Point defects generated by oxidation of silicon crystal surface

2009 ◽  
Vol 404 (23-24) ◽  
pp. 5156-5158 ◽  
Author(s):  
M. Suezawa ◽  
Y. Yamamoto ◽  
M. Suemitsu ◽  
I. Yonenaga
Keyword(s):  
Point Defects ◽  
Crystal Surface ◽  
Silicon Crystal

Vacancy formation during oxidation of silicon crystal surface

2008 ◽  
Vol 93 (10) ◽  
pp. 101904 ◽  
Author(s):  
M. Suezawa ◽  
Y. Yamamoto ◽  
M. Suemitsu ◽  
N. Usami ◽  
I. Yonenaga
Keyword(s):  
Crystal Surface ◽  
Silicon Crystal ◽  
Vacancy Formation

Functionalization of Silicon Crystal Surface by Energetic Cluster Ion Bombardment

2012 ◽  
Vol 12 (12) ◽  
pp. 9136-9141
Author(s):  
Vasily Lavrentiev ◽  
Jiri Vacik ◽  
Alexandr Dejneka ◽  
Lubomir Jastrabik ◽  
Vladimir Vorlicek ◽  
...  
Keyword(s):  
Crystal Surface ◽  
Silicon Crystal ◽  
Ion Bombardment ◽  
Cluster Ion

Diamond Growth from Sputtered Atomic Carbon and Hydrogen Gas

1992 ◽  
Vol 242 ◽  
Author(s):  
Michael A. Kelly ◽  
Sanjiv Kapoor ◽  
Darin S. Olson ◽  
Stig B. Hagstrom
Keyword(s):  
Crystal Surface ◽  
Silicon Crystal ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
The Novel ◽  
Graphite Target ◽  
Rotating Platform ◽  
Sem Images ◽  
Diamond Crystals ◽  
Effective Growth

ABSTRACTDiamond thin films were grown on a scratched silicon crystal surface by a novel CVD technique. The heated substrate, mounted on a rotating platform, was exposed to a bombardment of sputtered carbon atoms, from a graphite target in a helium plasma, and subsequently bombarded by atomic hydrogen generated by a hot tungsten filament. The resulting diamond films were characterized by Raman spectroscopy and SEM. The SEM images indicate highly faceted diamond crystals and the Raman spectra show a single narrow peak characteristic of pure diamond with no graphitic component. The effective growth rate is about 0.5 microns per hour of exposure time. The novel sequential CVD reactor is described and possible growth mechanisms are discussed.

scholarly journals Mobile Point Defects and Atomic Basis for Structural Transformations of a Crystal Surface

Science ◽  
1994 ◽  
Vol 265 (5171) ◽  
pp. 490-496 ◽  
Author(s):  
I.-S. Hwang ◽  
S. K. Theiss ◽  
J. A. Golovchenko
Keyword(s):  
Point Defects ◽  
Crystal Surface ◽  
Structural Transformations

Intrinsic Point Defects in Silicon Crystal Growth

2011 ◽  
Vol 178-179 ◽  
pp. 3-14 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Crystal Growth ◽  
Point Defects ◽  
Vacancy Concentration ◽  
Silicon Crystal ◽  
Growth Conditions ◽  
Intrinsic Point Defects ◽  
Silicon Crystals ◽  
Low Concentrations ◽  
Different Populations ◽  
Vacancy Concentrations

In dislocation-free silicon, intrinsic point defects – either vacancies or self-interstitials, depending on the growth conditions - are incorporated into a growing crystal. Their incorporated concentration is relatively low (normally, less than 1014 cm-3 - much lower than the concentration of impurities). In spite of this, they play a crucial role in the control of the structural properties of silicon materials. Modern silicon crystals are grown mostly in the vacancy mode and contain many vacancy-based agglomerates. At typical grown-in vacancy concentrations the dominant agglomerates are voids, while at lower vacancy concentrations there are different populations of joint vacancy-oxygen agglomerates (oxide plates). Larger plates – formed in a narrow range of vacancy concentration and accordingly residing in a narrow spatial band – are responsible for the formation of stacking fault rings in oxidized wafers. Using advanced crystal growth techniques, whole crystals can be grown at such low concentrations of vacancies or self-interstitials such that they can be considered as perfect.

