Channel length dependence of hot-carrier-induced degradation in n-type drain extended metal-oxide-semiconductor transistors

Jone F. Chen; Shiang-Yu Chen; Kuo-Ming Wu; C. M. Liu

doi:10.1063/1.3040693

Channel length dependence of hot-carrier-induced degradation in n-type drain extended metal-oxide-semiconductor transistors

Applied Physics Letters ◽

10.1063/1.3040693 ◽

2008 ◽

Vol 93 (22) ◽

pp. 223504 ◽

Cited By ~ 9

Author(s):

Jone F. Chen ◽

Shiang-Yu Chen ◽

Kuo-Ming Wu ◽

C. M. Liu

Keyword(s):

Metal Oxide ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Length Dependence

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Channel length dependence of the 1/fnoise in silicon metal‐oxide‐semiconductor field‐effect transistors. II. Verification of the acceleration 1/fnoise process

Journal of Applied Physics ◽

10.1063/1.341892 ◽

1988 ◽

Vol 64 (2) ◽

pp. 907-912 ◽

Cited By ~ 11

Author(s):

Q. Peng ◽

A. N. Birbas ◽

A. van der Ziel ◽

A. D. van Rheenen ◽

K. Amberiadis

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Length Dependence

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Quantum interference in ultrashort channel length silicon metal‐oxide‐semiconductor field‐effect transistors

Applied Physics Letters ◽

10.1063/1.106121 ◽

1991 ◽

Vol 59 (16) ◽

pp. 2028-2030 ◽

Cited By ~ 13

Author(s):

A. Hartstein

Keyword(s):

Metal Oxide ◽

Quantum Interference ◽

Field Effect ◽

Field Effect Transistors ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Electrically detected magnetic resonance study of defects created by hot carrier stress at the SiC/SiO2 interface of a SiC n-channel metal-oxide-semiconductor field-effect transistor

Applied Physics Letters ◽

10.1063/1.4891847 ◽

2014 ◽

Vol 105 (4) ◽

pp. 043506 ◽

Cited By ~ 2

Author(s):

G. Gruber ◽

P. Hadley ◽

M. Koch ◽

T. Aichinger

Keyword(s):

Magnetic Resonance ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Magnetic Resonance Study ◽

Hot Carrier ◽

Electrically Detected Magnetic Resonance ◽

Effect Transistor

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STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR

Acta Physica Sinica ◽

10.7498/aps.49.1241 ◽

2000 ◽

Vol 49 (7) ◽

pp. 1241

Author(s):

REN HONG-XIA ◽

HAO YUE ◽

XU DONG-GANG

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Carrier Effect ◽

Effect Transistor ◽

Hot Carrier Effect

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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

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Impact of Mechanical Stress on Hot-Carrier Lifetime and Time-Dependent Dielectric Breakdown in Downscaled Complimentary Metal–Oxide–Semiconductor

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.021206 ◽

2009 ◽

Vol 48 (2) ◽

pp. 021206 ◽

Cited By ~ 1

Author(s):

Eiji Morifuji

Keyword(s):

Metal Oxide ◽

Mechanical Stress ◽

Carrier Lifetime ◽

Dielectric Breakdown ◽

Metal Oxide Semiconductor ◽

Time Dependent ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Time Dependent Dielectric Breakdown

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A metal‐oxide‐semiconductor field‐effect transistor with a 20‐nm channel length

Journal of Applied Physics ◽

10.1063/1.346512 ◽

1990 ◽

Vol 68 (5) ◽

pp. 2493-2495 ◽

Cited By ~ 14

Author(s):

A. Hartstein ◽

N. F. Albert ◽

A. A. Bright ◽

S. B. Kaplan ◽

B. Robinson ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

20 Nm

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Suppression of Parasitic Bipolar Action and Improvement of Hot-Carrier Reliability in Fully-Depleted Metal-Oxide-Semiconductor Field Effect Transistors on SIMOX (Separation by IMplanted Oxygen) Introducing Recombination Centers near Source Junction

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.6175 ◽

1997 ◽

Vol 36 (Part 1, No. 10) ◽

pp. 6175-6180 ◽

Cited By ~ 4

Author(s):

Toshiaki Tsuchiya ◽

Terukazu Ohno ◽

Satoshi Tazawa ◽

Masaaki Tomizawa

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fully Depleted ◽

Hot Carrier ◽

Recombination Centers

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Mechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxide-semiconductor transistors

Applied Physics Letters ◽

10.1063/1.2947588 ◽

2008 ◽

Vol 92 (24) ◽

pp. 243501 ◽

Cited By ~ 7

Author(s):

Jone F. Chen ◽

Kuen-Shiuan Tian ◽

Shiang-Yu Chen ◽

J. R. Lee ◽

Kuo-Ming Wu ◽

...

Keyword(s):

Metal Oxide ◽

Prediction Method ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lifetime Prediction ◽

Hot Carrier

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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