Effect of Hydrogen on the Mechanical Properties of Silicon Crystal Surface

2013 ◽  
Author(s):  
Hayato Izumi ◽  
Ryota Mukaiyama ◽  
Nobuyuki Shishido ◽  
Shoji Kamiya
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Crystal Surface ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Displacement Curve ◽  
Hydrogen Atoms ◽  
Crystal Silicon ◽  
Boron Doped ◽  
Energy Dissipated

This paper reports the mechanical properties of single crystal silicon surface changed with hydrogen atoms trapped by underwater boiling treatment. Nanoindentaion test using a Berkovich indenter in six different indentation loads ranging from 100 μN to 1000 μN was conducted to obtain the load-displacement curve. The energy dissipated in plastic deformation, i.e. plasticity energy, during indentation on silicon wafers with different carrier concentration (undoped, lightly and heavily boron doped silicon) were compared. After boiling treatment, increment in the plasticity energy was observed on silicon containing boron. This result suggests that hydrogen atoms trapped inside silicon enhanced dislocation mobility leading to larger plastic deformation.

Nanoindentation Characterization of Single-Crystal Silicon With Oxide Film

2021 ◽  
Author(s):  
Lianmin Yin ◽  
Yifan Dai ◽  
Hao Hu
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Oxide Film ◽  
Single Crystal ◽  
Deformation Zone ◽  
Single Crystal Silicon ◽  
Plastic Deformation Zone ◽  
Crystal Silicon ◽  
Ultra Precision

Abstract In order to obtain ultra-smooth surfaces of single-crystal silicon in ultra-precision machining, an accurate study of the deformation mechanism, mechanical properties, and the effect of oxide film under load is required. The mechanical properties of single-crystal silicon and the phase transition after nanoindentation experiments are investigated by nanoindentation and Raman spectroscopy, respectively. It is found that pop-in events appear in the theoretical elastic domain of single-crystal silicon due to the presence of oxide films, which directly leads the single crystal silicon from the elastic deformation zone into the plastic deformation zone. In addition, the mechanical properties of single-crystal silicon are more accurately measured after it has entered the full plastic deformation.

Research on the Relationship between Indenter Tip Radius and Hardness with a Self-Designed Nanohardness Test Device

2008 ◽  
Vol 392-394 ◽  
pp. 267-270
Author(s):  
Qiang Liu ◽  
Ying Xue Yao ◽  
L. Zhou
Keyword(s):  
Single Crystal ◽  
Indentation Depth ◽  
Single Crystal Silicon ◽  
Indentation Hardness ◽  
Displacement Curve ◽  
Test Device ◽  
Crystal Silicon ◽  
Load Displacement ◽  
Depth Sensitivity ◽  
Tip Radius

Nanoindentation device has the ability to make the load-displacement measurement with sub-nanometer indentation depth sensitivity, and the nanohardness of the material can be achieved by the load-displacement curve. Aiming at the influence law of indenter tip radius to indentation hardness, testing on the hardness of single-crystal silicon were carried out with the new self-designed nanohardness test device based on nanoindentation technique. Two kinds of Berkovich indenter with radius 40nm and 60nm separately were used in this experiment. According to the load-depth curve, the hardness of single-crystal silicon was achieved by Oliver-Pharr method. Experimental results are presented which show that indenter tip radius do influence the hardness, the hardness value increases and the indentation size effect (ISE) becomes obvious with the increasing of tip radius under same indentation depth.

Influences of Silicon Crystal Anisotropy in Nano-Machining Processes Using AFM

2013 ◽  
Author(s):  
Yachao Wang ◽  
Jing Shi ◽  
Xinnan Wang
Keyword(s):  
Normal Load ◽  
Silicon Crystal ◽  
Single Crystal Silicon ◽  
Transformation Mechanism ◽  
Machining Processes ◽  
Crystal Silicon ◽  
Normal Loading ◽  
Crystal Direction ◽  
Four Levels ◽  
Cutting Mechanisms

Atomic force microscope (AFM) machining has the potential to become an essential technology for manufacturing micro/nano-scale devices. In literature, this technique has been successfully employed to machine various types of materials, including semiconductor materials and metals. However, the effect of material anisotropy in terms of crystal direction is rarely considered in the existing studies. In this paper, we conduct nano-scratching experiments on the (1 0 0) plane of single crystal silicon surface with a diamond tip in an AFM machine. Three levels of crystal direction of nano-scratching are considered. Four levels of normal loading are applied. Machining performances are mainly evaluated by the groove morphology. Also, the wear coefficients and scratch ratio are calculated to the anti-wear performance. Based on the pile up volume and cutting volume respectively, the presence of the ploughing and cutting mechanisms is determined. The experiment results indicate that the applied normal load significantly affect the groove depth and debris morphology. The scratching direction has a pronounced effect on the friction coefficient and the calculated scratching hardness. By observing the debris morphology and cracks formation, the dependence of ductile to brittle transformation mechanism of silicon machining on the crystal direction is also discussed.

