On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

S. M. Thomas; M. J. Prest; T. E. Whall; D. R. Leadley; P. Toniutti; F. Conzatti; D. Esseni; L. Donetti; F. Gámiz; R. J. P. Lander; G. Vellianitis; P.-E. Hellström; M. Östling

doi:10.1063/1.3669490

On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

Journal of Applied Physics ◽

10.1063/1.3669490 ◽

2011 ◽

Vol 110 (12) ◽

pp. 124503 ◽

Cited By ~ 2

Author(s):

S. M. Thomas ◽

M. J. Prest ◽

T. E. Whall ◽

D. R. Leadley ◽

P. Toniutti ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Hafnium Silicate

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Three-dimensional simulations of ultrasmall metal–oxide–semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics

Journal of Applied Physics ◽

10.1063/1.1453510 ◽

2002 ◽

Vol 91 (6) ◽

pp. 3737-3740 ◽

Cited By ~ 21

Author(s):

W. J. Gross ◽

D. Vasileska ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Three Dimensional Simulations

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Experimental Evaluation of Coulomb-Scattering-Limited Inversion-Layer Mobility of n-type Metal–Oxide–Semiconductor Field-Effect Transistors on Si(100), (110), and (111)-Surfaces: Impact of Correlation between Conductivity Mass and Normal Mass

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04dc21 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DC21 ◽

Cited By ~ 2

Author(s):

Yukio Nakabayashi ◽

Takamitsu Ishihara ◽

Toshinori Numata ◽

Ken Uchida ◽

Shinichi Takagi

Keyword(s):

Metal Oxide ◽

Experimental Evaluation ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Normal Mass

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The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2210627 ◽

2006 ◽

Vol 100 (1) ◽

pp. 014504 ◽

Cited By ~ 38

Author(s):

B. Mereu ◽

C. Rossel ◽

E. P. Gusev ◽

M. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.3231924 ◽

2009 ◽

Vol 95 (12) ◽

pp. 123508 ◽

Cited By ~ 1

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Noise ◽

Frequency Channel

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Coulomb scattering in high-κ gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.2975993 ◽

2008 ◽

Vol 104 (6) ◽

pp. 063704 ◽

Cited By ~ 11

Author(s):

F. Jiménez-Molinos ◽

F. Gámiz ◽

L. Donetti

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Gate Stack

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Quantitative Understanding of Electron Mobility Limited by Coulomb Scattering in Metal Oxide Semiconductor Field Effect Transistors with N2O and NO Oxynitrides

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.2597 ◽

2001 ◽

Vol 40 (Part 1, No. 4B) ◽

pp. 2597-2602 ◽

Cited By ~ 5

Author(s):

Takamitsu Ishihara ◽

Shin-ichi Takagi ◽

Masaki Kondo

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Quantitative Understanding

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Remote Coulomb scattering in metal–oxide–semiconductor field effect transistors: Screening by electrons in the gate

Applied Physics Letters ◽

10.1063/1.1630169 ◽

2003 ◽

Vol 83 (23) ◽

pp. 4848-4850 ◽

Cited By ~ 36

Author(s):

F. Gámiz ◽

M. V. Fischetti

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering

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Kubo-Greenwood approach for the calculation of mobility in gate-all-around nanowire metal-oxide-semiconductor field-effect transistors including screened remote Coulomb scattering—Comparison with experiment

Journal of Applied Physics ◽

10.1063/1.4719081 ◽

2012 ◽

Vol 111 (10) ◽

pp. 103710 ◽

Cited By ~ 7

Author(s):

J. Dura ◽

F. Triozon ◽

S. Barraud ◽

D. Munteanu ◽

S. Martinie ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Comparison With Experiment

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Ballistic current in metal-oxide-semiconductor field-effect transistors: The role of device topology

Journal of Applied Physics ◽

10.1063/1.3197635 ◽

2009 ◽

Vol 106 (5) ◽

pp. 053702 ◽

Cited By ~ 1

Author(s):

M. Ali Pourghaderi ◽

Wim Magnus ◽

Bart Sorée ◽

Marc Meuris ◽

Kristin De Meyer ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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The role of the temperature on the scattering mechanisms limiting the electron mobility in metal-oxide-semiconductor field-effect-transistors fabricated on (110) silicon-oriented wafers

2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) ◽

10.1109/essderc.2012.6343371 ◽

2012 ◽

Cited By ~ 2

Author(s):

Philippe Gaubert ◽

Akinobu Teramoto ◽

Shigetoshi Sugawa ◽

Tadahiro Ohmi

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Scattering Mechanisms

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