Silicon‐on‐insulator material formed by oxygen implantation and high‐temperature annealing: Carrier transport, oxygen activity, and interface properties

1987 ◽  
Vol 62 (7) ◽  
pp. 2793-2798 ◽  
Author(s):  
S. Cristoloveanu ◽  
S. Gardner ◽  
C. Jaussaud ◽  
J. Margail ◽  
A. J. Auberton‐Hervé ◽  
...  
Keyword(s):  
High Temperature ◽  
Carrier Transport ◽  
Silicon On Insulator ◽  
Oxygen Activity ◽  
Interface Properties ◽  
High Temperature Annealing ◽  
Oxygen Implantation

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

High-Quality SOI by Oxygen Implantation into Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
A. H. van Ommen ◽  
H. J. Ligthart ◽  
J. Politiek ◽  
M. P. A. Viegers
Keyword(s):  
High Temperature ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Quality ◽  
Cubic Symmetry ◽  
Buried Oxide ◽  
Simple Cubic ◽  
Precipitate Growth

ABSTRACTHigh quality Silicon-On-Insulator, with a dislocation density lower than 105cm−2, has been formed by high temperature annealing of high-dose oxygen implanted silicon. In the as-implanted state, oxygen was found to form precipitates in the top silicon film. In the upper region these precipitates were found to order into a superlattice of simple cubic symmetry. Near the interface with the buried oxide film the precipitates are larger and no ordering occurs in that region. Contrary to implants without precipitate ordering where dislocations are observed across the entire layer thickness of the top silicon film, dislocations are now only found near the buried oxide. The precipitate ordering appears to prevent the dislocations to climb to the surface. High temperature annealing results in precipitate growth in this region whereas they dissolve elsewhere. These growing precipitates pin the dislocations and elimination of precipitates and dislocations occurs simultaneously, resulting in good quality SOI material.

Precipitation in silicon-on-insulator material during high- temperature annealing

1987 ◽  
Vol 45 ◽  
pp. 254-255
Author(s):  
S. J. Krause ◽  
C. O. Jung ◽  
S.R. Wilson
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Annealing Time ◽  
High Speed ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
Precipitate Size ◽  
High Dose ◽  
High Temperature Annealing ◽  
Implantation Energy

Silicon-on-insulator (SOI) structure by high dose oxygen implantation (SIMOX) has excellent potential for use in radiation hardened and high speed integrated circuits. Device fabrication in SIMOX requires a high quality superficial Si layer above the buried oxide layer. Previously we reported on the effect of heater temperature, background doping, and annealing cycle on precipitate size, density, and location in the superficial Si layer. Precipitates were not eliminated with our processing conditions, but various authors have recently reported that high temperature annealing of SIMOX, from 1250°C to 1405°C, eliminates virtually all precipitates in the superficial Si layer. However, in those studies there were significant differences in implantation energy and dose and also annealing time and temperature. Here we are reporting on the effect of annealing time and temperature on the formation and changes in precipitates.

Influence of oxygen implantation conditions on the properties of a high‐temperature‐annealed silicon‐on‐insulator material

1986 ◽  
Vol 49 (21) ◽  
pp. 1423-1425 ◽  
Author(s):  
A. Golanski ◽  
A. Perio ◽  
J. J. Grob ◽  
R. Stuck ◽  
S. Maillet ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon On Insulator ◽  
Oxygen Implantation

Low Dislocation Soi by Oxygen Implantation

1987 ◽  
Vol 107 ◽  
Author(s):  
A.H. Van Ommen
Keyword(s):  
High Temperature ◽  
Dislocation Density ◽  
Point Defects ◽  
Defect Density ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
High Temperature Annealing ◽  
High Quality ◽  
To Come ◽  
Sharp Interfaces

AbstractRecent results on silicon on insulator structures formed by implantation of oxygen and subsequent high temperature annealing will be discussed. The resulting silicon on insulator structure has sharp interfaces and a dislocation density of less than 105 cm -2 in the top silicon film. This density of defects is several orders of magnitude lower than previously reported values. The relation between the microstructure after implantation and this relatively low defect density will be discussed. Silicon point defects will be shown to play an important role in the establishment of the microstructure during implantation. Relations between implantation conditions, point defect concentrations and microstructure will be discussed to come to the formulation of the boundary conditions for the formation of high quality silicon on insulator material by this method.

