Diamond Growth from Sputtered Atomic Carbon and Hydrogen Gas

1992 ◽  
Vol 242 ◽  
Author(s):  
Michael A. Kelly ◽  
Sanjiv Kapoor ◽  
Darin S. Olson ◽  
Stig B. Hagstrom
Keyword(s):  
Crystal Surface ◽  
Silicon Crystal ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
The Novel ◽  
Graphite Target ◽  
Rotating Platform ◽  
Sem Images ◽  
Diamond Crystals ◽  
Effective Growth

ABSTRACTDiamond thin films were grown on a scratched silicon crystal surface by a novel CVD technique. The heated substrate, mounted on a rotating platform, was exposed to a bombardment of sputtered carbon atoms, from a graphite target in a helium plasma, and subsequently bombarded by atomic hydrogen generated by a hot tungsten filament. The resulting diamond films were characterized by Raman spectroscopy and SEM. The SEM images indicate highly faceted diamond crystals and the Raman spectra show a single narrow peak characteristic of pure diamond with no graphitic component. The effective growth rate is about 0.5 microns per hour of exposure time. The novel sequential CVD reactor is described and possible growth mechanisms are discussed.

Growth of Diamond from Sputtered Atomic Carbon and Atomic Hydrogen

1992 ◽  
Vol 270 ◽  
Author(s):  
Darin S. Olson ◽  
Michael A. Kelly ◽  
Sanjiv Kapoor ◽  
Stig B. Hagstrom
Keyword(s):  
Growth Rate ◽  
Atomic Hydrogen ◽  
Surface Reaction ◽  
Crystal Surface ◽  
Silicon Crystal ◽  
Diamond Films ◽  
Diamond Growth ◽  
Graphite Target ◽  
Hydrogen Flux ◽  
Deposited Film

ABSTRACTDiamond thin films were grown on a scratched silicon crystal surface by a novel CVD technique. The substrate was exposed to a bombardment of sputtered carbon atoms from a graphite target in a helium DC glow discharge, and subsequently exposed to atomic hydrogen generated by a hot tungsten filament. The resulting diamond films were characterized by Raman spectroscopy and SEM. Deposited film quality, and growth rate are presented as a function of carbon flux, and atomic hydrogen flux. The observed increase in growth rate with atomic hydrogen indicates that a surface reaction mechanism may be responsible for growth. The saturation of the utilization of carbon confirms that the diamond growth is probably a surface reaction. Based on this work we propose that the growth of diamond films in the sequential CVD reactor is most likely governed by surface reactions, and that the necessity of gas phase precursors can be precluded.

Twinning and faceting in early stages of diamond growth by chemical vapor deposition

1992 ◽  
Vol 7 (11) ◽  
pp. 3001-3009 ◽  
Author(s):  
John C. Angus ◽  
Mahendra Sunkara ◽  
Scott R. Sahaida ◽  
Jeffrey T. Glass
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Crystal Surface ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Average Lifetime ◽  
Surface Sites ◽  
Diamond Crystals ◽  
Initial Stage

Flat, hexagonally shaped diamond platelets were observed during the initial stage of microwave plasma assisted deposition of diamond. The platelets are approximately 2.5 μm in linear dimension and are oriented with their large six-sided faces parallel to the silicon substrate. A re-entrant groove, running parallel to the large six-sided face, is present in the small side faces of the platelets. Larger diamond crystals, with a fully developed three-dimensional morphology, all have re-entrant grooves in other directions. The observations support the hypothesis that the growth rate of {111} faceted diamond crystals is greatly enhanced by the presence of microtwins (multiple stacking errors), which give rise to re-entrant corners where they intersect the crystal surface. Fully developed {111} faceting and a strong influence of re-entrant corners is expected when the average lifetime of a carbon atom bonded once to the surface is much less than the average time between addition of adatoms at adjacent surface sites.

scholarly journals Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture

Processes ◽  
2020 ◽  
Vol 8 (6) ◽  
pp. 666 ◽  
Author(s):  
Nikolay Ivanovich Polushin ◽  
Alexander Ivanovich Laptev ◽  
Boris Vladimirovich Spitsyn ◽  
Alexander Evgenievich Alexenko ◽  
Alexander Mihailovich Polyansky ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
Structural Defects ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Synthesis Conditions ◽  
Surface Etching ◽  
Boron Doped

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.

Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures

1989 ◽  
Vol 4 (2) ◽  
pp. 373-384 ◽  
Author(s):  
B. E. Williams ◽  
J. T. Glass
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Methane Concentration ◽  
Microwave Plasma ◽  
Defect Density ◽  
Diamond Films ◽  
Hydrogen Gas ◽  
Phase Identification ◽  
Diamond Crystals ◽  
Thin Carbon

Thin carbon films grown from a low pressure methane-hydrogen gas mixture by microwave plasma enhanced CVD have been examined by Auger electron spectroscopy, secondary ion mass spectrometry, electron and x-ray diffraction, electron energy loss spectroscopy, and electron microscopy. They were determined to be similar to natural diamond in terms of composition, structure, and bonding. The surface morphology of the diamond films was a function of position on the sample surface and the methane concentration in the feedgas. Well-faceted diamond crystals were observed near the center of the sample whereas a less faceted, cauliflower texture was observed near the edge of the sample, presumably due to variations in temperature across the surface of the sample. Regarding methane concentration effects, threefold {111} faceted diamond crystals were predominant on a film grown at 0.3% CH4 in H2 while fourfold {100} facets were observed on films grown in 1.0% and 2.0% CH4 in H2. Transmission electron microscopy of the diamond films has shown that the majority of diamond crystals have a very high defect density comprised of {111} twins, {111} stacking faults, and dislocations. In addition, cross-sectional TEM has revealed a 50 Å epitaxial layer of β3–SiC at the diamond-silicon interface of a film grown with 0.3% CH4 in H2 while no such layer was observed on a diamond film grown in 2.0% CH4 in H2.

Vacancy formation during oxidation of silicon crystal surface

2008 ◽  
Vol 93 (10) ◽  
pp. 101904 ◽  
Author(s):  
M. Suezawa ◽  
Y. Yamamoto ◽  
M. Suemitsu ◽  
N. Usami ◽  
I. Yonenaga
Keyword(s):  
Crystal Surface ◽  
Silicon Crystal ◽  
Vacancy Formation

Comparison Between Chemical and Plasmatic Treatment of Seeding Layer for Patterned Diamond Growth

2009 ◽  
Vol 1203 ◽  
Author(s):  
Alexander Kromka ◽  
Oleg Babchenko ◽  
Bohuslav Rezek ◽  
Karel Hruska ◽  
Adam Purkrt ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Substrate Surface ◽  
Diamond Growth ◽  
Seeding Layer ◽  
Lithographic Patterning ◽  
Si Substrates ◽  
Diamond Crystals ◽  
Minimal Damage ◽  
Wet Chemical ◽  
Lift Off

AbstractWe employ UV photolithographic and electron beam lithographic patterning of diamond seeding layer on SiO2/Si substrates for the selective growth of micrometer and sub-micrometer diamond patterns. Using bottom-up strategy, thin diamond channels (470 nm in width) are directly grown. Differences between wet chemical and plasma treatment on the patterned diamond growth are studied. We find that the density of parasitic diamond crystals (outside predefined patterns) is lowered for gas mixture CF4/O2 plasma than for rich O2 plasma. After CF4/O2 plasma treatment, the density of parasitic crystals is 106 cm-2 which is comparable to the wet chemical treatment. Introducing sandwich-like structure, i.e. photoresist-seeding layer-photoresist, and its treatment (lift-off and CF4/O2 plasma) further reduces the density of parasitic crystals down to 105 cm-2. The advantage of this novel treatment is short processing time, simplicity, and minimal damage of the substrate surface.

Observations of low-frequency oscillations during relativistic-electron-beam-plasma interactions

1991 ◽  
Vol 46 (2) ◽  
pp. 237-246
Author(s):  
A. S. Paithankar ◽  
G. P. Gupta
Keyword(s):  
Electron Beam ◽  
Relativistic Electron ◽  
Relativistic Electron Beam ◽  
Low Frequency ◽  
Hydrogen Gas ◽  
The Novel ◽  
Low Frequency Oscillations ◽  
Wave Forms ◽  
Beam Parameters ◽  
Pressure Regime

During propagation of a relativistic electron beam in hydrogen gas at sub-torr pressures using a foil-less diode, low-frequency oscillations in the megahertz range are observed in the net current wave forms, and continue even after passage of the beam. The novel feature of the experiment is that both beam generation and propagation take place in the same low-pressure regime, and hence the beam parameters are functions of gas pressures. Analysis of the experimental results shows that the low-frequency oscillations result from the resistive-hose instability.

