Measurement of carrier lifetime, effective recombination velocity, and diffusion length near the grain boundary using the time‐dependent electron‐beam‐induced current

A. Romanowski; D. B. Wittry

doi:10.1063/1.337077

Measurement of carrier lifetime, effective recombination velocity, and diffusion length near the grain boundary using the time‐dependent electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.337077 ◽

1986 ◽

Vol 60 (8) ◽

pp. 2910-2913 ◽

Cited By ~ 4

Author(s):

A. Romanowski ◽

D. B. Wittry

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Carrier Lifetime ◽

Diffusion Length ◽

Time Dependent ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity ◽

And Diffusion

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Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron‐beam‐induced current and its derivative: Determination of diffusion lengths in the low micron and submicron ranges

Journal of Applied Physics ◽

10.1063/1.334382 ◽

1985 ◽

Vol 57 (6) ◽

pp. 1978-1984 ◽

Cited By ~ 55

Author(s):

Keung L. Luke ◽

Oldwig von Roos ◽

Li‐jen Cheng

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity ◽

And Diffusion

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Denuded zone and diffusion length investigation by electron beam induced current technique in intrinsically gettered Czochralski silicon

Journal of Applied Physics ◽

10.1063/1.369271 ◽

1999 ◽

Vol 85 (3) ◽

pp. 1395-1400

Author(s):

S. Spiga ◽

A. Castaldini ◽

A. Cavallini ◽

M. L. Polignano ◽

F. Cazzaniga

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Induced Current ◽

Czochralski Silicon ◽

Current Technique ◽

Electron Beam Induced Current ◽

And Diffusion

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Evaluation of diffusion length and surface‐recombination velocity from a planar‐collector‐geometry electron‐beam‐induced current scan

Journal of Applied Physics ◽

10.1063/1.334400 ◽

1985 ◽

Vol 57 (6) ◽

pp. 2077-2090 ◽

Cited By ~ 56

Author(s):

H. K. Kuiken ◽

C. van Opdorp

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity

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Analysis of Electron Beam Induced Current Considering Sample Dimensions–Measurement of Diffusion Length and Surface Recombination Velocity–

Japanese Journal of Applied Physics ◽

10.1143/jjap.20.745 ◽

1981 ◽

Vol 20 (4) ◽

pp. 745-751 ◽

Cited By ~ 13

Author(s):

Takashi Fuyuki ◽

Hiroyuki Matsunami

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity

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Determination of surface recombination velocity at a grain boundary using electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.331726 ◽

1983 ◽

Vol 54 (1) ◽

pp. 169-173 ◽

Cited By ~ 21

Author(s):

D. E. Burk ◽

S. Kanner ◽

J. E. Muyshondt ◽

D. S. Shaulis ◽

P. E. Russell

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity

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Determination of grain‐boundary parameters of polycrystalline silicon by ac electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.341238 ◽

1988 ◽

Vol 64 (9) ◽

pp. 4601-4608 ◽

Cited By ~ 1

Author(s):

A. Romanowski ◽

D. B. Wittry

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Polycrystalline Silicon ◽

Induced Current ◽

Electron Beam Induced Current

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A unified description of two voltage‐varying methods for evaluating surface recombination velocity from electron‐beam‐induced current: Application to normal‐ and planar‐collector configurations

Journal of Applied Physics ◽

10.1063/1.361247 ◽

1996 ◽

Vol 79 (6) ◽

pp. 3058-3070 ◽

Cited By ~ 4

Author(s):

Keung L. Luke

Keyword(s):

Electron Beam ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Current Application ◽

Electron Beam Induced Current ◽

Recombination Velocity ◽

Unified Description

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Extracting diffusion length using the single contact electron beam induced current technique

Solid-State Electronics ◽

10.1016/s0038-1101(00)00113-1 ◽

2000 ◽

Vol 44 (9) ◽

pp. 1585-1590 ◽

Cited By ~ 3

Author(s):

Vincent K.S Ong ◽

Dethau Wu

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Induced Current ◽

Current Technique ◽

Electron Beam Induced Current ◽

Single Contact

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Determination of lifetime and diffusion constant of minority carriers by a phase‐shift technique using an electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.329116 ◽

1981 ◽

Vol 52 (5) ◽

pp. 3428-3432 ◽

Cited By ~ 16

Author(s):

T. Fuyuki ◽

H. Matsunami

Keyword(s):

Electron Beam ◽

Phase Shift ◽

Diffusion Constant ◽

Induced Current ◽

Electron Beam Induced Current ◽

Shift Technique ◽

And Diffusion ◽

Minority Carriers

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Direct Characterization of Grain-Boundary Electrical Activity in Doped (Ba0.6Sr0.4)TiO3by Combined Imaging of Electron-Beam-Induced Current and Electron-Backscattered Diffraction

Journal of the American Ceramic Society ◽

10.1111/j.1551-2916.2004.01153.x ◽

2004 ◽

Vol 87 (6) ◽

pp. 1153-1156 ◽

Cited By ~ 4

Author(s):

Katsuro Hayashi ◽

Takahisa Yamamoto ◽

Yuichi Ikuhara ◽

Taketo Sakuma

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Electrical Activity ◽

Induced Current ◽

Electron Backscattered Diffraction ◽

Electron Beam Induced Current ◽

Combined Imaging

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