A high-stability scanning tunneling microscope achieved by an isolated tiny scanner with low voltage imaging capability

2013 ◽  
Vol 84 (11) ◽  
pp. 113703 ◽  
1994 ◽  
Vol 64 (3) ◽  
pp. 390-392 ◽  
Author(s):  
C. R. K. Marrian ◽  
F. K. Perkins ◽  
S. L. Brandow ◽  
T. S. Koloski ◽  
E. A. Dobisz ◽  
...  

1985 ◽  
Vol 56 (8) ◽  
pp. 1573-1576 ◽  
Author(s):  
G. F. A. van de Walle ◽  
J. W. Gerritsen ◽  
H. van Kempen ◽  
P. Wyder

2014 ◽  
Vol 85 (12) ◽  
pp. 125103 ◽  
Author(s):  
Zhigang Xia ◽  
Jihao Wang ◽  
Yubin Hou ◽  
Qingyou Lu

1988 ◽  
Vol 59 (7) ◽  
pp. 1035-1038 ◽  
Author(s):  
F. Besenbacher ◽  
E. Laegsgaard ◽  
K. Mortensen ◽  
U. Nielsen ◽  
I. Stensgaard

1987 ◽  
Vol 58 (8) ◽  
pp. 1343-1348 ◽  
Author(s):  
B. L. Blackford ◽  
D. C. Dahn ◽  
M. H. Jericho

Author(s):  
C. R. K. Marrian ◽  
F. K. Perkins ◽  
S. L. Brandow ◽  
T. S. Koloski ◽  
E. A. Dobisz ◽  
...  

1991 ◽  
Vol 236 ◽  
Author(s):  
Masakazu Baba ◽  
Shinji Matsui

AbstractGaAs etching with Cl2 gas is studied with a scanning tunneling microscope (STM). Both Cl2 gas and tunnel electron assist etching occur under the tip during scanning and the etching profile is found to depend on the gas flow time. GaAs and Si patterns with nanometer dimensions are fabricated by STM assist etching with a very low voltage (-IV). Also atomic layer etching of GaAs is demonstrated by STM assist-etching using a Cl adlayer.


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