Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors

doi:10.1063/1.3231924

Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.3231924 ◽

2009 ◽

Vol 95 (12) ◽

pp. 123508 ◽

Cited By ~ 1

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Noise ◽

Frequency Channel

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Selectively silicided vertical power double-diffused metal–oxide semiconductor field effect transistors for high-frequency power switching applications

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584170 ◽

1988 ◽

Vol 6 (6) ◽

pp. 1740 ◽

Cited By ~ 3

Author(s):

K. Shenai

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Frequency Power ◽

Power Switching ◽

Frequency Power

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Assessment of hot‐hole‐induced interface states and trapped carriers in submicronn(metal–oxide semiconductor field effect transistors) by gate‐to‐drain capacitance measurement

Applied Physics Letters ◽

10.1063/1.112121 ◽

1994 ◽

Vol 65 (9) ◽

pp. 1139-1141 ◽

Cited By ~ 2

Author(s):

R. Ghodsi ◽

Y. T. Yeow ◽

M. K. Alam

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Capacitance Measurement

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Three-dimensional simulations of ultrasmall metal–oxide–semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics

Journal of Applied Physics ◽

10.1063/1.1453510 ◽

2002 ◽

Vol 91 (6) ◽

pp. 3737-3740 ◽

Cited By ~ 21

Author(s):

W. J. Gross ◽

D. Vasileska ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Three Dimensional Simulations

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High-frequency noise in nanoscale metal oxide semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.2740345 ◽

2007 ◽

Vol 101 (12) ◽

pp. 124501 ◽

Cited By ~ 22

Author(s):

Reza Navid ◽

Christoph Jungemann ◽

Thomas H. Lee ◽

Robert W. Dutton

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

High Frequency Noise

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High frequency and noise model of gate-all-around metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.3093884 ◽

2009 ◽

Vol 105 (7) ◽

pp. 074505 ◽

Cited By ~ 6

Author(s):

B. Nae ◽

A. Lazaro ◽

B. Iniguez

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Noise Model

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The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2210627 ◽

2006 ◽

Vol 100 (1) ◽

pp. 014504 ◽

Cited By ~ 38

Author(s):

B. Mereu ◽

C. Rossel ◽

E. P. Gusev ◽

M. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal–Oxide–Semiconductor Structures

Semiconductors ◽

10.1134/s1063782618020203 ◽

2018 ◽

Vol 52 (2) ◽

pp. 242-247 ◽

Cited By ~ 1

Author(s):

S. E. Tyaginov ◽

A. A. Makarov ◽

M. Jech ◽

M. I. Vexler ◽

J. Franco ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Charge Carriers ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Self Consistent ◽

Physical Principles

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On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

Journal of Applied Physics ◽

10.1063/1.3669490 ◽

2011 ◽

Vol 110 (12) ◽

pp. 124503 ◽

Cited By ~ 2

Author(s):

S. M. Thomas ◽

M. J. Prest ◽

T. E. Whall ◽

D. R. Leadley ◽

P. Toniutti ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Hafnium Silicate

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Modeling of Degradation Effects on the High Frequency Noise of Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.38 ◽

2005 ◽

Vol 44 (1A) ◽

pp. 38-43 ◽

Cited By ~ 4

Author(s):

Heng-Fa Teng ◽

S.-L. Jang ◽

M.-H. Juang

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

High Frequency Noise

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Post‐irradiation cracking of H2and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.353348 ◽

1993 ◽

Vol 73 (2) ◽

pp. 658-667 ◽

Cited By ~ 148

Author(s):

R. E. Stahlbush ◽

A. H. Edwards ◽

D. L. Griscom ◽

B. J. Mrstik

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Post Irradiation

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