Vacancy formation during oxidation of silicon crystal surface

2008 ◽  
Vol 93 (10) ◽  
pp. 101904 ◽  
Author(s):  
M. Suezawa ◽  
Y. Yamamoto ◽  
M. Suemitsu ◽  
N. Usami ◽  
I. Yonenaga
Keyword(s):  
Crystal Surface ◽  
Silicon Crystal ◽  
Vacancy Formation

Functionalization of Silicon Crystal Surface by Energetic Cluster Ion Bombardment

2012 ◽  
Vol 12 (12) ◽  
pp. 9136-9141
Author(s):  
Vasily Lavrentiev ◽  
Jiri Vacik ◽  
Alexandr Dejneka ◽  
Lubomir Jastrabik ◽  
Vladimir Vorlicek ◽  
...  
Keyword(s):  
Crystal Surface ◽  
Silicon Crystal ◽  
Ion Bombardment ◽  
Cluster Ion

Diamond Growth from Sputtered Atomic Carbon and Hydrogen Gas

1992 ◽  
Vol 242 ◽  
Author(s):  
Michael A. Kelly ◽  
Sanjiv Kapoor ◽  
Darin S. Olson ◽  
Stig B. Hagstrom
Keyword(s):  
Crystal Surface ◽  
Silicon Crystal ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
The Novel ◽  
Graphite Target ◽  
Rotating Platform ◽  
Sem Images ◽  
Diamond Crystals ◽  
Effective Growth

ABSTRACTDiamond thin films were grown on a scratched silicon crystal surface by a novel CVD technique. The heated substrate, mounted on a rotating platform, was exposed to a bombardment of sputtered carbon atoms, from a graphite target in a helium plasma, and subsequently bombarded by atomic hydrogen generated by a hot tungsten filament. The resulting diamond films were characterized by Raman spectroscopy and SEM. The SEM images indicate highly faceted diamond crystals and the Raman spectra show a single narrow peak characteristic of pure diamond with no graphitic component. The effective growth rate is about 0.5 microns per hour of exposure time. The novel sequential CVD reactor is described and possible growth mechanisms are discussed.

Research on Elastic-Plastic Transition and Hardening Effect for Monocrystalline Silicon Surfaces

2014 ◽  
Vol 1027 ◽  
pp. 101-106
Author(s):  
Xiao Guang Guo ◽  
Chang Heng Zhai ◽  
Zi Yuan Liu ◽  
Liang Zhang ◽  
Zhu Ji Jin ◽  
...  
Keyword(s):  
High Frequency ◽  
Crystal Surface ◽  
Silicon Crystal ◽  
Silicon Surfaces ◽  
Precision Machining ◽  
Displacement Curve ◽  
Elastic Plastic ◽  
Ultra Precision ◽  
Load Displacement ◽  
Dynamics Method

Based on molecular dynamics method, a nanoindentation simulation of the silicon crystal is built and the load-displacement curve is drawn. According to the load-displacement curve, the elastic-plastic transition of silicon crystal is analyzed. The results show that the critical point in the elastic-plastic transition is between 15 and 20 angstroms. In addition, different crystal planes of silicon crystal are loaded for five cycles respectively; the nanohardness is calculated and the nanohardness curve is obtained. The results show that after the first plastic deformation of the silicon crystal surface is occurred, the surface will have a higher hardness and a higher elasticity. Therefore, in the ultra precision machining, in order to reduce the occurrence of damage, the depth of the processing should be controlled in the range of elasticity. Moreover, the method of small quantities in high frequency can increase mechanical properties on the surface.

Effect of Hydrogen on the Mechanical Properties of Silicon Crystal Surface

2013 ◽  
Author(s):  
Hayato Izumi ◽  
Ryota Mukaiyama ◽  
Nobuyuki Shishido ◽  
Shoji Kamiya
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Crystal Surface ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Displacement Curve ◽  
Hydrogen Atoms ◽  
Crystal Silicon ◽  
Boron Doped ◽  
Energy Dissipated

This paper reports the mechanical properties of single crystal silicon surface changed with hydrogen atoms trapped by underwater boiling treatment. Nanoindentaion test using a Berkovich indenter in six different indentation loads ranging from 100 μN to 1000 μN was conducted to obtain the load-displacement curve. The energy dissipated in plastic deformation, i.e. plasticity energy, during indentation on silicon wafers with different carrier concentration (undoped, lightly and heavily boron doped silicon) were compared. After boiling treatment, increment in the plasticity energy was observed on silicon containing boron. This result suggests that hydrogen atoms trapped inside silicon enhanced dislocation mobility leading to larger plastic deformation.

Point defects generated by oxidation of silicon crystal surface

2009 ◽  
Vol 404 (23-24) ◽  
pp. 5156-5158 ◽  
Author(s):  
M. Suezawa ◽  
Y. Yamamoto ◽  
M. Suemitsu ◽  
I. Yonenaga
Keyword(s):  
Point Defects ◽  
Crystal Surface ◽  
Silicon Crystal

Formation of Self-Assembled Organic Ultrathin film by Chemisorption on Silicon Crystal Surface

1996 ◽  
Vol 35 (Part 1, No. 6A) ◽  
pp. 3542-3546 ◽  
Author(s):  
Takayuki Takahagi ◽  
Yoshikatu Nagasawa ◽  
Akira Ishitani
Keyword(s):  
Crystal Surface ◽  
Silicon Crystal ◽  
Ultrathin Film ◽  
Self Assembled

Preparation of monolayer of poly(γ-benzyl-L-glutamate) by chemical reaction on a silicon crystal surface

1992 ◽  
pp. 1626-1628 ◽  
Author(s):  
Shigeru Machida ◽  
Kenji Sano ◽  
Hideyuki Sasaki ◽  
Masahiko Yoshiki ◽  
Yasushi Mori
Keyword(s):  
Chemical Reaction ◽  
Crystal Surface ◽  
Silicon Crystal
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