scholarly journals Effect of High‐Temperature Annealing on Deep Levels in Thin Silicon‐on‐Insulator Layers Separated by Implanted Oxygen

1999 ◽  
Vol 146 (9) ◽  
pp. 3489-3493 ◽  
Author(s):  
B. K. Kang ◽  
H. S. Kang ◽  
C. G. Ahn ◽  
Y. K. Kwon
Keyword(s):  
High Temperature ◽  
Deep Levels ◽  
Silicon On Insulator ◽  
High Temperature Annealing ◽  
Thin Silicon ◽  
Insulator Layers

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 371-374 ◽  
Author(s):  
Andreas Gällström ◽  
Björn Magnusson ◽  
Patrick Carlsson ◽  
Nguyen Tien Son ◽  
Anne Henry ◽  
...  
Keyword(s):  
High Temperature ◽  
Cooling Rate ◽  
High Purity ◽  
Room Temperature ◽  
Deep Levels ◽  
High Temperature Annealing ◽  
Cooling Rates ◽  
Silicon Vacancy

The influence of different cooling rates on deep levels in 4H-SiC after high temperature annealing has been investigated. The samples were heated from room temperature to 2300°C, followed by a 20 minutes anneal at this temperature. Different subsequent cooling sequences down to 1100°C were used. The samples have been investigated using photoluminescence (PL) and IV characteristics. The PL intensities of the silicon vacancy (VSi) and UD-2, were found to increase with a faster cooling rate.

Crystallinity estimation of thin silicon-on-insulator layers by means of diffractometry using a highly parallel X-ray microbeam

2006 ◽  
Vol 13 (5) ◽  
pp. 373-377 ◽  
Author(s):  
Shingo Takeda ◽  
Kazushi Yokoyama ◽  
Yoshiyuki Tsusaka ◽  
Yasushi Kagoshima ◽  
Junji Matsui ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
X Ray ◽  
Thin Silicon ◽  
Insulator Layers

Process-Induced Defects in High-Purity GaAs

1982 ◽  
Vol 14 ◽  
Author(s):  
P. H. Campbell ◽  
O. Aina ◽  
B. J. Baliga ◽  
R. Ehle
Keyword(s):  
High Temperature ◽  
High Purity ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Schottky Contacts ◽  
High Temperature Annealing ◽  
Order Of Magnitude ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTHigh temperature annealing of Si 3 N4 and SiO2 capped high purity LPE GaAs is shown to result in a reduction in the surface carrier concentration by about an order of magnitude. Au Schottky contacts made on the annealed samples were found to have severely degraded breakdown characteristics. Using deep level transient spectroscopy, deep levels at EC–.58eV, EC–.785eV were detected in the SiO2, capped samples and EC–.62eV, EC–.728eV in the Si3N4 capped Samples while none was detected in the unannealed samples.The electrical degradations are explained in terms of compensation mechanisns and depletion layer recombination-generation currents due to the deep levels.

High-Quality SOI by Oxygen Implantation into Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
A. H. van Ommen ◽  
H. J. Ligthart ◽  
J. Politiek ◽  
M. P. A. Viegers
Keyword(s):  
High Temperature ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Quality ◽  
Cubic Symmetry ◽  
Buried Oxide ◽  
Simple Cubic ◽  
Precipitate Growth

ABSTRACTHigh quality Silicon-On-Insulator, with a dislocation density lower than 105cm−2, has been formed by high temperature annealing of high-dose oxygen implanted silicon. In the as-implanted state, oxygen was found to form precipitates in the top silicon film. In the upper region these precipitates were found to order into a superlattice of simple cubic symmetry. Near the interface with the buried oxide film the precipitates are larger and no ordering occurs in that region. Contrary to implants without precipitate ordering where dislocations are observed across the entire layer thickness of the top silicon film, dislocations are now only found near the buried oxide. The precipitate ordering appears to prevent the dislocations to climb to the surface. High temperature annealing results in precipitate growth in this region whereas they dissolve elsewhere. These growing precipitates pin the dislocations and elimination of precipitates and dislocations occurs simultaneously, resulting in good quality SOI material.

Modeling the splitting of thin silicon films from porosified crystalline silicon upon high temperature annealing in hydrogen

2012 ◽  
Vol 9 (10-11) ◽  
pp. 2194-2197 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Yaser Abdul Raheem ◽  
Abdul Azeez Alomar ◽  
Jef Poortmans
Keyword(s):  
High Temperature ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
High Temperature Annealing ◽  
Thin Silicon
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