Microheater Made of Heavily Boron Doped Single Crystal Silicon Beam

1992 ◽  
Vol 276 ◽  
Author(s):  
Mitsuteru Kimura ◽  
Kazuhiro Komatsuzaki
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Bridge Structure ◽  
Quick Response ◽  
Crystal Silicon ◽  
Etching Technique ◽  
Small Power ◽  
Boron Doped ◽  
Type Layer ◽  
P Type

ABSTRACTMicroheater made of heavily Boron doped single crystal Si beam covered with SiO2 film, 1000×300×3 μm, is fabricated on the n type Si substrate by the anisotropic etching technique. As this microheater has an air bridge structure of low resistivity semiconductor material with positive but small temperature coefficient of resistance, a broad heating area up to 800 °C is easily obtained and it has quick response with the thermal time constant t of about 4 ms and has small power consumption. Since this heating area is made of p type layer in the n type substrate,this area can be electrically isolated from the substrate because of the formation of p-n junction.

Micro-Scale Cantilever Testing of Linear Elastic and Elastic-Plastic Materials

2012 ◽  
Vol 525-526 ◽  
pp. 57-60 ◽  
Author(s):  
J.E. Darnbrough ◽  
S. Mahalingam ◽  
Peter E.J. Flewitt
Keyword(s):  
Mechanical Properties ◽  
Single Crystal Silicon ◽  
Ion Milling ◽  
Crystal Silicon ◽  
Micro Scale ◽  
Elastic Plastic ◽  
Linear Elastic ◽  
Dual Beam ◽  
The Individual ◽  
Elastic Plastic Materials

t is increasingly a requirement to be able to determine the mechanical properties of materials: (i) at the micro-scale, (ii) that are in the form of surface coatings and (iii) that have nanoscale microstructures. As a consequence micro-scale testing is an important tool that has been developed to aid the evaluation of the mechanical properties of such materials. In this work cantilever beam specimens (typically 2μm by 2μm by 10μm in size) have been prepared by gallium ion milling and then deformed in-situ within a FEI Helios Dual Beam workstation. The latter is achieved using a force probe with a geometry suitable for loading the micro-scale test specimens. Thus force and displacement can be measured together with observing the deformation and fracture of the individual specimens. This paper considers the evaluation of the mechanical properties in particular elastic modulus, yield strength and fracture strength of materials that result in relatively large deflections to the micro-scale cantilever beams. Two materials are considered the first is linear elastic single crystal silicon and the other elastic-plastic nanocrystalline (nc) nickel. The results are discussed with respect to the reproducibility of this method of mechanical testing and the evaluated properties are compared with those derived by alternative procedures.

Research on Elastic-Plastic Transition and Hardening Effect for Monocrystalline Silicon Surfaces

2014 ◽  
Vol 1027 ◽  
pp. 101-106
Author(s):  
Xiao Guang Guo ◽  
Chang Heng Zhai ◽  
Zi Yuan Liu ◽  
Liang Zhang ◽  
Zhu Ji Jin ◽  
...  
Keyword(s):  
High Frequency ◽  
Crystal Surface ◽  
Silicon Crystal ◽  
Silicon Surfaces ◽  
Precision Machining ◽  
Displacement Curve ◽  
Elastic Plastic ◽  
Ultra Precision ◽  
Load Displacement ◽  
Dynamics Method

Based on molecular dynamics method, a nanoindentation simulation of the silicon crystal is built and the load-displacement curve is drawn. According to the load-displacement curve, the elastic-plastic transition of silicon crystal is analyzed. The results show that the critical point in the elastic-plastic transition is between 15 and 20 angstroms. In addition, different crystal planes of silicon crystal are loaded for five cycles respectively; the nanohardness is calculated and the nanohardness curve is obtained. The results show that after the first plastic deformation of the silicon crystal surface is occurred, the surface will have a higher hardness and a higher elasticity. Therefore, in the ultra precision machining, in order to reduce the occurrence of damage, the depth of the processing should be controlled in the range of elasticity. Moreover, the method of small quantities in high frequency can increase mechanical properties on the surface.

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