All low voltage lateral junction scanning tunneling microscope with very high precision and stability

2008 ◽  
Vol 79 (11) ◽  
pp. 113707 ◽  
Author(s):  
Yubin Hou ◽  
Jihui Wang ◽  
Qingyou Lu
1994 ◽  
Vol 64 (3) ◽  
pp. 390-392 ◽  
Author(s):  
C. R. K. Marrian ◽  
F. K. Perkins ◽  
S. L. Brandow ◽  
T. S. Koloski ◽  
E. A. Dobisz ◽  
...  

Author(s):  
C. R. K. Marrian ◽  
F. K. Perkins ◽  
S. L. Brandow ◽  
T. S. Koloski ◽  
E. A. Dobisz ◽  
...  

1991 ◽  
Vol 236 ◽  
Author(s):  
Masakazu Baba ◽  
Shinji Matsui

AbstractGaAs etching with Cl2 gas is studied with a scanning tunneling microscope (STM). Both Cl2 gas and tunnel electron assist etching occur under the tip during scanning and the etching profile is found to depend on the gas flow time. GaAs and Si patterns with nanometer dimensions are fabricated by STM assist etching with a very low voltage (-IV). Also atomic layer etching of GaAs is demonstrated by STM assist-etching using a Cl adlayer.


1993 ◽  
Vol 48 (3) ◽  
pp. 315-320 ◽  
Author(s):  
J. Méndez ◽  
J. Gómez-Herrero ◽  
Huang Wen Hao ◽  
A.M. Baró

Sign in / Sign up

Export Citation Format

Share Document