Numerical Simulation of Zone-Melting Recrystallization of Thin Silicon Films With A Tungsten Halogen Lamp

1991 ◽  
Vol 235 ◽  
Author(s):  
Richard D. Robinson ◽  
Ioannis N. Miaoulis
Keyword(s):  
Numerical Simulation ◽  
Parametric Study ◽  
Thermal Effects ◽  
Zone Melting ◽  
Incandescent Lamp ◽  
Silicon Films ◽  
Halogen Lamp ◽  
Two Dimensional ◽  
Thin Silicon ◽  
Tungsten Halogen Lamp

ABSTRACTA two dimensional numerical simulation of incandescent lamp Zone-Melting Recrystallization (ZMR) was performed. A parametric study examined the thermal effects of lamp intensity, susceptor temperature, and ambient reflectivity, on the melt zone. The melt zone was found to vary linearly with lamp intensity and parabolically with susceptor temperature and ambient reflectivity.

On the Response of Elastic-Plastic Tubes Under Combined Bending and Tension

1992 ◽  
Vol 114 (1) ◽  
pp. 50-62 ◽  
Author(s):  
J. Y. Dyau ◽  
S. Kyriakides
Keyword(s):  
Numerical Simulation ◽  
Parametric Study ◽  
Axial Load ◽  
Test Specimen ◽  
Experimental Results ◽  
Two Dimensional ◽  
Plastic Range ◽  
Rigid Surface ◽  
Axial Tension ◽  
Thin Walled

This paper is concerned with the response of long, relatively thin-walled tubes bent into the plastic range in the presence of axial tension. The work is motivated by the design needs of pipelines installed and operated in deep offshore waters. The problem is studied through a combination of experiment and analysis. In the experiments, long metal tubes were bent over a smooth, circular, rigid surface (mandrel). Bending of the tubes was achieved by shear and axial end loads. The experimental arrangement is such that a significant section of the test specimen is loaded and deformed in an axially uniform fashion. The ovalization induced in the specimen was measured as a function of the axial load in the tube for two mandrel radii. A two-dimensional numerical simulation of the problem has been developed and validated against the experimental results. This analysis was used to conduct a parametric study of the effect of tension on the ovalization induced in a long tube during bending.

Lifetime Regime in the Electrically-Detected Transient Grating Method Applied to Amorphous and Microcrystalline Silicon Films

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Sanguino ◽  
M. Niehus ◽  
S. Koynov ◽  
P. Brogueira ◽  
R. Schwarz ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Analytical Calculation ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Dielectric Relaxation Time ◽  
Transient Grating ◽  
Minority Carrier Diffusion Length ◽  
Carrier Recombination ◽  
Thin Silicon ◽  
Good Agreement

AbstractThe minority-carrier diffusion length in thin silicon films can be extracted from the electrically-detected transient grating method, EDTG, by a simple ambipolar analysis only in the case of lifetime dominated carrier transport. If the dielectric relaxation time, τdiel, is larger than the photocarrier response time, τR, then unexpected negative transient signals can appear in the EDTG result. Thin silicon films deposited by hot-wire chemical vapor deposition (HWCVD) near the amorphous-to-microcrystalline transition, where τR varies over a large range, appeared to be ideal candidates to study the interplay between carrier recombination and dielectric response. By modifying the ambipolar description to allow for a time-dependent carrier grating build-up and decay we can obtain a good agreement between analytical calculation and experimental results.

Contacting Diffusion with FIB for Backside Circuit Edit—Procedures and Material Analysis

2005 ◽  
Author(s):  
U. Kerst ◽  
P. Sadewater ◽  
R. Schlangen ◽  
C. Boit ◽  
R. Leihkauf ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Electrical Properties ◽  
Process Parameters ◽  
Thermal Effects ◽  
Silicon Surface ◽  
Ohmic Contacts ◽  
Ion Beam ◽  
Schottky Barriers ◽  
Material Analysis ◽  
Type Silicon

Abstract The feasibility of low-ohmic FIB contacts to silicon with a localized silicidation was presented at ISTFA 2004 [1]. We have systematically explored options in contacting diffusions with FIB metal depositions directly. A demonstration of a 200nm x 200nm contact on source/drain diffusion level is given. The remaining article focuses on the properties of FIB deposited contacts on differently doped n-type Silicon. After the ion beam assisted platinum deposition a silicide was formed using a forming current in two configurations. The electrical properties of the contacts are compared to furnace anneal standards. Parameters of Schottky-barriers and thermal effects of the formation current are studied with numerical simulation. TEM images and material analysis of the low ohmic contacts show a Pt-silicide formed on a silicon surface with no visible defects. The findings indicate which process parameters need a more detailed investigation in order to establish values for a practical process.

Sign in / Sign up

Export Citation Format

Share Document