Phase transformation on and charged particle emission from a silicon crystal surface, induced by picosecond laser pulses

1981 ◽  
Vol 39 (9) ◽  
pp. 755-757 ◽  
Author(s):  
J. M. Liu ◽  
R. Yen ◽  
H. Kurz ◽  
N. Bloembergen
1989 ◽  
Vol 158 ◽  
Author(s):  
P. A. Eschbach ◽  
J. T. Dickinson ◽  
S. C. Langford ◽  
L. C. Jensen ◽  
L. R. Pederson ◽  
...  

ABSTRACTOn polished sodium trisilicate glass surfaces, a fairly distinct threshold in laser fluence is observed to commence ablative etching. An incubation or induction effect is also seen where a series of laser pulses is required to induce etching. In this paper we examine features of the charged particle emission over a broader range of fluences (in particular, at lower fluences) to identify those factors which control the onset of etching. Laser--free electron heating is proposed as a dominant mechanism.


1992 ◽  
Vol 28 (12) ◽  
pp. 1137 ◽  
Author(s):  
A. Krotkus ◽  
V. Pašiškevičius

1982 ◽  
Vol 1 (1) ◽  
pp. 37-43 ◽  
Author(s):  
V. S. Antonov ◽  
V. S. Letokhov ◽  
Yu. A. Matveyets ◽  
A. N. Shibanov

This paper presents the results of observation of sputtering of neutral molecules and ions from the crystal adenine surface induced by fourth-harmonic Nd:YAG laser radiation with a pulse duration of 30 ps. The energy fluence of laser pulses was in the region (1–3) × 10−4 J/cm2. The kinetic energy distribution of the sputtered molecules spreads up to 0.7 eV. The experiment shows that the threshold of adenine molecular ion sputtering is connected with absorbed energy density in upper layers of the crystal surface but not by laser radiation intensity.


1985 ◽  
Author(s):  
C. Cavailler ◽  
D. Gontier ◽  
J. Launspach ◽  
C. Froehly ◽  
D. Largeau ◽  
...  

1977 ◽  
Vol 15 (10) ◽  
pp. 4557-4563 ◽  
Author(s):  
J. H. Bechtel ◽  
W. Lee Smith ◽  
N. Bloembergen

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