Low-Defect, High-Quality Simox Produced By Multiple Oxygen Implantation with Substoichiometric Total Dose

1988 ◽  
Vol 128 ◽  
Author(s):  
F. Namavar ◽  
E. Cortesi ◽  
P. Sioshansi
Keyword(s):  
High Temperature ◽  
Total Dose ◽  
Threading Dislocation ◽  
High Temperature Annealing ◽  
High Quality ◽  
Oxygen Implantation ◽  
Buried Layer ◽  
Dislocation Defects ◽  
Silicon Islands ◽  
Plane View

ABSTRACTThis work addresses the formation of Separation by IMplantation of OXygen (SIMOX) structures by multiple oxygen implantation into silicon and high temperature annealing. We observed no threading dislocation defects in the several plane view TEM and XTEM micro graphs of each of the samples implanted with a single dose of up to 8 × 1017 0+/cm2. We also demonstrated that with a multiple low-dose (3 to 4 × 1017 0+/cm2) oxygen implantation and high temperature annealing process, we are able to produce continuous and uniform buried SiO2 layers with a total dose of 1.1 × 1018 0+/cm2 (about 60% of the total dose for standard SIMOX). The density of defects is about 105/cm2. There are no silicon islands in the buried layer, no SiO2 precipitates in the silicon top layer, and the Si-SiO2 interfaces are sharp and smooth. SIMOX material with a high-quality Si top layer and a continuous buried layer has been produced with a total dose of 7 × 1017 0+/cm2 (40% of the total dose for standard SIMOX) and a two-step process. However, in this case there are a few Si islands present in the buried SiO2 layer.

Evolution and Future Trends of SIMOX Material

MRS Bulletin ◽  
1998 ◽  
Vol 23 (12) ◽  
pp. 25-29 ◽  
Author(s):  
Steve Krause ◽  
Maria Anc ◽  
Peter Roitman
Keyword(s):  
High Temperature ◽  
Low Power ◽  
High Speed ◽  
New Technologies ◽  
Low Voltage ◽  
Semiconductor Industry ◽  
High Energy ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing

Oxygen-implanted silicon-on-insulator (SOI) material, or SIMOX (separation by implantation of oxygen), is another chapter in the continuing development of new material technologies for use by the semiconductor industry. Building integrated circuits (ICs) in a thin layer of crystalline silicon on a layer of silicon oxide on a silicon substrate has benefits for radiationhard, high-temperature, high-speed, low-voltage, and low-power operation, and for future device designs. Historically the first interest in SIMOX was for radiation-hard electronics for space, but the major application of interest currently is low-power, high-speed, portable electronics. Silicon-on-insulator also avoids the disadvantage of a completely different substrate such as sapphire or gallium arsenide. Formation of a buried-oxide (BOX) layer by high-energy, high-dose, oxygen ion implantation has the advantage that the ion-implant dose can be made extremely precise and extremely uniform. However the silicon and oxide layers are highly damaged after the implant, so high-temperature annealing sequences are required to restore devicequality material. In fact SIMOX process development necessitated the development of new technologies for high-dose implantation and high-temperature annealing.

Photoluminescence of Extended Defects in Silicon-on-Insulator Formed by Implantation of Oxygen

1995 ◽  
Vol 378 ◽  
Author(s):  
Y. H. Qian ◽  
J. H. Evans ◽  
L. F. Giles ◽  
A. Nejim ◽  
P. L. F. Hemment
Keyword(s):  
High Temperature ◽  
Optical Activity ◽  
Stacking Faults ◽  
Silicon On Insulator ◽  
Threading Dislocations ◽  
Extended Defects ◽  
High Temperature Annealing ◽  
Stacking Fault Tetrahedra ◽  
Before And After ◽  
Dislocation Related Luminescence

AbstractPL and TEM have been carried out on SIMOX structures before and after thinning the silicon overlayer by a process of sacrificial oxidation. The implantation and high temperature annealing schedules involved in fabricating SIMOX material result in threading dislocations and stacking fault tetrahedra and pyramidals in the silicon overlayer. The optical activity of these extended defects is found to be low. However, after the sacrificial oxidation, strong dislocation related luminescence is observed, which is attributed to the presence of oxidation-induced stacking faults now present in the overlayer.

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