Effect of scanning speed on the stability of the solidification interface during zone‐melting recrystallization of thin silicon films

1992 ◽  
Vol 72 (1) ◽  
pp. 316-318 ◽  
Author(s):  
Sharon M. Yoon ◽  
Ioannis N. Miaoulis
Keyword(s):  
Scanning Speed ◽  
Zone Melting ◽  
Silicon Films ◽  
Solidification Interface ◽  
Thin Silicon ◽  
The Stability

Morphological Features of the Solid-Liquid Interface of a Gallium Film

1991 ◽  
Vol 237 ◽  
Author(s):  
Richard D. Robinson ◽  
Ioannis N. Miaoulis
Keyword(s):  
Preliminary Investigation ◽  
Zone Melting ◽  
Liquid Interface ◽  
Silicon Films ◽  
Processing Conditions ◽  
Scanning Velocity ◽  
Solidification Interface ◽  
Solid Liquid Interface ◽  
Solid Liquid

ABSTRACTThis paper presents a new experimental method to investigate solid-liquid interface morphologies during Zone-Melting-Recrystallization at lower than the typical processing temperatures. Gallium films were used as a substitute for silicon films. In situ preliminary investigation identified three phenomena typically occurring during ZMR of silicon films: a) Transition from planar to dendritic to cellular morphologies was observed for different processing conditions; b) cell period proved to be dependant on scanning velocity; c) instabilities at the solidification interface at low heating strip temperatures were caused by supercooling and optical property variations as the material changed phase.

Numerical Simulation of Zone-Melting Recrystallization of Thin Silicon Films With A Tungsten Halogen Lamp

1991 ◽  
Vol 235 ◽  
Author(s):  
Richard D. Robinson ◽  
Ioannis N. Miaoulis
Keyword(s):  
Numerical Simulation ◽  
Parametric Study ◽  
Thermal Effects ◽  
Zone Melting ◽  
Incandescent Lamp ◽  
Silicon Films ◽  
Halogen Lamp ◽  
Two Dimensional ◽  
Thin Silicon ◽  
Tungsten Halogen Lamp

ABSTRACTA two dimensional numerical simulation of incandescent lamp Zone-Melting Recrystallization (ZMR) was performed. A parametric study examined the thermal effects of lamp intensity, susceptor temperature, and ambient reflectivity, on the melt zone. The melt zone was found to vary linearly with lamp intensity and parabolically with susceptor temperature and ambient reflectivity.

A Thermal Instability in the Laser-Driven Melting and Recrystallization of Thin Silicon Films on Glass Substrates

1987 ◽  
Vol 109 (4) ◽  
pp. 841-847 ◽  
Author(s):  
C. P. Grigoropoulos ◽  
R. H. Buckholz ◽  
G. A. Domoto
Keyword(s):  
Thermal Instability ◽  
Scanning Speed ◽  
Silicon Films ◽  
Temperature Fields ◽  
Linear Perturbation ◽  
Conductive Heat ◽  
Glass Substrates ◽  
Conductive Glass ◽  
Temperature Distributions ◽  
Thin Silicon

This paper develops a conductive heat transfer stability theory for the laser-driven melting and recrystallization of thin silicon films deposited on conductive (glass) substrates. The important parameters are: laser power, laser intensity distribution, and beam scanning speed. Basic state temperature distributions are obtained for straight phase boundaries. These calculated temperature distributions show the origin of instability. A linear perturbation analysis is used to obtain the leading order corrections to the basic-state temperature fields. The perturbation time rate of growth, as a function of the disturbance wavelength, is then predicted.

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

A simple quality factor for characterization of thin silicon films

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2227-2230 ◽  
Author(s):  
J. Kočka ◽  
T. Mates ◽  
M. Ledinský ◽  
H. Stuchlíková ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Quality Factor ◽  
Silicon Films ◽  
Thin Silicon

Optical properties of ultra-thin silicon films deposited on nanostructured anodic alumina surfaces

2014 ◽  
Vol 104 (8) ◽  
pp. 081119 ◽  
Author(s):  
Shu-Yi Wang ◽  
Diana-Andra Borca-Tasciuc ◽  
Deborah A. Kaminski
Keyword(s):  
Optical Properties ◽  
Anodic Alumina ◽  
Silicon Films ◽  
Thin Silicon
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