Influence of oxygen implantation conditions on the properties of a high‐temperature‐annealed silicon‐on‐insulator material

1986 ◽  
Vol 49 (21) ◽  
pp. 1423-1425 ◽  
Author(s):  
A. Golanski ◽  
A. Perio ◽  
J. J. Grob ◽  
R. Stuck ◽  
S. Maillet ◽  
...  
Keyword(s):  
High Temperature ◽  
Silicon On Insulator ◽  
Oxygen Implantation

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

An Electrical Characterization of Sol Films Using Devices Formed by Oxygen Implant and Rapid Thermal Processing

1987 ◽  
Vol 92 ◽  
Author(s):  
Jim D. Whitfield ◽  
Marie E. Burnham ◽  
Charles J. Varker ◽  
Syd.R. Wilson
Keyword(s):  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
High Energy ◽  
Thermally Grown Oxide ◽  
Silicon On Insulator ◽  
Wafer Surface ◽  
High Dose ◽  
Active Device ◽  
Insulating Layer ◽  
Oxygen Implantation

The advantages of Silicon-on-Insulator (SO) devices over bulk Silicon devices are well known (speed, radiation hardened, packing density, latch up free CMOS,). In recent years, much effort has been made to form a thin, buried insulating layer just below the active device region. Several approaches are being developed to fabricate such a buried insulating layer. One viable approach is by high dose, high energy oxygen implantation directly into the silicon wafer surface (1-3). With proper implant and annealing conditions, a thin stoichiometric buried oxide with a good crystalline quality silicon overlayer can be formed on which an epitaxial layer can be grown and functional devices and circuits built. As SO1 circuits become market viable, mass production tools and techniques are being developed and evaluated. Of particular interest here is the evaluation of high current oxygen implantation with rapid thermal processing on the electrical characteristics of the oxide-silicon interfaces, the silicon overlayer and the thermally grown oxide on the top surface using measurements on gated diodes and guarded capacitors.

scholarly journals A UNIVERSAL SOI-BASED HIGH TEMPERATURE GATE DRIVER INTEGRATED CIRCUIT FOR SiC POWER SWITCHES WITH ON-CHIP SHORT CIRCUIT PROTECTION

2011 ◽  
Vol 20 (03) ◽  
pp. 471-484 ◽  
Author(s):  
LIANG ZUO ◽  
ROBERT GREENWELL ◽  
SYED K. ISLAM ◽  
M. A. HUQUE ◽  
BENJAMIN J. BLALOCK ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Integrated Circuit ◽  
Heat Sink ◽  
Low Cost ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Successful Operation ◽  
Power Switches ◽  
Gate Driver

In recent years, increasing demand for hybrid electric vehicles (HEVs) has generated the need for reliable and low-cost high-temperature electronics which can operate at the high temperatures under the hood of these vehicles. A high-voltage and high temperature gate-driver integrated circuit for SiC FET switches with short circuit protection has been designed and implemented in a 0.8-micron silicon-on-insulator (SOI) high-voltage process. The prototype chip has been successfully tested up to 200°C ambient temperature without any heat sink or cooling mechanism. This gate-driver chip can drive SiC power FETs of the DC-DC converters in a HEV, and future chip modifications will allow it to drive the SiC power FETs of the traction drive inverter. The converter modules along with the gate-driver chip will be placed very close to the engine where the temperature can reach up to 175ΰC. Successful operation of the chip at this temperature with or without minimal heat sink and without liquid cooling will help achieve greater power-to-volume as well as power-to-weight ratios for the power electronics module.

