GaAs and Si Assisted Etching using a Scanning Tunneling Microscope

1991 ◽  
Vol 236 ◽  
Author(s):  
Masakazu Baba ◽  
Shinji Matsui

AbstractGaAs etching with Cl2 gas is studied with a scanning tunneling microscope (STM). Both Cl2 gas and tunnel electron assist etching occur under the tip during scanning and the etching profile is found to depend on the gas flow time. GaAs and Si patterns with nanometer dimensions are fabricated by STM assist etching with a very low voltage (-IV). Also atomic layer etching of GaAs is demonstrated by STM assist-etching using a Cl adlayer.

1994 ◽  
Vol 64 (3) ◽  
pp. 390-392 ◽  
Author(s):  
C. R. K. Marrian ◽  
F. K. Perkins ◽  
S. L. Brandow ◽  
T. S. Koloski ◽  
E. A. Dobisz ◽  
...  

2017 ◽  
Vol 8 ◽  
pp. 2389-2395 ◽  
Author(s):  
Sumit Tewari ◽  
Koen M Bastiaans ◽  
Milan P Allan ◽  
Jan M van Ruitenbeek

Scanning tunneling microscopes (STM) are used extensively for studying and manipulating matter at the atomic scale. In spite of the critical role of the STM tip, procedures for controlling the atomic-scale shape of STM tips have not been rigorously justified. Here, we present a method for preparing tips in situ while ensuring the crystalline structure and a reproducibly prepared tip structure up to the second atomic layer. We demonstrate a controlled evolution of such tips starting from undefined tip shapes.


2011 ◽  
Vol 82 (12) ◽  
pp. 123704 ◽  
Author(s):  
James F. Mack ◽  
Philip B. Van Stockum ◽  
Hitoshi Iwadate ◽  
Fritz B. Prinz

Author(s):  
C. R. K. Marrian ◽  
F. K. Perkins ◽  
S. L. Brandow ◽  
T. S. Koloski ◽  
E. A. Dobisz ◽  
...  

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