Three-dimensional simulations of ultrasmall metal–oxide–semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics

W. J. Gross; D. Vasileska; D. K. Ferry

doi:10.1063/1.1453510

Three-dimensional simulations of ultrasmall metal–oxide–semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics

Journal of Applied Physics ◽

10.1063/1.1453510 ◽

2002 ◽

Vol 91 (6) ◽

pp. 3737-3740 ◽

Cited By ~ 21

Author(s):

W. J. Gross ◽

D. Vasileska ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Three Dimensional Simulations

Download Full-text

Investigation of Random Dopant Fluctuation for Multi-Gate Metal–Oxide–Semiconductor Field-Effect Transistors Using Analytical Solutions of Three-Dimensional Poisson's Equation

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2097 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2097-2102

Author(s):

Yu-Sheng Wu ◽

Pin Su

Keyword(s):

Metal Oxide ◽

Analytical Solutions ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Poisson's Equation ◽

Random Dopant Fluctuation ◽

Random Dopant

Download Full-text

Three-dimensional electronic structures in the Si inversion layer of nanoscale metal-oxide-semiconductor field-effect transistors

Solid State Communications ◽

10.1016/j.ssc.2005.10.027 ◽

2006 ◽

Vol 137 (1-2) ◽

pp. 26-29

Author(s):

J.H. Kim ◽

J.H. Jung ◽

T.W. Kim

Keyword(s):

Metal Oxide ◽

Electronic Structures ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

The role of Si orientation and temperature on the carrier mobility in metal oxide semiconductor field-effect transistors with ultrathin HfO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.2210627 ◽

2006 ◽

Vol 100 (1) ◽

pp. 014504 ◽

Cited By ~ 38

Author(s):

B. Mereu ◽

C. Rossel ◽

E. P. Gusev ◽

M. Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

Journal of Applied Physics ◽

10.1063/1.1699496 ◽

2004 ◽

Vol 95 (12) ◽

pp. 7954-7960 ◽

Cited By ~ 47

Author(s):

M. J. Gilbert ◽

D. K. Ferry

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Three Dimensional Modeling ◽

Dimensional Modeling

Download Full-text

Role of shallow Si/SiO2 interface states on high frequency channel noise in n-channel metal-oxide-semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.3231924 ◽

2009 ◽

Vol 95 (12) ◽

pp. 123508 ◽

Cited By ~ 1

Keyword(s):

Metal Oxide ◽

High Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Noise ◽

Frequency Channel

Download Full-text

On the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductor-field-effect-transistors

Journal of Applied Physics ◽

10.1063/1.3669490 ◽

2011 ◽

Vol 110 (12) ◽

pp. 124503 ◽

Cited By ~ 2

Author(s):

S. M. Thomas ◽

M. J. Prest ◽

T. E. Whall ◽

D. R. Leadley ◽

P. Toniutti ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Hafnium Silicate

Download Full-text

Random dopant model for three-dimensional drift-diffusion simulations in metal–oxide–semiconductor field-effect-transistors

Applied Physics Letters ◽

10.1063/1.1406980 ◽

2001 ◽

Vol 79 (14) ◽

pp. 2267-2269 ◽

Cited By ~ 27

Author(s):

Nobuyuki Sano ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drift Diffusion ◽

Random Dopant

Download Full-text

Ballistic current in metal-oxide-semiconductor field-effect transistors: The role of device topology

Journal of Applied Physics ◽

10.1063/1.3197635 ◽

2009 ◽

Vol 106 (5) ◽

pp. 053702 ◽

Cited By ~ 1

Author(s):

M. Ali Pourghaderi ◽

Wim Magnus ◽

Bart Sorée ◽

Marc Meuris ◽

Kristin De Meyer ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging

Applied Physics Letters ◽

10.1063/1.3644960 ◽

2011 ◽

Vol 99 (13) ◽

pp. 133502 ◽

Cited By ~ 34

Author(s):

H. Takamizawa ◽

Y. Shimizu ◽

K. Inoue ◽

T. Toyama ◽

N. Okada ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10 nm devices

Journal of Applied Physics ◽

10.1063/1.4894152 ◽

2014 ◽

Vol 116 (8) ◽

pp. 084508 ◽

Cited By ~ 1

Author(s):

N. D. Akhavan ◽

G. Jolley ◽

G. A. Umana-Membreno ◽

J. Antoszewski ◽

L. Faraone

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Topological Insulator ◽

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text