Spin-current-induced dynamics in ferromagnetic nanopillars of lateral spin-valve structures

2009 ◽  
Vol 105 (7) ◽  
pp. 07D110 ◽  
Author(s):  
J.-B. Laloë ◽  
T. Yang ◽  
T. Kimura ◽  
Y. Otani
Keyword(s):  
Spin Valve ◽  
Spin Current

scholarly journals Effect of the low-resistance tunnel barriers induced inhomogeneous spin current distribution in graphene crossed configuration lateral spin valve

AIP Advances ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 115005
Author(s):  
Yanping Liu ◽  
Cheng Zeng ◽  
Junnan Ding ◽  
Jiahong Zhong ◽  
Yuanji Gao ◽  
...  
Keyword(s):  
Current Distribution ◽  
Spin Valve ◽  
Spin Current ◽  
Low Resistance ◽  
Tunnel Barriers ◽  
Inhomogeneous Spin

Effects of FM/NM Interfaces on Spin Accumulation in Free Layer of Pseudo-Spin-Valve Structure

2007 ◽  
Vol 998 ◽  
Author(s):  
Jiuning Hu ◽  
Min Ren ◽  
Lei Zhang ◽  
Ning Deng ◽  
Hao Dong ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Spin Valve ◽  
Spin Current ◽  
Spin Accumulation ◽  
Free Layer ◽  
Fixed Layer ◽  
Spacer Layer ◽  
Polarization Factor ◽  
Valve Structure ◽  
Parallel Configuration

ABSTRACTThe ferromagnetic/nonmagnetic (FM/NM) interfacial effects on the spin accumulation in the free layer were studied in a pseudo-spin-valve structure (PSVs) consisting of two FM layers separated by a NM spacer layer. We developed a spin current model for the current-induced magnetic switching (CIMS) effect based on the spin diffusion equations and appropriate boundary conditions, and derived a new formula for the spin-dependent electrochemical potentials that are related to the spin-dependent density of states. The results indicate that the spin accumulation in the free layer mainly depends on the interfacial spin asymmetry coefficient Ξ?which originates from the spin-dependent interfacial conductance. In the parallel (anti-parallel) configuration of the magnetization direction for the free and fixed layer, the positive (negative) electron current (electrons from the free layer to the fixed layer and vice versa) drives the spin current polarization factor at the interface between the top electrode and the free layer to vary from Ξ? (-Ξ?) to 0, while at the interface between the free layer and the spacer layer the spin current polarization factor vary from Ξ? (0) to Ξ?/2, which means the total spin current polarization factor in the free layer varies from 0 (Ξ?) to Ξ?/2. These results show that the anti-parallel configuration has a less critical switching current than that of the parallel configuration. Thus, we can design PSVs with symmetrical critical current based on the model.

Large spin current injection in nano-pillar-based lateral spin valve

2016 ◽  
Author(s):  
Tatsuya Nomura ◽  
Kohei Ohnishi ◽  
Takashi Kimura
Keyword(s):  
Spin Valve ◽  
Spin Current ◽  
Current Injection ◽  
Large Spin

Conversion of equilibrium spin current into charge current through a quantum-dot spin valve subject to circularly polarized field

2015 ◽  
Vol 379 (47-48) ◽  
pp. 3114-3118 ◽  
Author(s):  
Feng Liang ◽  
Ben-Ling Gao ◽  
Guang Hu ◽  
Yu Gu ◽  
Ning Xu
Keyword(s):  
Quantum Dot ◽  
Spin Valve ◽  
Spin Current ◽  
Circularly Polarized ◽  
Charge Current

scholarly journals Enhancement in spin-torque efficiency by nonuniform spin current generated within a tapered nanopillar spin valve

2008 ◽  
Vol 77 (14) ◽  
Author(s):  
P. M. Braganca ◽  
O. Ozatay ◽  
A. G. F. Garcia ◽  
O. J. Lee ◽  
D. C. Ralph ◽  
...  
Keyword(s):  
Spin Valve ◽  
Spin Current ◽  
Spin Torque

SPIN FILTERING IN THE DOUBLE-BARRIER STRUCTURE

2005 ◽  
Vol 19 (06) ◽  
pp. 989-997
Author(s):  
HUAN-WEN LAI ◽  
XUEAN ZHAO ◽  
YOU-QUAN LI
Keyword(s):  
Electron Gas ◽  
Spin Valve ◽  
Spin Current ◽  
Barrier Structure ◽  
Dimensional Electron ◽  
Double Barrier ◽  
Magnetic Barrier ◽  
Electron Transport Properties ◽  
Dimensional Electron Gas ◽  
Magnetic Barriers

In this paper, we study the electron transport properties in the double non-collinear δ-magnetic barriers within 2-dimensional electron gas. We find that the transmission of spin current depends on the relative orientation of each magnetic barrier. In addition to the well-known unpolarized configurations in an antiparallel magnetic barrier structure, we also find that there exists infinite unpolarized structures due to the time-reversal symmetry. These structures will be important in the designs of spin valve.

Introduction to spin-polarized ballistic hot electron injection and detection in silicon

2011 ◽  
Vol 369 (1951) ◽  
pp. 3554-3574 ◽  
Author(s):  
Ian Appelbaum
Keyword(s):  
Ohmic Contacts ◽  
Spin Injection ◽  
Spin Valve ◽  
Diffusion Constant ◽  
Spin Current ◽  
Mean Free Path ◽  
Quantitative Model ◽  
Hot Electron ◽  
Ferromagnetic Thin Films ◽  
Spin Lifetime

Ballistic hot electron transport overcomes the well-known problems of conductivity and spin lifetime mismatch that plague spin injection attempts in semiconductors using ferromagnetic ohmic contacts. Through the spin dependence of the mean free path in ferromagnetic thin films, it also provides a means for spin detection after transport. Experimental results using these techniques (consisting of spin precession and spin-valve measurements) with silicon-based devices reveals the exceptionally long spin lifetime and high spin coherence induced by drift-dominated transport in the semiconductor. An appropriate quantitative model that accurately simulates the device characteristics for both undoped and doped spin transport channels is described; it can be used to recover the transit-time distribution from precession measurements and determine the spin current velocity, diffusion constant and spin lifetime, constituting a spin ‘Haynes–Shockley’ experiment without time-of-flight techniques. A perspective on the future of these methods is offered as a summary.

Low spin current-driven dynamic excitations and metastability in spin-valve nanocontacts with unpinned artificial antiferromagnet

2011 ◽  
Vol 98 (4) ◽  
pp. 042504 ◽  
Author(s):  
M. Eggeling ◽  
T. Dimopoulos ◽  
T. Uhrmann ◽  
O. Bethge ◽  
R. Heer ◽  
...  
Keyword(s):  
Spin Valve ◽  
Spin Current ◽  
Dynamic Excitations
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