Effects of phosphorus doping via Mn3P2 on diamond growth along the (100) surfaces

CrystEngComm ◽  
2019 ◽  
Vol 21 (44) ◽  
pp. 6810-6818 ◽  
Author(s):  
Kunpeng Yu ◽  
Shangsheng Li ◽  
Qun Yang ◽  
Kunqiu Leng ◽  
Meihua Hu ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Gradient Method ◽  
Diamond Growth ◽  
Phosphorus Doping ◽  
Diamond Crystals ◽  
Temperature Gradient Method

In this study, n-type diamond crystals were synthesized via the temperature gradient method at 5.6 GPa and 1230–1245 °C by adding a Mn3P2 dopant and FeNi catalyst.

Frictional anisotropy in nonmetallic crystals

1966 ◽  
Vol 295 (1442) ◽  
pp. 244-258 ◽  
Keyword(s):  
Magnesium Oxide ◽  
Plastic Flow ◽  
Lithium Fluoride ◽  
Crystal Surface ◽  
Shear Stresses ◽  
Depth Of Penetration ◽  
Diamond Crystals ◽  
Deformation And Fracture ◽  
Fluoride Crystals ◽  
The Difference

A study is made of the effect of the crystallographic direction of sliding on the friction of the (001) surfaces of diamond, magnesium oxide and lithium fluoride crystals. The friction shows marked anisotropy and with all the crystals it is greatest in the <100> directions and least in the <110> directions. The degree and magnitude of the anisotropy is dependent upon the shape of the slider and the ease with which it penetrates the crystal surface. Sharp sliders increase the degree of brittle failure and this leads to deeper penetration and to the removal of more material during sliding. With these crystals the depth of penetration is greater in the <100> directions then in the <110> and it is this which is primarily responsible for the frictional anisotropy. An explanation of frictional anisotropy is proposed which is based on the difference in the magnitude and distribution of resolved shear stresses during sliding in various crystallographic directions. This analysis is used to predict the effect of crystallographic orientation on the frictional behaviour when a (110) surface of magnesium oxide replaces the cube (001) surface used in the other experiments. Mechanisms of deformation and fracture associated with the friction are described. Brittle behaviour predominates in diamond crystals and only cleavage cracks are observed. Appreciable plastic flow occurs in both magnesium oxide and lithium fluoride crystals. With these crystals the initial plastic deformation leads to dislocation interactions which result in cracking and fracture along the {110} planes. These interact with cleavage cracks on {100} planes which are produced by tensile stress and cause surface fragmentation and wear of the crystal. Plastic flow is the only mode of deformation observed on (001) lithium fluoride surfaces when a very smooth blunt slider is used. This causes ‘pile-up’ of material along <110> directions (as previously observed in copper crystals) but it does not produce any appreciable anisotropy in the friction.

Apparatus for low-temperature growth of diamond-containing films

1989 ◽  
Vol 4 (5) ◽  
pp. 1243-1245 ◽  
Author(s):  
P. H. Fang ◽  
J. H. Kinnier
Keyword(s):  
Substrate Temperature ◽  
Electronic Devices ◽  
Silicon Crystal ◽  
Discharge Voltage ◽  
Diamond Growth ◽  
Diamond Like Carbon ◽  
Hydrocarbon Gases ◽  
Temperature Growth ◽  
Hot Filament ◽  
Deposited Film

In current processes of diamond growth, the substrate temperature is in general around 600–900 °C. In the case of diamond-like carbon, the substrate temperature is lower, around 25–200 °C. There are many superior properties of diamond compared with diamond-like carbon; however, the high temperature requirement to grow diamond precludes many technologically important substrate materials such as zinc sulfide for an infrared window or electronic devices on which protective diamond layers are to be coated. The present approach is a hot filament DC glow discharge of hydrocarbon gases. A graphite hot filament cathode is inserted in a discharge cylinder tube anode. The discharge voltage is in the range of 50 to 250 volts at a methane gas pressure of about 100 microns. A negative biased voltage of 100 volts is applied between the cathode and the substrate. A magnetic field of 1 kG is applied near the cathode-anode assembly. At a substrate temperature of 200–400 °C, the deposited film on silicon crystal is confirmed by an electron diffraction pattern to consist of microcrystalline diamond.

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