GaAs and Si Assisted Etching using a Scanning Tunneling Microscope
Keyword(s):
Gas Flow
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AbstractGaAs etching with Cl2 gas is studied with a scanning tunneling microscope (STM). Both Cl2 gas and tunnel electron assist etching occur under the tip during scanning and the etching profile is found to depend on the gas flow time. GaAs and Si patterns with nanometer dimensions are fabricated by STM assist etching with a very low voltage (-IV). Also atomic layer etching of GaAs is demonstrated by STM assist-etching using a Cl adlayer.
1999 ◽
Vol 38
(Part 2, No. 1A/B)
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pp. L1-L3
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2017 ◽
Vol 8
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pp. 2389-2395
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2011 ◽
Vol 82
(12)
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pp. 123704
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2008 ◽
Vol 79
(11)
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pp. 113707
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