Robust True LDO Linear Voltage Regulator and Digitally Trimmable Buffered Precision Voltage Reference for High-Temperature, Low-Voltage Applications

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000096-000103
Author(s):  
Yoann Dusé ◽  
Fabien Laplace ◽  
Nicolas Joubert ◽  
Xavier Montmayeur ◽  
Noureddine Zitouni ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Coefficient ◽  
Low Voltage ◽  
Short Circuit ◽  
Silicon On Insulator ◽  
Voltage Regulator ◽  
Voltage Reference ◽  
Soft Start ◽  
Wide Range ◽  
Latch Up

We present in this paper two new products for high-temperature, low-voltage (2.8V to 5.5V) power management applications. The first product is an original implementation of a monolithic low dropout regulator (XTR70010), able to deliver up to 1A at 230°C with less than 1V of dropout. This new voltage regulator can source an output current level up to 1.5A. The regulated output voltage can be selected among 32 preset values from 0.5V to 3.6V in steps of 100mV, or it can be obtained with a pair of external resistors. The circuit integrates complex analog and digital control blocks providing state of the art features such as UVLO protection, chip enable control, soft start-up and soft shut-down, hiccup short-circuit protection, customer selectable thermal shut-down, input power supply protection, output overshoot remover and stability over an extremely wide range of load capacitances. The circuit offers a fair ±2% absolute accuracy and is guaranteed latch-up free. The second product is an advanced high-temperature, low-power, digitally trimmable voltage reference (XTR75020). Thanks to a custom, 1-wire serial interface, the absolute precision and the temperature coefficient can be adjusted in order to obtain an accuracy better than 0.5% with a temperature coefficient bellow ±20ppm/°C. On-chip OTP memory for trimming of absolute value and temperature coefficient makes the circuit extremely accurate and almost insensitive to drifts over time and temperature. The circuit features a class AB output buffer able to source or sink up to 5mA and remains stable with any load capacitance up to 50μF. The XTR75020 has nine preset possible output voltages. The source and sink short circuit current always remains bellow 25mA. The quiescent current consumption is 300μA typical at 230°C while the standby current is, in all cases, under 20μA. Both devices are designed on a latch-up free silicon-on-insulator process.

High Temperature (230 °C) Isolated Power Supply

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000283-000288 ◽  
Author(s):  
B. Reese ◽  
R. Shaw ◽  
J. Hornberger ◽  
R. Schupbach ◽  
A. Lostetter
Keyword(s):  
High Temperature ◽  
Power Supply ◽  
Single Layer ◽  
Thermal Design ◽  
Silicon On Insulator ◽  
Full Characterization ◽  
Soft Start ◽  
Power Switches ◽  
Layer Control

This paper discusses the development of a high temperature (i.e., 230 °C ambient) 100V–300V/15V 20W isolated power supply. The power supply is implemented using Silicon-Carbide (SiC) power switches, high-temperature silicon on insulator (HTSOI) control circuitry, as well as custom high temperature magnetics and packaging technology. The heart of this power supply is a custom-built PWM controller. The controller was built utilizing HTSOI component, which operate at temperatures as high as 300 °C. The developed power supply targets high ambient temperature environment applications and includes features such as housekeeping power supply, soft-start and under-voltage lockout. The power supply is packaged using a multi-chip module (MCM) packaging approach. A single layer power substrate and a multiple layer control substrate are used. Bare die devices are utilized to save space, reduce parasitic impedances, and increase temperature of operation and reliability. This paper provides details on the electrical and thermal design as well as fabrication and characterization of the power supply. Additionally, results of the full characterization of this power supply are provided; this includes temperature testing up to 230 °C, efficiency results, load transition behavior, output ripple, etc.

High Temperature Analog-to-Digital Converter Reliability Testing

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000245-000252 ◽  
Author(s):  
Bruce W. Ohme ◽  
Mark R. Larson
Keyword(s):  
High Temperature ◽  
Silicon On Insulator ◽  
Cmos Process ◽  
Reliability Testing ◽  
Test Results ◽  
Analog To Digital Converter ◽  
Digital Converter ◽  
Life Test ◽  
Analog To Digital ◽  
Post Stress

Initial test results have been previously reported for a high-temperature (225°C) 12-bit analog-to-digital converter (HTADC12) fabricated using a production high-temperature silicon-on-insulator (SOI) CMOS process and assembled in hermetically sealed ceramic packages (ref. 1). Reliability test results for the HTADC12 are presented including parametric and functional test results from 1500 hours of dynamic life test at 250°C as well 1000 temperature cycles from −65°C to 200°C. Results of post-stress wirebond, and die bond testing are also provided.

