Ballistic transport properties in spin field-effect transistors

2008 ◽  
Vol 104 (5) ◽  
pp. 053722 ◽  
Author(s):  
K. M. Jiang ◽  
Jun Yang ◽  
R. Zhang ◽  
Hongyan Wang
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Spin Field

Ballistic Transport Properties of Spin Field-Effect Transistors Built on Silicon and InAs Fins

2019 ◽  
Vol 39 (1) ◽  
pp. 155-162
Author(s):  
Dmitri S. Osintsev ◽  
Viktor Sverdlov ◽  
Alexander Makarov ◽  
Siegfried Selberherr
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Spin Field

Ballistic transport in extended Datta–Das spin field effect transistors

2011 ◽  
Vol 151 (18) ◽  
pp. 1214-1219 ◽  
Author(s):  
Yun-Chang Xiao ◽  
Rui Zhu ◽  
Wen-Ji Deng
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ballistic Transport ◽  
Spin Field

Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels

2012 ◽  
Vol 71 ◽  
pp. 25-29 ◽  
Author(s):  
D. Osintsev ◽  
V. Sverdlov ◽  
Z. Stanojević ◽  
A. Makarov ◽  
S. Selberherr
Keyword(s):  
Temperature Dependence ◽  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Spin Field

Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

2017 ◽  
Vol 5 (6) ◽  
pp. 1409-1413 ◽  
Author(s):  
E. Montes ◽  
U. Schwingenschlögl
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Silicon Nanotubes ◽  
High Transconductance ◽  
Passivated Silicon ◽  
Silicon Nanotube

Hydrogen passivated silicon nanotube field effect transistors are predicted to combine high transconductance with low sub-threshold swing.

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