scholarly journals Effect of the low-resistance tunnel barriers induced inhomogeneous spin current distribution in graphene crossed configuration lateral spin valve

AIP Advances ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 115005
Author(s):  
Yanping Liu ◽  
Cheng Zeng ◽  
Junnan Ding ◽  
Jiahong Zhong ◽  
Yuanji Gao ◽  
...  
Keyword(s):  
Current Distribution ◽  
Spin Valve ◽  
Spin Current ◽  
Low Resistance ◽  
Tunnel Barriers ◽  
Inhomogeneous Spin

Incoherent spin current

2017 ◽  
Author(s):  
K. Ando ◽  
E. Saitoh
Keyword(s):  
Diffusion Equation ◽  
Spin Density ◽  
Spin Diffusion ◽  
Spin Injection ◽  
Spin Current ◽  
Ferromagnetic Semiconductor ◽  
Electrochemical Potential ◽  
Semiconductor Interface ◽  
Interface Resistance ◽  
Inhomogeneous Spin

This chapter introduces the concept of incoherent spin current. A diffusive spin current can be driven by spatial inhomogeneous spin density. Such spin flow is formulated using the spin diffusion equation with spin-dependent electrochemical potential. The chapter also proposes a solution to the problem known as the conductivity mismatch problem of spin injection into a semiconductor. A way to overcome the problem is by using a ferromagnetic semiconductor as a spin source; another is to insert a spin-dependent interface resistance at a metal–semiconductor interface.

Low resistance spin-valve-type current-perpendicular-to-plane giant magnetoresistance with Co75Fe25

2005 ◽  
Vol 97 (10) ◽  
pp. 10C507 ◽  
Author(s):  
Ken-ichi Aoshima ◽  
Nobuhiko Funabashi ◽  
Kenji Machida ◽  
Yasuyoshi Miyamoto ◽  
Kiyoshi Kuga
Keyword(s):  
Giant Magnetoresistance ◽  
Spin Valve ◽  
Low Resistance ◽  
Current Perpendicular To Plane

Spin-current-induced dynamics in ferromagnetic nanopillars of lateral spin-valve structures

2009 ◽  
Vol 105 (7) ◽  
pp. 07D110 ◽  
Author(s):  
J.-B. Laloë ◽  
T. Yang ◽  
T. Kimura ◽  
Y. Otani
Keyword(s):  
Spin Valve ◽  
Spin Current

scholarly journals Current distribution insidePy∕Culateral spin-valve devices

2005 ◽  
Vol 71 (9) ◽  
Author(s):  
J. Hamrle ◽  
T. Kimura ◽  
Y. Otani ◽  
K. Tsukagoshi ◽  
Y. Aoyagi
Keyword(s):  
Current Distribution ◽  
Spin Valve

Towards a Room Temperature Organic Spin Valve: Structural, Magnetic and Transport Properties of Fe3O4/PTCTE/Co Devices

2011 ◽  
Vol 1359 ◽  
Author(s):  
Mathieu Palosse ◽  
Elena Bedel-Pereira ◽  
François Olivié ◽  
Isabelle Séguy ◽  
Christina Villeneuve ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Current Distribution ◽  
Morphological Study ◽  
Room Temperature ◽  
Spin Valve ◽  
Vibrating Sample Magnetometer ◽  
Force Microscopy ◽  
Dc Sputtering ◽  
Ferromagnetic Electrodes ◽  
Atomic Force

ABSTRACTThis paper describes first steps in preparation of an organic spin valve based on a perylene derivative (PTCTE) sandwiched between magnetite (Fe3O4) and cobalt (Co) ferromagnetic electrodes. MgO(001)/Fe3O4/PTCTE (450 nm)/Co devices were prepared with different Co soft deposition methods: off-axis dc-sputtering or Joule evaporation. Vibrating Sample Magnetometer (VSM) studies of the Fe3O4/PTCTE/Co stacks evidence spin valve behavior with magnetically uncoupled electrodes. These results are correlated with a morphological study by atomic force microscopy (AFM) of each layer and tunneling AFM (TUNA) for the investigation of inhomogeneity of current distribution in the devices. Finally, macroscopic I-V characteristics performed on the same devices will be presented and compared with TUNA results.

Effects of FM/NM Interfaces on Spin Accumulation in Free Layer of Pseudo-Spin-Valve Structure

2007 ◽  
Vol 998 ◽  
Author(s):  
Jiuning Hu ◽  
Min Ren ◽  
Lei Zhang ◽  
Ning Deng ◽  
Hao Dong ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Spin Valve ◽  
Spin Current ◽  
Spin Accumulation ◽  
Free Layer ◽  
Fixed Layer ◽  
Spacer Layer ◽  
Polarization Factor ◽  
Valve Structure ◽  
Parallel Configuration

ABSTRACTThe ferromagnetic/nonmagnetic (FM/NM) interfacial effects on the spin accumulation in the free layer were studied in a pseudo-spin-valve structure (PSVs) consisting of two FM layers separated by a NM spacer layer. We developed a spin current model for the current-induced magnetic switching (CIMS) effect based on the spin diffusion equations and appropriate boundary conditions, and derived a new formula for the spin-dependent electrochemical potentials that are related to the spin-dependent density of states. The results indicate that the spin accumulation in the free layer mainly depends on the interfacial spin asymmetry coefficient Ξ?which originates from the spin-dependent interfacial conductance. In the parallel (anti-parallel) configuration of the magnetization direction for the free and fixed layer, the positive (negative) electron current (electrons from the free layer to the fixed layer and vice versa) drives the spin current polarization factor at the interface between the top electrode and the free layer to vary from Ξ? (-Ξ?) to 0, while at the interface between the free layer and the spacer layer the spin current polarization factor vary from Ξ? (0) to Ξ?/2, which means the total spin current polarization factor in the free layer varies from 0 (Ξ?) to Ξ?/2. These results show that the anti-parallel configuration has a less critical switching current than that of the parallel configuration. Thus, we can design PSVs with symmetrical critical current based on the model.

Large spin current injection in nano-pillar-based lateral spin valve

2016 ◽  
Author(s):  
Tatsuya Nomura ◽  
Kohei Ohnishi ◽  
Takashi Kimura
Keyword(s):  
Spin Valve ◽  
Spin Current ◽  
Current Injection ◽  
Large Spin

Low-resistance spin injection into silicon using graphene tunnel barriers

2012 ◽  
Vol 7 (11) ◽  
pp. 737-742 ◽  
Author(s):  
O. M. J. van 't Erve ◽  
A. L. Friedman ◽  
E. Cobas ◽  
C. H. Li ◽  
J. T. Robinson ◽  
...  
Keyword(s):  
Spin Injection ◽  
Low Resistance ◽  
Tunnel Barriers

Conversion of equilibrium spin current into charge current through a quantum-dot spin valve subject to circularly polarized field

2015 ◽  
Vol 379 (47-48) ◽  
pp. 3114-3118 ◽  
Author(s):  
Feng Liang ◽  
Ben-Ling Gao ◽  
Guang Hu ◽  
Yu Gu ◽  
Ning Xu
Keyword(s):  
Quantum Dot ◽  
Spin Valve ◽  
Spin Current ◽  
Circularly Polarized ◽  
Charge Current
Sign in / Sign up

Export Citation Format

Share Document