scholarly journals Determination of Physical Properties for Point Defects during CZ Silicon Crystal Growth by High-Precision Thermal Simulations

2011 ◽  
Vol 75 (12) ◽  
pp. 657-664 ◽  
Author(s):  
Manabu Nishimoto ◽  
Kozo Nakamura ◽  
Masataka Hourai ◽  
Toshiaki Ono ◽  
Wataru Sugimura ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Physical Properties ◽  
High Precision ◽  
Point Defects ◽  
Silicon Crystal ◽  
Thermal Simulations

Behavior Of Point Defects In CZ Silicon Crystal Growth-Formation Of Polyhedral Cavities And Oxidation-Induced Stacking Fault Nuclei

1996 ◽  
Vol 442 ◽  
Author(s):  
K Tanahashi ◽  
N. Inoue ◽  
Y. Mizokawa
Keyword(s):  
Crystal Growth ◽  
Ternary System ◽  
Point Defects ◽  
Silicon Crystal ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Czochralski Silicon ◽  
Growth Formation

AbstractThe origin of oxidation–induced stacking faults (OSF) and polyhedral cavities in as–grown Czochralski silicon (CZ–Si) crystals is discussed with comparison to the behavior of previously investigated grown–in oxide precipitates. The incorporation, diffusion and reaction in the vacancy, self–interstitial and oxygen ternary system are considered to discuss the origin of grown–in defects.

MAGNETIZATION INHOMOGENEITIES GENERATED BY DEFECTS AT THE SURFACE OF A FERROMAGNET

2001 ◽  
Vol 15 (24n25) ◽  
pp. 3238-3240
Author(s):  
V. L. SOBOLEV ◽  
S. V. IVANOVA ◽  
H. L. HUANG
Keyword(s):  
Boundary Conditions ◽  
Point Defects ◽  
Magnetic Moment ◽  
Crystal Surface ◽  
Different Boundary Conditions ◽  
First Case ◽  
Inhomogeneous Magnetization

Inhomogeneous magnetization generated by point defects situated at the surface of a ferromagnet is studied. We analyzed two cases with different boundary conditions for the magnetization at the crystal surface. The first case is when the magnetic moment is rigidly fixed at the surface and the second is when the magnetic moment is determined by the interactions in the bulk of the crystal.

Concentration of point defects changed by thermal stress in growing CZ silicon crystal: effect of the growth rate

2000 ◽  
Vol 210 (1-3) ◽  
pp. 45-48 ◽  
Author(s):  
K Tanahashi ◽  
M Kikuchi ◽  
T Higashino ◽  
N Inoue ◽  
Y Mizokawa
Keyword(s):  
Growth Rate ◽  
Thermal Stress ◽  
Point Defects ◽  
Silicon Crystal

Research on Elastic-Plastic Transition and Hardening Effect for Monocrystalline Silicon Surfaces

2014 ◽  
Vol 1027 ◽  
pp. 101-106
Author(s):  
Xiao Guang Guo ◽  
Chang Heng Zhai ◽  
Zi Yuan Liu ◽  
Liang Zhang ◽  
Zhu Ji Jin ◽  
...  
Keyword(s):  
High Frequency ◽  
Crystal Surface ◽  
Silicon Crystal ◽  
Silicon Surfaces ◽  
Precision Machining ◽  
Displacement Curve ◽  
Elastic Plastic ◽  
Ultra Precision ◽  
Load Displacement ◽  
Dynamics Method

Based on molecular dynamics method, a nanoindentation simulation of the silicon crystal is built and the load-displacement curve is drawn. According to the load-displacement curve, the elastic-plastic transition of silicon crystal is analyzed. The results show that the critical point in the elastic-plastic transition is between 15 and 20 angstroms. In addition, different crystal planes of silicon crystal are loaded for five cycles respectively; the nanohardness is calculated and the nanohardness curve is obtained. The results show that after the first plastic deformation of the silicon crystal surface is occurred, the surface will have a higher hardness and a higher elasticity. Therefore, in the ultra precision machining, in order to reduce the occurrence of damage, the depth of the processing should be controlled in the range of elasticity. Moreover, the method of small quantities in high frequency can increase mechanical properties on the surface.

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