Optical properties of ultra-thin silicon films deposited on nanostructured anodic alumina surfaces

2014 ◽  
Vol 104 (8) ◽  
pp. 081119 ◽  
Author(s):  
Shu-Yi Wang ◽  
Diana-Andra Borca-Tasciuc ◽  
Deborah A. Kaminski
Keyword(s):  
Optical Properties ◽  
Anodic Alumina ◽  
Silicon Films ◽  
Thin Silicon

scholarly journals Nanostructure of thin silicon films by combining HRTEM, XRD and Raman spectroscopy measurements and the implication to the optical properties

2008 ◽  
Vol 254 (9) ◽  
pp. 2748-2754 ◽  
Author(s):  
Andreja Gajović ◽  
Davor Gracin ◽  
Igor Djerdj ◽  
Nenad Tomašić ◽  
Krunoslav Juraić ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Optical Properties ◽  
Silicon Films ◽  
Thin Silicon

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Optical properties of multiple energy silicon implantation in silicon films using silicon-on-insulator targets

2021 ◽  
Vol 116 ◽  
pp. 111065
Author(s):  
Chen Li ◽  
Lingxi Ouyang ◽  
Xiaonan Li ◽  
Congcong Xu ◽  
Jiyang Xie ◽  
...  
Keyword(s):  
Optical Properties ◽  
Silicon Films ◽  
Silicon On Insulator ◽  
Silicon Implantation

A simple quality factor for characterization of thin silicon films

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2227-2230 ◽  
Author(s):  
J. Kočka ◽  
T. Mates ◽  
M. Ledinský ◽  
H. Stuchlíková ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Quality Factor ◽  
Silicon Films ◽  
Thin Silicon

scholarly journals Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films

2006 ◽  
Vol 55 (5) ◽  
pp. 2523
Author(s):  
Huang Rui ◽  
Lin Xuan-Ying ◽  
Yu Yun-Peng ◽  
Lin Kui-Xun ◽  
Zhu Zu-Song ◽  
...  
Keyword(s):  
Optical Properties ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Hydrogen Dilution ◽  
Polycrystalline Silicon Films
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