The Determination of Mechanical Parameters and Residual Stresses for Thin Films Using Micro-Cantilever Beams

1988 ◽  
Vol 130 ◽  
Author(s):  
S. Hong ◽  
T. P. Weihs ◽  
J. C. Bravman ◽  
W. D. Nix
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Elastic Constants ◽  
Testing Machine ◽  
Elastic Response ◽  
Cantilever Beams ◽  
Mechanical Parameters ◽  
Processing Technologies ◽  
Micro Cantilever

AbstractA method for determining mechanical parameters and residual stresses for thin films is described. Multi-layer cantilever beams (LPCVD SiNx/thermal SiO2) are fabricated utilizing standard IC processing technologies and micromachining of silicon. The elastic response of the beams to imposed deflections is then measured using a Nanoindenter, a sub-micron hardness testing machine. The elastic constants of the nitride films are calculated from the force vs. deflection slope and known elastic constants of the thermal SiO2 and silicon. By measuring the curvature of the multi-layer cantilever beams with a scanning electron microscope after successive etching of the LPCVD nitride films, average and differential stresses in the films were calculated.

Elastic Properties and Stresses in Polyimide thin Films and Coatings

1994 ◽  
Vol 356 ◽  
Author(s):  
Kapil C. Sheth ◽  
Michael Chen ◽  
Richard J. Farris
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Real Time ◽  
Elastic Properties ◽  
Elastic Constants ◽  
Holographic Interferometry ◽  
Moisture Diffusion ◽  
Complex Geometries ◽  
Diffusion Constants

AbstractPolyimide thin films and coatings (< 20μm) for electronic applications have been fully characterized. Analysis of residual stresses and determination of all 21 anisotropic constants are necessary for a better understanding of these coatings in complex geometries. The residual stresses have been measured by a real-time vibrational holographic interferometry technique. The number of elastic constants is reduced to 9 independent constants by finding the orthotopic axes. All the 9 orthotropic constants - 3 normal compliances, 3 shear compliances and 3 independent Poisson’s ratios - have been determined. Moisture diffusion constants have also been measured.

scholarly journals Determination of the elastic moduli and residual stresses of freestanding Au-TiW bilayer thin films by nanoindentation

2016 ◽  
Vol 106 ◽  
pp. 436-445 ◽  
Author(s):  
Matteo Ghidelli ◽  
Marco Sebastiani ◽  
Christian Collet ◽  
Raphael Guillemet
Keyword(s):  
Thin Films ◽  
Residual Stresses ◽  
Elastic Moduli

Calculation of Intrinsic Stresses and Elastic Moduli in Nonhomogeneous Thin Films

2000 ◽  
Vol 653 ◽  
Author(s):  
Pedro C. Andia ◽  
Francesco Costanzo ◽  
Gary L. Gray ◽  
Thomas J. Yurick
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stresses ◽  
Computer Simulations ◽  
System Application ◽  
Elastic Moduli ◽  
Particle System ◽  
Particle Systems

AbstractAn approach is presented for the determination of the residual stresses and elastic moduli of particle systems resulting from computer simulations of particle or atomic deposition. The proposed technique is based on fundamental concepts of elasticity and is capable of capturing the variation of stresses and moduli as functions of position within the system. Application to a simple particle system consisting of a deposited thin film is demonstrated.

Determination of the Mechanical Properties of Polysilicon Thin Films Using Bulge Testing

1997 ◽  
Vol 505 ◽  
Author(s):  
S. Jayaraman ◽  
R. L. Edwards ◽  
K. J. Hemker
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Elastic Constants ◽  
Polycrystalline Silicon ◽  
Silicon Substrates ◽  
Bulge Testing ◽  
Good Agreement

ABSTRACTUsing standard deposition and micromachining techniques, silicon substrates with square and rectangular windows covered with membranes of polycrystalline silicon (polysilicon) have been fabricated. Pressure-displacement curves obtained during the bulge testing of membranes with the above geometries have been used to determine the elastic constants E and v of the polysilicon. The results obtained (E = 162± 4 GPa and v = 0.19±0.03) are in good agreement with literature values for bulk polycrystalline silicon.

Determination of elastic constants in thin films using hydrogen loading

1999 ◽  
Vol 74 (5) ◽  
pp. 647-649 ◽  
Author(s):  
U. Laudahn ◽  
S. Fähler ◽  
H. U. Krebs ◽  
A. Pundt ◽  
M. Bicker ◽  
...  
Keyword(s):  
Thin Films ◽  
Elastic Constants

Determination of residual stresses in Pb(Zr0.53Ti0.47)O3 thin films with Raman spectroscopy

2001 ◽  
Vol 79 (25) ◽  
pp. 4112-4114 ◽  
Author(s):  
Wei-Hua Xu ◽  
Dexin Lu ◽  
Tong-Yi Zhang
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Residual Stresses
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