Denuded zone and diffusion length investigation by electron beam induced current technique in intrinsically gettered Czochralski silicon

1999 ◽  
Vol 85 (3) ◽  
pp. 1395-1400
Author(s):  
S. Spiga ◽  
A. Castaldini ◽  
A. Cavallini ◽  
M. L. Polignano ◽  
F. Cazzaniga
Keyword(s):  
Electron Beam ◽  
Diffusion Length ◽  
Induced Current ◽  
Czochralski Silicon ◽  
Current Technique ◽  
Electron Beam Induced Current ◽  
And Diffusion

Recombination Processes in 4H-SiC pn Structures

2016 ◽  
Vol 858 ◽  
pp. 345-348 ◽  
Author(s):  
Anatoly M. Strel'chuk ◽  
Baptiste Berenguier ◽  
Eugene B. Yakimov ◽  
Laurent Ottaviani
Keyword(s):  
Electron Beam ◽  
Room Temperature ◽  
Diffusion Length ◽  
Induced Current ◽  
Donor Concentration ◽  
Reverse Voltage ◽  
Recombination Processes ◽  
Electron Beam Induced Current ◽  
Switching Characteristics ◽  
Hole Diffusion Length

Commercial 4H-SiC p+n structures with an uncompensated donor concentration (Nd-Na) of ~1.5∙1015 cm-3 in the n-type epitaxial layer are studied. The measurement of the photocurrent, electron beam induced current and transient switching characteristics (from forward to reverse voltage), altogether showed that the value of the hole diffusion length, about 2 μm at room temperature, increases to at least 7 μm at 620 K.

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