High Temperature Endurance of Packaged SOI Devices for Signal Conditioning and Processing Applications

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000251-000254
Author(s):  
S T Riches ◽  
C Johnston ◽  
M Sousa ◽  
P Grant
Keyword(s):  
High Temperature ◽  
Electronic Materials ◽  
Silicon On Insulator ◽  
Electrical Performance ◽  
Research Centre ◽  
Signal Conditioning ◽  
Reliability Data ◽  
Die Attach ◽  
Soi Devices ◽  
Formed Part

Silicon on Insulator (SOI) device technology is fulfilling a niche requirement for electronics that functions satisfactorily at operating temperatures of >200°C. Most of the reliability data on the high temperature endurance of the devices is generated on the device itself with little attention being paid to the packaging technology around the device. Similarly, most of the reliability data generated on high temperature packaging technologies uses testpieces rather than real devices, which restricts any conclusions on long term electrical performance. This paper presents results of high temperature endurance studies on SOI devices combined with high temperature packaging technologies relevant to signal conditioning and processing functions for sensors in down-well and aero-engine applications. The endurance studies have been carried out for up to 7,056 hours at 250°C, with functioning devices being tested periodically at room temperature, 125°C and 250°C. Different die attach and wire bond options have been included in the study and the performance of multiplexers, transistors, bandgap voltage, oscillators and voltage regulators functional blocks have been characterised. This work formed part of the UPTEMP project which was set-up with support from UK Technology Strategy Board and the EPSRC. The project brought together a consortium of end-users (Sondex Wireline and Vibro-Meter UK), electronic module manufacturers (GE Aviation Systems Newmarket) and material suppliers (Gwent Electronic Materials and Thermastrate Ltd) with Oxford University-Materials Department, the leading UK high temperature electronics research centre.

High Temperature Reliability Investigations up to 350 °C of Gate Oxide Capacitors realized in a Silicon-on-Insulator CMOS-Technology

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000116-000121
Author(s):  
K. Grella ◽  
S. Dreiner ◽  
H. Vogt ◽  
U. Paschen
Keyword(s):  
High Temperature ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Cmos Process ◽  
Oxide Breakdown ◽  
Time Dependent Dielectric Breakdown ◽  
Single Poly Eeprom

Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. With Silicon-on-Insulator-technologies (SOI), digital and analog circuitry is possible up to 250 °C and even more, but performance and reliability are strongly affected at these high temperatures. One of the main critical factors is the gate oxide quality and its reliability. In this paper, we present a study of gate oxide capacitor time-dependent dielectric breakdown (TDDB) measurements at temperatures up to 350 °C. The experiments were carried out on gate oxide capacitor structures which were realized in the Fraunhofer 1.0 μm SOI-CMOS process. This technology is based on 200 mm wafers and features, among others, three layers of tungsten metallization with excellent reliability concerning electromigration, voltage independent capacitors, high resistance resistors, and single-poly-EEPROM cells. The gate oxide thickness is 40 nm. Using the data of the TDDB-measurements, the behavior of field and temperature acceleration parameters at temperatures up to 350 °C was evaluated. For a more detailed investigation, the current evolution in time was also studied. An analysis of the oxide breakdown conditions, in particular the field and temperature dependence of the charge to breakdown and the current just before breakdown, completes the study. The presented data provide important information about accelerated oxide reliability testing beyond 250 °C, and make it possible to quickly evaluate the reliability of high temperature CMOS-technologies at use-temperature.

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