Elastic Constants and Viscosity of Amorphous PdSi/PdSiFe Multilayers

1991 ◽  
Vol 239 ◽  
Author(s):  
Ann Witvrouw ◽  
Pamela Campos ◽  
Frans Spaepen
Keyword(s):  
Thin Films ◽  
Viscous Flow ◽  
Elastic Constants ◽  
Repeat Length ◽  
Transient Period ◽  
Curvature Measurements ◽  
Substrate Curvature ◽  
Multilayered Thin Films

ABSTRACTThe biaxial elastic constants and viscosity between 100 and 300 °C of amorphous PdSi/PdSiFe multilayered thin films with repeat lengths between 2.0 and 4.9 nm have been determined using substrate curvature measurements. No dependence on repeat length has been seen for either property. Linear increases of the multilayer viscosities with time are observed. An analysis of the viscous flow of multilayers shows that in the present case this regime is reached after a very short transient period.

Determination of Elastic Constants and Viscosity of Amorphous Thin Films From Substrate Curvature

1990 ◽  
Vol 188 ◽  
Author(s):  
Ann Witvrouw ◽  
Frans Spaepen
Keyword(s):  
Thin Films ◽  
Viscous Flow ◽  
Elastic Constants ◽  
Activation Enthalpy ◽  
Amorphous Thin Films ◽  
Curvature Measurements ◽  
Substrate Curvature

ABSTRACTSubstrate curvature measurements were used to monitor viscous flow in Pd79Si21 films at temperatures between 100 and 250°C. To determine the viscosity and the change in viscosity the elastic constants of the film were measured by depositing films on pre-bent substrates: E = 10 ± 1 1010 Pa and ν = 0.43 ± 0.04 The activation enthalpy for η is 13 ± 1 kJ/mole.

Plastic properties of thin films on substrates as measured by submicron indentation hardness and substrate curvature techniques

1986 ◽  
Vol 1 (6) ◽  
pp. 845-851 ◽  
Author(s):  
M.F. Doerner ◽  
D.S. Gardner ◽  
W.D. Nix
Keyword(s):  
Thin Films ◽  
Plastic Deformation ◽  
Film Thickness ◽  
Indentation Hardness ◽  
Silicon Substrates ◽  
Strengthening Effect ◽  
Plastic Properties ◽  
Aluminum Films ◽  
Curvature Measurements ◽  
Substrate Curvature

Substrate curvature and submicron indentation measurements have been used recently to study plastic deformation in thin films on substrates. In the present work both of these techniques have been employed to study the strength of aluminum and tungsten thin films on silicon substrates. In the case of aluminum films on silicon substrates, the film strength is found to increase with decreasing thickness. Grain size variations with film thickness do not account for the variations in strength. Wafer curvature measurements give strengths higher than those predicted from hardness measurements suggesting the substrate plays a role in strengthening the film. The observed strengthening effect with decreased thickness may be due to image forces on dislocations in the film due to the elastically stiffer silicon substrate. For sputtered tungsten films, where the substrate is less stiff than the film, the film strength decreases with decreasing film thickness.

scholarly journals Nanoindentation Study of Amorphous Metal Multilayered Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
J. B. Vella ◽  
R. C. Cammarata ◽  
T. P. Weihs ◽  
C. L. Chien ◽  
A. B. Mann ◽  
...  
Keyword(s):  
Thin Films ◽  
Plastic Deformation ◽  
Amorphous Metal ◽  
Repeat Length ◽  
Total Thickness ◽  
Sapphire Substrates ◽  
Multilayered Systems ◽  
Magnetron Sputter ◽  
Sputter Deposited ◽  
Multilayered Thin Films

AbstractNanoindentation studies were preformed on amorphous metal, multilayered thin films containing alternating layers of Fe50Ti50 and Cu35Nb65 in order to investigate the mechanism for plastic deformation in metallic glass. Films with a total thickness of 1μm and bilayer repeat lengths ranging from 2 to 50 nm were magnetron sputter-deposited onto sapphire substrates. In contrast to many crystalline multilayered systems, where large hardness enhancements have been observed when the bilayer repeat length is reduced below about 10 nm, no significant hardness enhancement as a function of bilayer repeat length was observed in the Fe50Ti50/ Cu35Nb65 amorphous metal system. This result suggests that a dislocation–like mechanism for plastic deformation may not be appropriate for these amorphous metals.

Stress Relaxation in Al-Si-Cu Thin Films and Lines

1994 ◽  
Vol 356 ◽  
Author(s):  
A. Witvrouw ◽  
J. Proost ◽  
B. Deweerdt ◽  
Ph. Roussel ◽  
K. Maex
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Flow Stress ◽  
Stress Relaxation ◽  
Relaxation Data ◽  
Cu Films ◽  
Dislocation Glide ◽  
Average Activation Energy ◽  
Curvature Measurements ◽  
Substrate Curvature

AbstractSubstrate curvature measurements were used to study stress relaxation in Al-Si-Cu films at temperatures between 45 and 165 °C. Dislocation glide with an average activation energy, resp. athermal flow stress of 1.7 ± 0.2 eV, resp. 600 ± 200 MPa could describe the relaxation data for temperatures up to 120 °C well. Stress relaxation at 92 °C was found to progress much slower in 1 μm wide nitride passivated lines than in thin films or unpassivated lines.

Chromium multilayered thin films with orientated microstructure

2005 ◽  
Vol 123 ◽  
pp. 137-142 ◽  
Author(s):  
J. Takadoum ◽  
J. Lintymer ◽  
J. Gavoille ◽  
N. Martin
Keyword(s):  
Thin Films ◽  
Multilayered Thin Films

X-ray elastic constants determined by the combination of sin2ψ and substrate-curvature methods

2005 ◽  
Vol 96 (9) ◽  
pp. 1069-1073 ◽  
Author(s):  
Ernst Eiper ◽  
Klaus J. Martinschitz ◽  
Jürgen W. Gerlach ◽  
Jürgen M. Lackner ◽  
Ivo Zizak ◽  
...  
Keyword(s):  
Elastic Constants ◽  
X Ray ◽  
Substrate Curvature

Synthesis of Nanocomposite thin film Ti/Al Multilayers and Ti-Aluminides

1996 ◽  
Vol 457 ◽  
Author(s):  
R. Banerjee ◽  
X. D. Zhang ◽  
S. A. Dregia ◽  
H. L. Fraser
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Layer Thickness ◽  
Thermodynamic Model ◽  
Interfacial Reactions ◽  
Experimental Results ◽  
Structural Transitions ◽  
Nanocomposite Thin Film ◽  
Multilayered Thin Films

ABSTRACTNanocomposite Ti/Al multilayered thin films have been deposited by magnetron sputtering. These multilayers exhibit interesting structural transitions on reducing the layer thickness of both Ti and Al. Ti transforms from its bulk stable hep structure to fee and Al transforms from fee to hep. The effect of ratio of Ti layer thickness to Al layer thickness on the structural transitions has been investigated for a constant bilayer periodicity of 10 nm by considering three different multilayers: 7.5 nm Ti / 2.5 nm Al, 5 nm Ti / 5 nm Al and 2.5 nm Ti / 7.5 nm Al. The experimental results have been qualitatively explained on the basis of a thermodynamic model. Preliminary experimental results of interfacial reactions in Ti/Al bilayers resulting in the formation of Ti-aluminides are also presented in the paper.

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