Thermal analysis of incandescent lamp zone‐melting recrystallization of thin silicon films

1993 ◽  
Vol 73 (1) ◽  
pp. 439-447 ◽  
Author(s):  
Richard D. Robinson ◽  
Ioannis N. Miaoulis
Keyword(s):  
Thermal Analysis ◽  
Zone Melting ◽  
Incandescent Lamp ◽  
Silicon Films ◽  
Thin Silicon

Numerical Simulation of Zone-Melting Recrystallization of Thin Silicon Films With A Tungsten Halogen Lamp

1991 ◽  
Vol 235 ◽  
Author(s):  
Richard D. Robinson ◽  
Ioannis N. Miaoulis
Keyword(s):  
Numerical Simulation ◽  
Parametric Study ◽  
Thermal Effects ◽  
Zone Melting ◽  
Incandescent Lamp ◽  
Silicon Films ◽  
Halogen Lamp ◽  
Two Dimensional ◽  
Thin Silicon ◽  
Tungsten Halogen Lamp

ABSTRACTA two dimensional numerical simulation of incandescent lamp Zone-Melting Recrystallization (ZMR) was performed. A parametric study examined the thermal effects of lamp intensity, susceptor temperature, and ambient reflectivity, on the melt zone. The melt zone was found to vary linearly with lamp intensity and parabolically with susceptor temperature and ambient reflectivity.

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

A simple quality factor for characterization of thin silicon films

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2227-2230 ◽  
Author(s):  
J. Kočka ◽  
T. Mates ◽  
M. Ledinský ◽  
H. Stuchlíková ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Quality Factor ◽  
Silicon Films ◽  
Thin Silicon

Optical properties of ultra-thin silicon films deposited on nanostructured anodic alumina surfaces

2014 ◽  
Vol 104 (8) ◽  
pp. 081119 ◽  
Author(s):  
Shu-Yi Wang ◽  
Diana-Andra Borca-Tasciuc ◽  
Deborah A. Kaminski
Keyword(s):  
Optical Properties ◽  
Anodic Alumina ◽  
Silicon Films ◽  
Thin Silicon

Fabrication of Crystalline Silicon Films for Solar Cells by a New Method of Gas-Flow Zone Melting Crystallization.

2003 ◽  
Vol 29 (2) ◽  
pp. 242-247
Author(s):  
Shuhei Yokoyama ◽  
Manabu Ihara ◽  
Hiroaki Hashizume ◽  
Hiroshi Komiyama ◽  
Chiaki Yokoyama
Keyword(s):  
Solar Cells ◽  
Gas Flow ◽  
Crystalline Silicon ◽  
Zone Melting ◽  
Silicon Films ◽  
New Method ◽  
Flow Zone

Thermal Analysis of Zone‐Melting Recrystallization of Silicon‐on‐Insulator Structures with an Infrared Heat Source: An Overview

1992 ◽  
Vol 139 (9) ◽  
pp. 2687-2695 ◽  
Author(s):  
I. N. Miaoulis ◽  
P. Y. Wong ◽  
S. M. Yoon ◽  
R. D. Robinson ◽  
C. K. Hess
Keyword(s):  
Thermal Analysis ◽  
Heat Source ◽  
Zone Melting ◽  
Silicon On Insulator
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