Determination of grain‐boundary parameters of polycrystalline silicon by ac electron‐beam‐induced current

A. Romanowski; D. B. Wittry

doi:10.1063/1.341238

Determination of grain‐boundary parameters of polycrystalline silicon by ac electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.341238 ◽

1988 ◽

Vol 64 (9) ◽

pp. 4601-4608 ◽

Cited By ~ 1

Author(s):

A. Romanowski ◽

D. B. Wittry

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Polycrystalline Silicon ◽

Induced Current ◽

Electron Beam Induced Current

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Determination of surface recombination velocity at a grain boundary using electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.331726 ◽

1983 ◽

Vol 54 (1) ◽

pp. 169-173 ◽

Cited By ~ 21

Author(s):

D. E. Burk ◽

S. Kanner ◽

J. E. Muyshondt ◽

D. S. Shaulis ◽

P. E. Russell

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity

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Determination of lifetime and diffusion constant of minority carriers by a phase‐shift technique using an electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.329116 ◽

1981 ◽

Vol 52 (5) ◽

pp. 3428-3432 ◽

Cited By ~ 16

Author(s):

T. Fuyuki ◽

H. Matsunami

Keyword(s):

Electron Beam ◽

Phase Shift ◽

Diffusion Constant ◽

Induced Current ◽

Electron Beam Induced Current ◽

Shift Technique ◽

And Diffusion ◽

Minority Carriers

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Direct Characterization of Grain-Boundary Electrical Activity in Doped (Ba0.6Sr0.4)TiO3by Combined Imaging of Electron-Beam-Induced Current and Electron-Backscattered Diffraction

Journal of the American Ceramic Society ◽

10.1111/j.1551-2916.2004.01153.x ◽

2004 ◽

Vol 87 (6) ◽

pp. 1153-1156 ◽

Cited By ~ 4

Author(s):

Katsuro Hayashi ◽

Takahisa Yamamoto ◽

Yuichi Ikuhara ◽

Taketo Sakuma

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Electrical Activity ◽

Induced Current ◽

Electron Backscattered Diffraction ◽

Electron Beam Induced Current ◽

Combined Imaging

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Development of Electron Beam Induced Current for diffusion length determination of VLWIR HgCdTe and MWIR T2SL based photodetectors

Infrared Physics & Technology ◽

10.1016/j.infrared.2018.10.005 ◽

2018 ◽

Vol 95 ◽

pp. 170-176 ◽

Cited By ~ 1

Author(s):

A. Yèche ◽

F. Boulard ◽

C. Cervera ◽

J.P. Perez ◽

J.B. Rodriguez ◽

...

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Induced Current ◽

Length Determination ◽

Electron Beam Induced Current ◽

Vlwir Hgcdte

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Determination of the minority carrier diffusion length in compositionally graded Cu(In,Ga)Se2 solar cells using electron beam induced current

Applied Physics Letters ◽

10.1063/1.3291046 ◽

2010 ◽

Vol 96 (2) ◽

pp. 022104 ◽

Cited By ~ 49

Author(s):

Gregory Brown ◽

Vladimir Faifer ◽

Alex Pudov ◽

Sergey Anikeev ◽

Eugene Bykov ◽

...

Keyword(s):

Electron Beam ◽

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

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Local investigation of recombination at grain boundaries in silicon by grain boundary‐electron beam induced current

Journal of Applied Physics ◽

10.1063/1.354917 ◽

1993 ◽

Vol 74 (2) ◽

pp. 1169-1178 ◽

Cited By ~ 33

Author(s):

J. Palm

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Grain Boundaries ◽

Induced Current ◽

Electron Beam Induced Current

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Determination of the band‐edge offset in heterojunctions by electron beam induced current (GaAs/GaAlAs)

Applied Physics Letters ◽

10.1063/1.97787 ◽

1987 ◽

Vol 50 (22) ◽

pp. 1583-1585 ◽

Cited By ~ 15

Author(s):

A. Eisenbeiss ◽

H. Heinrich ◽

J. Opschoor ◽

R. P. Tijburg ◽

H. Preier

Keyword(s):

Electron Beam ◽

Band Edge ◽

Induced Current ◽

Electron Beam Induced Current

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Electron-beam-induced current characterization of polycrystalline silicon solar cells

Solar Cells ◽

10.1016/0379-6787(80)90040-x ◽

1980 ◽

Vol 1 (2) ◽

pp. 123-139 ◽

Cited By ~ 22

Author(s):

J.I. Hanoka

Keyword(s):

Electron Beam ◽

Solar Cells ◽

Polycrystalline Silicon ◽

Silicon Solar Cells ◽

Induced Current ◽

Electron Beam Induced Current

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Cross‐sectional transmission electron microscopy/electron beam induced current investigations on as‐grown and hydrogen‐passivated, gas‐assisted solidified polycrystalline silicon

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.576139 ◽

1989 ◽

Vol 7 (6) ◽

pp. 3295-3300

Author(s):

C. H. Chu ◽

C. Y. Sun ◽

H. L. Hwang

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Electron Beam ◽

Polycrystalline Silicon ◽

Induced Current ◽

Cross Sectional ◽

Transmission Electron ◽

Electron Beam Induced Current

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Determination of minority‐carrier diffusion length by integral properties of electron‐beam‐induced current profiles

Journal of Applied Physics ◽

10.1063/1.349454 ◽

1991 ◽

Vol 70 (4) ◽

pp. 2163-2168 ◽

Cited By ~ 12

Author(s):

D. Cavalcoli ◽

A. Cavallini ◽

A. Castaldini

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

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