Channel length dependence of the 1/fnoise in silicon metal‐oxide‐semiconductor field‐effect transistors. II. Verification of the acceleration 1/fnoise process

1988 ◽  
Vol 64 (2) ◽  
pp. 907-912 ◽  
Author(s):  
Q. Peng ◽  
A. N. Birbas ◽  
A. van der Ziel ◽  
A. D. van Rheenen ◽  
K. Amberiadis
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Length Dependence

ANOMALOUS LENGTH DEPENDENCE OF THE CONDUCTANCE OF A 2D CHANNEL NEAR THE THRESHOLD

1994 ◽  
Vol 08 (07) ◽  
pp. 445-454
Author(s):  
M. E. RAIKH ◽  
F. G. PIKUS
Keyword(s):  
Metal Oxide ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Metal Oxide Semiconductor ◽  
Potential Profile ◽  
Oxide Semiconductor ◽  
Assisted Tunneling ◽  
Channel Region

The modification of the potential profile in the channel of metal oxide semiconductor field effect transistors, caused by electrons in n+ contacts attracted to the surface by the gate voltage, is considered. Effective narrowing of the channel region, in which the transport is due to the phonon-assisted tunneling, could be responsible for the dramatic increase of the conductance with channel length in the strongly localized regime, as observed by Popović, Fowler, and Washburn.1

Anomalous Gate Length Dependence of Threshold Voltage of Trench-Isolated Metal Oxide Semiconductor Field Effect Transistors

1998 ◽  
Vol 37 (Part 2, No. 7B) ◽  
pp. L852-L854 ◽  
Author(s):  
Toshiyuki Oishi ◽  
Katsuomi Shiozawa ◽  
Akihiko Furukawa ◽  
Yuji Abe ◽  
Yasunori Tokuda
Keyword(s):  
Metal Oxide ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Length ◽  
Length Dependence
Sign in / Sign up

Export Citation Format

Share Document