Evaluation of diffusion length and surface‐recombination velocity from a planar‐collector‐geometry electron‐beam‐induced current scan

H. K. Kuiken; C. van Opdorp

doi:10.1063/1.334400

Evaluation of diffusion length and surface‐recombination velocity from a planar‐collector‐geometry electron‐beam‐induced current scan

Journal of Applied Physics ◽

10.1063/1.334400 ◽

1985 ◽

Vol 57 (6) ◽

pp. 2077-2090 ◽

Cited By ~ 56

Author(s):

H. K. Kuiken ◽

C. van Opdorp

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity

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Analysis of Electron Beam Induced Current Considering Sample Dimensions–Measurement of Diffusion Length and Surface Recombination Velocity–

Japanese Journal of Applied Physics ◽

10.1143/jjap.20.745 ◽

1981 ◽

Vol 20 (4) ◽

pp. 745-751 ◽

Cited By ~ 13

Author(s):

Takashi Fuyuki ◽

Hiroyuki Matsunami

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity

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Quantification of the effects of generation volume, surface recombination velocity, and diffusion length on the electron‐beam‐induced current and its derivative: Determination of diffusion lengths in the low micron and submicron ranges

Journal of Applied Physics ◽

10.1063/1.334382 ◽

1985 ◽

Vol 57 (6) ◽

pp. 1978-1984 ◽

Cited By ~ 55

Author(s):

Keung L. Luke ◽

Oldwig von Roos ◽

Li‐jen Cheng

Keyword(s):

Electron Beam ◽

Diffusion Length ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity ◽

And Diffusion

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A unified description of two voltage‐varying methods for evaluating surface recombination velocity from electron‐beam‐induced current: Application to normal‐ and planar‐collector configurations

Journal of Applied Physics ◽

10.1063/1.361247 ◽

1996 ◽

Vol 79 (6) ◽

pp. 3058-3070 ◽

Cited By ~ 4

Author(s):

Keung L. Luke

Keyword(s):

Electron Beam ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Current Application ◽

Electron Beam Induced Current ◽

Recombination Velocity ◽

Unified Description

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Electron‐beam‐induced current determination of minority‐carrier diffusion length and surface recombination velocity in mercury‐cadmium‐telluride

Journal of Applied Physics ◽

10.1063/1.335225 ◽

1985 ◽

Vol 57 (8) ◽

pp. 2886-2891 ◽

Cited By ~ 9

Author(s):

B. E. Artz

Keyword(s):

Mercury Cadmium Telluride ◽

Minority Carrier ◽

Diffusion Length ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

Electron Beam Induced Current ◽

Recombination Velocity

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Surface recombination velocity effects on simulated electron beam induced current collected by a nanoscale electrode

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.11.020 ◽

2016 ◽

Vol 100 ◽

pp. 1296-1300 ◽

Cited By ~ 2

Author(s):

Quang-Tri Doan ◽

Abdelhamid Hamdouni ◽

Abdelillah El Hdiy

Keyword(s):

Electron Beam ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity

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A direct method of extracting surface recombination velocity from an electron beam induced current line scan

Review of Scientific Instruments ◽

10.1063/1.1148846 ◽

1998 ◽

Vol 69 (4) ◽

pp. 1814-1816 ◽

Cited By ~ 13

Author(s):

Vincent K. S. Ong

Keyword(s):

Electron Beam ◽

Direct Method ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Current Line ◽

Line Scan ◽

Electron Beam Induced Current ◽

Recombination Velocity ◽

A Direct Method

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Determination of surface recombination velocity at a grain boundary using electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.331726 ◽

1983 ◽

Vol 54 (1) ◽

pp. 169-173 ◽

Cited By ~ 21

Author(s):

D. E. Burk ◽

S. Kanner ◽

J. E. Muyshondt ◽

D. S. Shaulis ◽

P. E. Russell

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity

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Extraction of Surface Recombination Velocity at Highly Doped Silicon Surfaces Using Electron-Beam-Induced Current

IEEE Journal of Photovoltaics ◽

10.1109/jphotov.2014.2361025 ◽

2015 ◽

Vol 5 (1) ◽

pp. 263-268 ◽

Cited By ~ 6

Author(s):

Lei Meng ◽

Fa-Jun Ma ◽

Johnson Wong ◽

Bram Hoex ◽

Charanjit S. Bhatia

Keyword(s):

Electron Beam ◽

Surface Recombination ◽

Silicon Surfaces ◽

Surface Recombination Velocity ◽

Induced Current ◽

Doped Silicon ◽

Electron Beam Induced Current ◽

Recombination Velocity

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The evaluation of surface recombination velocity from normal‐collector geometry electron‐beam‐induced current line scans

Journal of Applied Physics ◽

10.1063/1.356402 ◽

1994 ◽

Vol 75 (3) ◽

pp. 1623-1631 ◽

Cited By ~ 8

Author(s):

Keung L. Luke

Keyword(s):

Electron Beam ◽

Surface Recombination ◽

Surface Recombination Velocity ◽

Induced Current ◽

Current Line ◽

Electron Beam Induced Current ◽

Recombination Velocity

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Measurement of carrier lifetime, effective recombination velocity, and diffusion length near the grain boundary using the time‐dependent electron‐beam‐induced current

Journal of Applied Physics ◽

10.1063/1.337077 ◽

1986 ◽

Vol 60 (8) ◽

pp. 2910-2913 ◽

Cited By ~ 4

Author(s):

A. Romanowski ◽

D. B. Wittry

Keyword(s):

Electron Beam ◽

Grain Boundary ◽

Carrier Lifetime ◽

Diffusion Length ◽

Time Dependent ◽

Induced Current ◽

Electron Beam Induced Current ◽

Recombination Velocity ◽

And Diffusion

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