Longitudinal and transverse spin current absorptions in a lateral spin-valve structure

2012 ◽  
Vol 86 (10) ◽  
Author(s):  
S. Nonoguchi ◽  
T. Nomura ◽  
T. Kimura
Keyword(s):  
Spin Valve ◽  
Spin Current ◽  
Transverse Spin ◽  
Valve Structure

Effects of FM/NM Interfaces on Spin Accumulation in Free Layer of Pseudo-Spin-Valve Structure

2007 ◽  
Vol 998 ◽  
Author(s):  
Jiuning Hu ◽  
Min Ren ◽  
Lei Zhang ◽  
Ning Deng ◽  
Hao Dong ◽  
...  
Keyword(s):  
Spin Diffusion ◽  
Spin Valve ◽  
Spin Current ◽  
Spin Accumulation ◽  
Free Layer ◽  
Fixed Layer ◽  
Spacer Layer ◽  
Polarization Factor ◽  
Valve Structure ◽  
Parallel Configuration

ABSTRACTThe ferromagnetic/nonmagnetic (FM/NM) interfacial effects on the spin accumulation in the free layer were studied in a pseudo-spin-valve structure (PSVs) consisting of two FM layers separated by a NM spacer layer. We developed a spin current model for the current-induced magnetic switching (CIMS) effect based on the spin diffusion equations and appropriate boundary conditions, and derived a new formula for the spin-dependent electrochemical potentials that are related to the spin-dependent density of states. The results indicate that the spin accumulation in the free layer mainly depends on the interfacial spin asymmetry coefficient Ξ?which originates from the spin-dependent interfacial conductance. In the parallel (anti-parallel) configuration of the magnetization direction for the free and fixed layer, the positive (negative) electron current (electrons from the free layer to the fixed layer and vice versa) drives the spin current polarization factor at the interface between the top electrode and the free layer to vary from Ξ? (-Ξ?) to 0, while at the interface between the free layer and the spacer layer the spin current polarization factor vary from Ξ? (0) to Ξ?/2, which means the total spin current polarization factor in the free layer varies from 0 (Ξ?) to Ξ?/2. These results show that the anti-parallel configuration has a less critical switching current than that of the parallel configuration. Thus, we can design PSVs with symmetrical critical current based on the model.

Effect of probe configuration on spin accumulation in lateral spin-valve structure

2005 ◽  
Vol 286 ◽  
pp. 88-90 ◽  
Author(s):  
T. Kimura ◽  
J. Hamrle ◽  
Y. Otani ◽  
K. Tsukagoshi ◽  
Y. Aoyagi
Keyword(s):  
Spin Valve ◽  
Spin Accumulation ◽  
Valve Structure

Layer selective magnetic moment distribution in an epitaxial double spin valve structure: Si[001]/Cu

1999 ◽  
Vol 35 (5) ◽  
pp. 3847-3849 ◽  
Author(s):  
B.C. Choi ◽  
A. Samad ◽  
W.Y. Lee ◽  
S. Langridge ◽  
J. Penfold ◽  
...  
Keyword(s):  
Magnetic Moment ◽  
Spin Valve ◽  
Double Spin ◽  
Moment Distribution ◽  
Valve Structure

scholarly journals Optically excited spin pumping mediating collective magnetization dynamics in a spin valve structure

2018 ◽  
Vol 98 (6) ◽  
Author(s):  
A. P. Danilov ◽  
A. V. Scherbakov ◽  
B. A. Glavin ◽  
T. L. Linnik ◽  
A. M. Kalashnikova ◽  
...  
Keyword(s):  
Spin Valve ◽  
Magnetization Dynamics ◽  
Spin Pumping ◽  
Valve Structure

Effective modulation of spin accumulation using a ferromagnetic/nonmagnetic bilayer spin channel

2021 ◽  
Author(s):  
Taisei Ariki ◽  
Tatsuya Nomura ◽  
Kohei Ohnishi ◽  
Takashi Kimura
Keyword(s):  
Spin Injection ◽  
Spin Valve ◽  
Transverse Spin ◽  
Spin Accumulation ◽  
Spin Channel ◽  
Relative Angle ◽  
Channel Layer ◽  
Spin Polarized ◽  
Resistance Model ◽  
Large Spin

Abstract A lateral spin valve consisting of highly spin-polarized CoFeAl electrodes with a CoFeAl/Cu bilayer spin channel has been developed. Despite a large spin absorption into the CoFeAl capping channel layer, an efficient spin injection and detection using the CoFeAl electrodes enable us to observe a clear spin valve signal. We demonstrate that the nonlocal spin accumulation signal is significantly modulated depending on the relative angle of the magnetizations between the spin injector and absorber. The observed modulation phenomena is explained by the longitudinal and transverse spin absorption effects into the CoFeAl channel layer with the spin resistance model.

scholarly journals Effect of the low-resistance tunnel barriers induced inhomogeneous spin current distribution in graphene crossed configuration lateral spin valve

AIP Advances ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 115005
Author(s):  
Yanping Liu ◽  
Cheng Zeng ◽  
Junnan Ding ◽  
Jiahong Zhong ◽  
Yuanji Gao ◽  
...  
Keyword(s):  
Current Distribution ◽  
Spin Valve ◽  
Spin Current ◽  
Low Resistance ◽  
Tunnel Barriers ◽  
Inhomogeneous Spin

Improved Thermal Stability of Gmr Spin Valve Films

1995 ◽  
Vol 384 ◽  
Author(s):  
R. D. Mcmichael ◽  
W. F. Egelhoff ◽  
Minh Ha
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Annealing Time ◽  
General Structure ◽  
Spin Valve ◽  
Square Root ◽  
Magnetic Multilayer ◽  
Valve Structure ◽  
Thermal Stability Of

ABSTRACTIn order to improve the thermal stability of magnetic multilayer “spin valve” structures, we have measured the magnetic and magnetoresistive properties of a number of samples with the general structure of NiO/Co/Cu/Co/Cu/Co/NiO as a function of annealing time at 250 °C. The magnetoresistance (MR) of the samples annealed in air decreases proportionally to the square root of the annealing time. For samples annealed in a vacuum, the decrease in magnetoresistance is reduced, but not eliminated. Magnetometry of a vacuum annealed NiO/Co/NiO sample shows a magnetization reduction and a coercivity increase which suggest oxidation of the NiO-biased “outer” Co layers of the spin valve structure. For increasing NiObiased Co layer thickness, we show enhanced thermal stability and even increasing MR with annealing time for samples with the thickest outer Co layers.

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