scholarly journals Enhancement in spin-torque efficiency by nonuniform spin current generated within a tapered nanopillar spin valve

2008 ◽  
Vol 77 (14) ◽  
Author(s):  
P. M. Braganca ◽  
O. Ozatay ◽  
A. G. F. Garcia ◽  
O. J. Lee ◽  
D. C. Ralph ◽  
...  
Keyword(s):  
Spin Valve ◽  
Spin Current ◽  
Spin Torque

scholarly journals Effect of the low-resistance tunnel barriers induced inhomogeneous spin current distribution in graphene crossed configuration lateral spin valve

AIP Advances ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 115005
Author(s):  
Yanping Liu ◽  
Cheng Zeng ◽  
Junnan Ding ◽  
Jiahong Zhong ◽  
Yuanji Gao ◽  
...  
Keyword(s):  
Current Distribution ◽  
Spin Valve ◽  
Spin Current ◽  
Low Resistance ◽  
Tunnel Barriers ◽  
Inhomogeneous Spin

Spin-current-induced dynamics in ferromagnetic nanopillars of lateral spin-valve structures

2009 ◽  
Vol 105 (7) ◽  
pp. 07D110 ◽  
Author(s):  
J.-B. Laloë ◽  
T. Yang ◽  
T. Kimura ◽  
Y. Otani
Keyword(s):  
Spin Valve ◽  
Spin Current

Enhancing Frequency and Reducing the Power of Spin-Torque Nanooscillator By The Generated Oersted Field

SPIN ◽  
2020 ◽  
Vol 10 (02) ◽  
pp. 2050012
Author(s):  
H. Bhoomeeswaran ◽  
P. Sabareesan
Keyword(s):  
Spin Valve ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Torque ◽  
Spintronic Devices ◽  
Frequency Tunability ◽  
Spin Polarized ◽  
The Individual ◽  
Promising Source ◽  
Nonmagnetic Spacer

The current-driven magnetization precession dynamics stimulated by Spin-Transfer Torque (STT) in a trilayer spin-valve device (typically Spin-Torque Nanooscillator (STNO)) is numerically investigated by solving the Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation. We have devised four STNO devices made of ferromagnetic alloys such as CoPt, CoFeB, Fe[Formula: see text]B[Formula: see text]Ni2 and EuO, which act as free and fixed layers. Here, copper acts as a nonmagnetic spacer for all the devices. In this work, we have introduced the current-induced Oersted field, which is generated when a spin-polarized current passes through the device. The generated Oersted field strength is varied by increasing the diameter of the STNO device. Frequency tunability is achieved in all the four devices, whereas the power of the individual device reduces. The frequency and power of the devices depend entirely on the saturation magnetization of the material, which inherently reflects in the current density and the coherence of the spin-polarized DC. In all devices, the frequency increases, whereas the power decreases by increasing the strength of the Oersted field. Among the four devices, the maximum frequency can be tuned up to 104[Formula: see text]GHz with 40[Formula: see text]nm device diameter, which is obtained for EuO material. This opens a promising source and paves a glittering future for the nanoscale spintronic devices.

Effects of FM/NM Interfaces on Spin Accumulation in Free Layer of Pseudo-Spin-Valve Structure

2007 ◽  
Vol 998 ◽  
Author(s):  
Jiuning Hu ◽  
Min Ren ◽  
Lei Zhang ◽  
Ning Deng ◽  
Hao Dong ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Spin Valve ◽  
Spin Current ◽  
Spin Accumulation ◽  
Free Layer ◽  
Fixed Layer ◽  
Spacer Layer ◽  
Polarization Factor ◽  
Valve Structure ◽  
Parallel Configuration

ABSTRACTThe ferromagnetic/nonmagnetic (FM/NM) interfacial effects on the spin accumulation in the free layer were studied in a pseudo-spin-valve structure (PSVs) consisting of two FM layers separated by a NM spacer layer. We developed a spin current model for the current-induced magnetic switching (CIMS) effect based on the spin diffusion equations and appropriate boundary conditions, and derived a new formula for the spin-dependent electrochemical potentials that are related to the spin-dependent density of states. The results indicate that the spin accumulation in the free layer mainly depends on the interfacial spin asymmetry coefficient Ξ?which originates from the spin-dependent interfacial conductance. In the parallel (anti-parallel) configuration of the magnetization direction for the free and fixed layer, the positive (negative) electron current (electrons from the free layer to the fixed layer and vice versa) drives the spin current polarization factor at the interface between the top electrode and the free layer to vary from Ξ? (-Ξ?) to 0, while at the interface between the free layer and the spacer layer the spin current polarization factor vary from Ξ? (0) to Ξ?/2, which means the total spin current polarization factor in the free layer varies from 0 (Ξ?) to Ξ?/2. These results show that the anti-parallel configuration has a less critical switching current than that of the parallel configuration. Thus, we can design PSVs with symmetrical critical current based on the model.

Modeling of spin-torque driven magnetization dynamics in a spin-valve with combined in-plane and out-of-plane polarizers

2011 ◽  
Vol 99 (22) ◽  
pp. 222509 ◽  
Author(s):  
Zhiwei Hou ◽  
Zongzhi Zhang ◽  
Jianwei Zhang ◽  
Yaowen Liu
Keyword(s):  
Spin Valve ◽  
Spin Torque ◽  
Magnetization Dynamics ◽  
Out Of Plane

Large spin current injection in nano-pillar-based lateral spin valve

2016 ◽  
Author(s):  
Tatsuya Nomura ◽  
Kohei Ohnishi ◽  
Takashi Kimura
Keyword(s):  
Spin Valve ◽  
Spin Current ◽  
Current Injection ◽  
Large Spin

Conversion of equilibrium spin current into charge current through a quantum-dot spin valve subject to circularly polarized field

2015 ◽  
Vol 379 (47-48) ◽  
pp. 3114-3118 ◽  
Author(s):  
Feng Liang ◽  
Ben-Ling Gao ◽  
Guang Hu ◽  
Yu Gu ◽  
Ning Xu
Keyword(s):  
Quantum Dot ◽  
Spin Valve ◽  
Spin Current ◽  
Circularly Polarized ◽  
Charge Current
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