Surface Passivation and the Ultrafast Optical Response of Low-Temperature-Grown GaAs

1995 ◽  
Vol 378 ◽  
Author(s):  
H. H. Wang ◽  
J. F. Whitaker ◽  
K. Al-Hemyari ◽  
S. L. Williamson
Keyword(s):  
Low Temperature ◽  
Dark Current ◽  
Surface Passivation ◽  
Surface States ◽  
Time Response ◽  
Temporal Response ◽  
Dc Voltage ◽  
Ultrafast Optical ◽  
Metal Semiconductor Metal ◽  
Low Temperature Grown Gaas

AbstractMetal-semiconductor-metal photodetectors fabricated using low-temperature-grown GaAs have been passivated using AlGaAs cap layers in order to understand the influence of surface states and fields on the properties of these detectors. It has been found that passivation has little effect on the time response or persistent photoconductive tails associated with the detectors, but that responsivity and dark current can be enhanced in certain circumstances. The dependence of the temporal response on optical fluence and dc-voltage bias were observed for both passivated and unpassivated detectors.

Ultrafast nanoscale metal‐semiconductor‐metal photodetectors on bulk and low‐temperature grown GaAs

1992 ◽  
Vol 61 (7) ◽  
pp. 819-821 ◽  
Author(s):  
S. Y. Chou ◽  
Y. Liu ◽  
W. Khalil ◽  
T. Y. Hsiang ◽  
S. Alexandrou
Keyword(s):  
Low Temperature ◽  
Metal Semiconductor Metal ◽  
Low Temperature Grown Gaas

LARGE AREA GaN METAL SEMICONDUCTOR METAL (MSM) PHOTODIODE USING A THIN LOW TEMPERATURE GaN CAP LAYER

2008 ◽  
Vol 17 (01) ◽  
pp. 59-69 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN ◽  
C. W. CHIN ◽  
S. M. THAHAB
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Dark Current ◽  
High Speed ◽  
Distributed Data ◽  
Large Area ◽  
Device Structure ◽  
Metal Semiconductor Metal ◽  
Large Active Area ◽  
Schottky Photodiode

Small area metal semiconductor metal (MSM) photodiode (PD) has been one of the most favoured detector choices for high speed optoelectronics integrated circuits due to their low parasitic capacitance and simple planar device structure, which is compatible with FETs. Large MSM PDs, on the other hand, can also be useful in many network and interconnect applications such as fibre distributed data interfaces. An MBE grown GaN metal semiconductor metal photodiode with a thin low temperature GaN (50nm) barrier enhancement layer is reported, which has low dark current. The detector using Nickel ( Ni ) Schottky metal fingers with 400 μm spacing on a large active area exhibit a low dark current of 1.23 mA at 10 V bias, which is about three orders of magnitude lower than that of the normal GaN Schottky photodiode.

Low-temperature grown GaAs heterojunction metal-semiconductor-metal photodetectors improve speed and efficiency

2011 ◽  
Vol 99 (20) ◽  
pp. 203502 ◽  
Author(s):  
Marc Currie ◽  
Fabio Quaranta ◽  
Adriano Cola ◽  
Eric M. Gallo ◽  
Bahram Nabet
Keyword(s):  
Low Temperature ◽  
Metal Semiconductor Metal ◽  
Low Temperature Grown Gaas

scholarly journals Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal traveling-wave photodetectors

2002 ◽  
Vol 80 (21) ◽  
pp. 4054-4056 ◽  
Author(s):  
Kian-Giap Gan ◽  
Jin-Wei Shi ◽  
Yen-Hung Chen ◽  
Chi-Kuang Sun ◽  
Yi-Jen Chiu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Traveling Wave ◽  
Product Performance ◽  
Metal Semiconductor Metal ◽  
Low Temperature Grown Gaas

scholarly journals Boosted Ultraviolet Photodetection of AlGaN Quantum-Disk Nanowires via Rational Surface Passivation

2021 ◽  
Author(s):  
Chen Huang ◽  
Fangzhou Liang ◽  
Huabin Yu ◽  
Meng Tian ◽  
Haochen Zhang ◽  
...  
Keyword(s):  
Dark Current ◽  
Surface Passivation ◽  
Solution Treatment ◽  
Surface States ◽  
Volume Ratio ◽  
Ammonium Hydroxide ◽  
Underlying Mechanism ◽  
Rational Surface ◽  
Quantum Disk ◽  
Order Of Magnitude

Abstract Self-assembled AlGaN nanowires (NWs) are regarded as promising structures in the pursuit of ultraviolet photodetectors (UV PDs). However, AlGaN nanowire-based PDs currently suffer from degraded performance partially owing to the existence of outstanding surface-related defects/traps as a result of its large surface-to-volume-ratio feature. Here, we propose an effective passivation approach to suppress such surface states via tetramethyl ammonium hydroxide (TMAH) solution treatment. We successfully demonstrate a fabrication of UV PDs using TMAH-passivated AlGaN quantum-disk NWs and investigate their optical and electrical properties. Particularly, the dark current can be significantly reduced by an order of magnitude after surface passivation, thus leading to the improvement of photoresponsivity and detectivity. The underlying mechanism for such boost can be ascribed to the effective elimination of oxygen-related surface states on the nanowire surface. Consequently, an AlGaN nanowire UV PD with a low dark current of 6.22×10-9 A, a large responsivity of 0.95 A W-1, and a high detectivity of 6.4×1011 Jones has been achieved.

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