Determination of lifetime and diffusion constant of minority carriers by a phase‐shift technique using an electron‐beam‐induced current

T. Fuyuki; H. Matsunami

doi:10.1063/1.329116

Determination of lifetime and diffusion constant of minority carriers by a phase‐shift technique using an electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.329116 ◽

1981 ◽

Vol 52 (5) ◽

pp. 3428-3432 ◽

Cited By ~ 16

Author(s):

T. Fuyuki ◽

H. Matsunami

Keyword(s):

Electron Beam ◽

Phase Shift ◽

Diffusion Constant ◽

Induced Current ◽

Electron Beam Induced Current ◽

Shift Technique ◽

And Diffusion ◽

Minority Carriers

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Measurement of lifetime and diffusion constant of minority carriers by phase shift technique in EBIC

Electronics and Communications in Japan (Part I Communications) ◽

10.1002/ecja.4400631211 ◽

1980 ◽

Vol 63 (12) ◽

pp. 81-86

Author(s):

Takahashi Fuyuki ◽

Hiroyuki Matsunamis

Keyword(s):

Phase Shift ◽

Diffusion Constant ◽

Shift Technique ◽

And Diffusion ◽

Minority Carriers

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Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron‐beam‐induced current and its derivative: Determination of diffusion lengths in the low micron and submicron ranges

Journal of Applied Physics ◽

10.1063/1.334382 ◽

1985 ◽

Vol 57 (6) ◽

pp. 1978-1984 ◽

Cited By ~ 55

Author(s):

Keung L. Luke ◽

Oldwig von Roos ◽

Li‐jen Cheng

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity ◽

And Diffusion

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Determination of grain‐boundary parameters of polycrystalline silicon by ac electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.341238 ◽

1988 ◽

Vol 64 (9) ◽

pp. 4601-4608 ◽

Cited By ~ 1

Author(s):

A. Romanowski ◽

D. B. Wittry

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Polycrystalline Silicon ◽

Induced Current ◽

Electron Beam Induced Current

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Development of Electron Beam Induced Current for diffusion length determination of VLWIR HgCdTe and MWIR T2SL based photodetectors

Infrared Physics & Technology ◽

10.1016/j.infrared.2018.10.005 ◽

2018 ◽

Vol 95 ◽

pp. 170-176 ◽

Cited By ~ 1

Author(s):

A. Yèche ◽

F. Boulard ◽

C. Cervera ◽

J.P. Perez ◽

J.B. Rodriguez ◽

...

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Induced Current ◽

Length Determination ◽

Electron Beam Induced Current ◽

Vlwir Hgcdte

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Denuded zone and diffusion length investigation by electron beam induced current technique in intrinsically gettered Czochralski silicon

Journal of Applied Physics ◽

10.1063/1.369271 ◽

1999 ◽

Vol 85 (3) ◽

pp. 1395-1400

Author(s):

S. Spiga ◽

A. Castaldini ◽

A. Cavallini ◽

M. L. Polignano ◽

F. Cazzaniga

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Induced Current ◽

Czochralski Silicon ◽

Current Technique ◽

Electron Beam Induced Current ◽

And Diffusion

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Determination of the minority carrier diffusion length in compositionally graded Cu(In,Ga)Se2 solar cells using electron beam induced current

Applied Physics Letters ◽

10.1063/1.3291046 ◽

2010 ◽

Vol 96 (2) ◽

pp. 022104 ◽

Cited By ~ 49

Author(s):

Gregory Brown ◽

Vladimir Faifer ◽

Alex Pudov ◽

Sergey Anikeev ◽

Eugene Bykov ◽

...

Keyword(s):

Electron Beam ◽

Solar Cells ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

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Determination of the band‐edge offset in heterojunctions by electron beam induced current (GaAs/GaAlAs)

Applied Physics Letters ◽

10.1063/1.97787 ◽

1987 ◽

Vol 50 (22) ◽

pp. 1583-1585 ◽

Cited By ~ 15

Author(s):

A. Eisenbeiss ◽

H. Heinrich ◽

J. Opschoor ◽

R. P. Tijburg ◽

H. Preier

Keyword(s):

Electron Beam ◽

Band Edge ◽

Induced Current ◽

Electron Beam Induced Current

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Determination of surface recombination velocity at a grain boundary using electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.331726 ◽

1983 ◽

Vol 54 (1) ◽

pp. 169-173 ◽

Cited By ~ 21

Author(s):

D. E. Burk ◽

S. Kanner ◽

J. E. Muyshondt ◽

D. S. Shaulis ◽

P. E. Russell

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity

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Determination of minority‐carrier diffusion length by integral properties of electron‐beam‐induced current profiles

Journal of Applied Physics ◽

10.1063/1.349454 ◽

1991 ◽

Vol 70 (4) ◽

pp. 2163-2168 ◽

Cited By ~ 12

Author(s):

D. Cavalcoli ◽

A. Cavallini ◽

A. Castaldini

Keyword(s):

Electron Beam ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

Electron Beam Induced Current

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Determination of semiconductor parameters by electron beam induced current and cathodoluminescence measurements

phys stat sol (a) ◽

10.1002/pssa.2211090128 ◽

1988 ◽

Vol 109 (1) ◽

pp. 261-272 ◽

Cited By ~ 7

Author(s):

F. Koch ◽

W. Hergert ◽

G. Oelgart ◽

N. Puhlmann

Keyword(s):

Electron Beam ◽

Induced Current ◽

Electron Beam Induced Current

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