):  
Viscous Flow ◽  
Structural Relaxation ◽  
Activation Enthalpy ◽  
Ion Beam ◽  
Time Characteristic ◽  
Annihilation Process ◽  
Dangling Bonds ◽  
Curvature Measurements ◽  
Amorphous Si ◽  
Kinetics Of

AbstractSubstrate curvature measurements were used to monitor viscous flow in ion beam sputtered amorphous Si for temperatures ranging from 150 to 400 °C. The viscosity increases linearly with time, characteristic of a bimolecular defect annihilation process. This is consistent with the defects governing viscous flow being dangling bonds. The isoconfigurational activation enthalpy for the viscosity is 1.8 ±.3 eV.

The Determination of Mechanical Parameters and Residual Stresses for Thin Films Using Micro-Cantilever Beams

1988 ◽  
Vol 130 ◽  
Author(s):  
S. Hong ◽  
T. P. Weihs ◽  
J. C. Bravman ◽  
W. D. Nix
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Elastic Constants ◽  
Testing Machine ◽  
Elastic Response ◽  
Cantilever Beams ◽  
Mechanical Parameters ◽  
Processing Technologies ◽  
Micro Cantilever

AbstractA method for determining mechanical parameters and residual stresses for thin films is described. Multi-layer cantilever beams (LPCVD SiNx/thermal SiO2) are fabricated utilizing standard IC processing technologies and micromachining of silicon. The elastic response of the beams to imposed deflections is then measured using a Nanoindenter, a sub-micron hardness testing machine. The elastic constants of the nitride films are calculated from the force vs. deflection slope and known elastic constants of the thermal SiO2 and silicon. By measuring the curvature of the multi-layer cantilever beams with a scanning electron microscope after successive etching of the LPCVD nitride films, average and differential stresses in the films were calculated.

Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques

1986 ◽  
Vol 1 (6) ◽  
pp. 845-851 ◽  
Author(s):  
M.F. Doerner ◽  
D.S. Gardner ◽  
W.D. Nix
Keyword(s):  
Thin Films ◽  
Plastic Deformation ◽  
Film Thickness ◽  
Indentation Hardness ◽  
Silicon Substrates ◽  
Strengthening Effect ◽  
Plastic Properties ◽  
Aluminum Films ◽  
Curvature Measurements ◽  
Substrate Curvature

Substrate curvature and submicron indentation measurements have been used recently to study plastic deformation in thin films on substrates. In the present work both of these techniques have been employed to study the strength of aluminum and tungsten thin films on silicon substrates. In the case of aluminum films on silicon substrates, the film strength is found to increase with decreasing thickness. Grain size variations with film thickness do not account for the variations in strength. Wafer curvature measurements give strengths higher than those predicted from hardness measurements suggesting the substrate plays a role in strengthening the film. The observed strengthening effect with decreased thickness may be due to image forces on dislocations in the film due to the elastically stiffer silicon substrate. For sputtered tungsten films, where the substrate is less stiff than the film, the film strength decreases with decreasing film thickness.

Sign in / Sign up

Export Citation Format

Share Document